# US 12,218,232 B2 · Semiconductor device including compound and nitride members > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,218,232 B2 - Document ID: US12218232B2 - Status: Granted - Kind: B2 - Application number: 17/652,971 - Filed: 2022-03-01 - Published: 2023-03-02 - Granted: 2025-02-04 - Earliest claimed: 2021-08-25 - Assignees: Kabushiki Kaisha Toshiba - Applicants: Kabushiki Kaisha Toshiba - Inventors: Daimotsu Kato; Hiroshi Ono; Yosuke Kajiwara; Aya Shindome; Akira Mukai; Po-Chin Huang; Masahiko Kuraguchi; Tatsuo Shimizu - Web page: https://patentgrep.com/patent/US12218232B2 ## CPC - H10D 30/475: {having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs} - H10D 62/40: Crystalline structures - H10D 62/402: {Amorphous materials} - H10D 62/85: being Group III-V materials, e.g. GaAs - H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN} - H10D 30/0413: {of FETs having charge-trapping gate insulators, e.g. MNOS transistors} - H10D 30/47: having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT] - H10D 30/4732: {using Group III-V semiconductor material} - H10D 30/6894: {having one gate at least partly in a trench} - H10D 30/69: IGFETs having charge trapping gate insulators, e.g. MNOS transistors - H10D 30/699: {having the gate at least partly formed in a trench} - H10D 64/513: {within recesses in the substrate, e.g. trench gates, groove gates or buried gates} - H10D 64/681: {having a compositional variation, e.g. multilayered} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A semiconductor device includes first to third electrodes, a semiconductor member, first and second insulating members, a compound member, and a nitride member. The third electrode is between the first and second electrodes. The semiconductor member includes first and second semiconductor regions. The first semiconductor region includes first to fifth partial regions. The second semiconductor region includes first and second semiconductor portions. The first insulating member includes first and second insulating portions. The first semiconductor portion is between the fourth partial region and the first insulating portion. The second semiconductor portion is between the fifth partial region and the second insulating portion. The compound member includes first to third compound portions. The nitride member includes first to third nitride portions. The second insulating member includes first and second insulating regions. The first and second insulating regions are between the nitride regions and the third electrode. ## Claims ### Claim 1 A semiconductor device, comprising: a first electrode; a second electrode; a third electrode, a position of the third electrode in a first direction being between a position of the first electrode in the first direction and a position of the second electrode in the first direction, the first direction being from the first electrode toward the second electrode; a semiconductor member including a first semiconductor region and a second semiconductor region, the first semiconductor region including Alx1Ga1-x1N (0≤x1<1), the first semiconductor region including a first partial region, a second partial region, a third partial region, a fourth partial region, and a fifth partial region, a second direction from the first partial region toward the first electrode crossing the first direction, a direction from the second partial region toward the second electrode being along the second direction, a direction from the third partial region toward the third electrode being along the second direction, a position of the fourth partial region in the first direction being between a position of the first partial region in the first direction and a position of the third partial region in the first direction, a position of the fifth partial region in the first direction being between the position of the third partial region in the first direction and a position of the second partial region in the first direction, the second semiconductor region including Alx2Ga1-x2N (0