# US 12,218,235 B2 · Hybrid component with silicon and wide bandgap semconductor material

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- Number: US 12,218,235 B2
- Document ID: US12218235B2
- Status: Granted
- Kind: B2
- Application number: 17/487,149
- Filed: 2021-09-28
- Published: 2022-08-25
- Granted: 2025-02-04
- Earliest claimed: 2021-02-23
- Assignees: Texas Instruments Incorporated
- Applicants: Texas Instruments Incorporated
- Inventors: Christopher Boguslaw Kocon; Henry Litzmann Edwards; Curry Bachman Taylor
- Web page: https://patentgrep.com/patent/US12218235B2

## CPC

- H10D 30/603: {having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]}
- H10D 30/65: Lateral DMOS [LDMOS] FETs
- H10D 8/60: Schottky-barrier diodes
- H10D 10/40: Vertical BJTs {(Vertical Heterojunction BJTs H10D10/821)}
- H10D 12/411: {Insulated-gate bipolar transistors [IGBT]}
- H10D 30/605: {having significant overlap between the lightly-doped extensions and the gate electrode}
- H10D 62/117: {Shapes of semiconductor bodies}
- H10D 62/151: {of IGFETs (of IGFETs having LDD or DDD structure H10D30/601; of thin film transistors H10D30/6713)}
- H10D 62/82: Heterojunctions
- H10D 64/111: {Field plates}
- H10D 8/00: Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00)
- H10D 30/0212: {using self-aligned silicidation}
- H10D 30/0221: {having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]}
- H10D 62/126: {Top-view geometrical layouts of the regions or the junctions}
- H10D 62/127: {of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs}
- H10D 62/307: {the doping variations being parallel to the channel lengths}
- H10D 62/371: {Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current}
- H10D 62/822: comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
- H10D 64/516: {the thicknesses being non-uniform}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A microelectronic device includes a hybrid component. The microelectronic device has a substrate including silicon semiconductor material. The hybrid component includes a silicon portion in the silicon, and a wide bandgap (WBG) structure on the silicon. The WBG structure includes a WBG semiconductor material having a bandgap energy greater than a bandgap energy of the silicon. The hybrid component has a first current terminal on the silicon, and a second current terminal on the WBG semiconductor structure. The microelectronic device may be formed by forming the silicon portion of the hybrid component in the silicon, and subsequently forming the WBG structure on the silicon.

## Claims

### Claim 1

A microelectronic device, comprising:
a hybrid component;
a substrate, the substrate including silicon;
a silicon portion of the hybrid component, the silicon portion being in the silicon;
a first current terminal of the hybrid component on the silicon portion of the hybrid component;
a wide bandgap (WBG) structure including a WBG semiconductor material, on the silicon portion, the WBG semiconductor material having a bandgap energy greater than a bandgap energy of the silicon; and
a second current terminal of the hybrid component on the WBG structure.

### Claim 2 (depends on 1)

The microelectronic device of claim 1, wherein the WBG semiconductor material includes a semiconductor material selected from the group consisting of a group IV semiconductor, a group III-V semiconductor, and a group II-VI semiconductor.

### Claim 3 (depends on 1)

The microelectronic device of claim 1, wherein the hybrid component is selected from the group consisting of a laterally diffused metal oxide semiconductor (LDMOS) transistor, a drain extended metal oxide semiconductor (DEMOS) transistor, a bipolar junction transistor, a junction field effect transistor, a gated bipolar, a gated unipolar semiconductor device, an insulated gate bipolar transistor (IGBT), a silicon controlled rectifier (SCR), a metal oxide semiconductor (MOS)-triggered SCR, a MOS-controlled thyristor, a gated diode, and a Schottky diode.

### Claim 4 (depends on 1)

The microelectronic device of claim 1, wherein the WBG semiconductor material extends into a recess in the silicon.

### Claim 5 (depends on 1)

The microelectronic device of claim 1, wherein the WBG semiconductor material includes a first layer adjacent to the silicon having a first lattice constant, and includes a second layer contacting the first layer having a second lattice constant, wherein the first lattice constant is between the second lattice constant and a lattice constant of the silicon.

### Claim 6 (depends on 1)

The microelectronic device of claim 1, wherein the silicon immediately below the WBG semiconductor material has an average dopant concentration greater than 1×1019 cm−3.

### Claim 7 (depends on 1)

The microelectronic device of claim 1, wherein the WBG structure includes a metal silicide layer between the WBG semiconductor material and the silicon.

### Claim 8 (depends on 1)

The microelectronic device of claim 1, wherein the WBG structure includes an interface layer between the WBG semiconductor material and the silicon, the interface layer including a material selected from the group consisting of a refractory metal, a platinum group metal, a two-dimensional material, and a rare earth metal.

### Claim 9 (depends on 1)

The microelectronic device of claim 1, wherein the WBG structure includes a contact layer on the WBG semiconductor material.

### Claim 10 (depends on 1)

The microelectronic device of claim 1, wherein the hybrid component includes a WBG sidewall contacting the WBG semiconductor material and laterally surrounding the WBG semiconductor material, the WBG sidewall including a dielectric material selected from the group consisting of silicon nitride and boron nitride.

### Claim 11 (depends on 1)

The microelectronic device of claim 1, wherein the hybrid component includes a field plate laterally surrounding the WBG semiconductor material.

### Claim 12 (depends on 1)

The microelectronic device of claim 1, wherein the WBG semiconductor material is a first WBG semiconductor material, and the WBG structure includes a second WBG semiconductor material on the first WBG semiconductor material.

### Claim 13 (depends on 1)

The microelectronic device of claim 1, wherein the WBG semiconductor material includes a vertical segment adjacent to the silicon and a lateral segment extending laterally above the silicon, wherein the second current terminal contacts the WBG structure over the lateral segment.

### Claim 14 (depends on 1)

The microelectronic device of claim 1, wherein the WBG semiconductor material has at least one lateral dimension adjacent to the silicon that is no greater than 10 times a thickness of the WBG semiconductor material or 10 times a depth of a recess in the silicon in which the WBG semiconductor material is located, whichever is greater.

### Claim 15 (depends on 1)

The microelectronic device of claim 1, wherein the hybrid component is configured to have current between the first current terminal and the second current terminal pass through a boundary between the WBG structure and the silicon.

### Claim 16

A microelectronic device, comprising:
a hybrid component;
a silicon portion of the hybrid component in silicon of a substrate of the microelectronic device;
a wide bandgap (WBG) structure on one or more portions of the silicon, the WBG structure including WBG semiconductor material having a bandgap energy greater than a bandgap energy of the silicon;
a dielectric layer on one or more other portions of the silicon;
a first current terminal of the hybrid component on the silicon portion of the hybrid component; and
a second current terminal of the hybrid component on the WBG structure.

### Claim 17 (depends on 16)

The microelectronic device of claim 16, wherein the WBG semiconductor material includes a lateral segment extending laterally above the silicon, wherein the second current terminal contacts the WBG structure over the lateral segment.

### Claim 18 (depends on 17)

The microelectronic device of claim 17, wherein the WBG semiconductor material includes a vertical segment adjacent to the silicon, connected to the lateral segment and contacting the silicon.

### Claim 19

A microelectronic device, comprising:
a hybrid component;
a silicon portion of the hybrid component in silicon of a substrate of the microelectronic device;
a wide bandgap (WBG) structure on the silicon, the WBG structure including WBG semiconductor material having a bandgap energy greater than a bandgap energy of the silicon;
a first current terminal of the hybrid component on the silicon portion of the hybrid component and contacting a first interconnect; and
a second current terminal of the hybrid component on the WBG structure and contacting a second interconnect.

### Claim 20 (depends on 19)

The microelectronic device of claim 19, wherein the WBG semiconductor material includes a vertical segment adjacent to the silicon and a lateral segment extending laterally above the silicon, wherein the second current terminal contacts the WBG structure over the lateral segment.