# US 12,218,230 B2 · P-GaN high-electron-mobility transistor

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- Number: US 12,218,230 B2
- Document ID: US12218230B2
- Status: Granted
- Kind: B2
- Application number: 17/868,104
- Filed: 2022-07-19
- Published: 2023-11-23
- Granted: 2025-02-04
- Earliest claimed: 2022-05-17
- Assignees: National Sun Yat-Sen University
- Applicants: National Sun Yat-Sen University
- Inventors: Ting-Chang Chang; Mao-Chou Tai; Yu-Xuan Wang; Wei-Chen Huang; Ting-Tzu Kuo; Kai-Chun Chang; Shih-Kai Lin
- Web page: https://patentgrep.com/patent/US12218230B2

## CPC

- H10D 30/4738: {having multiple donor layers}
- H10D 30/475: {having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs}
- H10D 62/343: {Gate regions of field-effect devices having PN junction gates}
- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- H10D 62/854: further characterised by the dopants
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A p-GaN high-electron-mobility transistor, includes a substrate, a channel layer stacked on the substrate, a supply layer stacked on the channel layer, a first doped layer stacked on the supply layer, a second doped layer stacked on the first doped layer, and a third doped layer stacked on the second doped layer. A doping concentration of the first doped layer and the doping concentration of the third doped layer are lower than a doping concentration of the second doped layer. A gate is located on the third doped layer, and a source and a drain are electrically connected to the channel layer and the supply layer, respectively.

## Claims

### Claim 1

A p-GaN high-electron-mobility transistor, comprising:
a substrate;
a channel layer stacked on the substrate;
a supply layer stacked on the channel layer;
a first doped layer stacked on the supply layer;
a second doped layer stacked on the first doped layer; and
a third doped layer stacked on the second doped layer, wherein a doping concentration of the first doped layer and a doping concentration of the third doped layer are lower than a doping concentration of the second doped layer, a gate is located on the third doped layer, and a source and a drain are electrically connected to the channel layer and the supply layer, respectively.

### Claim 2 (depends on 1)

The p-GaN high-electron-mobility transistor as claimed in claim 1, wherein the doping concentration of the first doped layer and the doping concentration of the third doped layer are 1×1016 to 1×1018 atom/cm3, and the doping concentration of the second doped layer is greater than 1×1018 atom/cm3.

### Claim 3 (depends on 1)

The p-GaN high-electron-mobility transistor as claimed in claim 1, wherein the first doped layer and the third doped layer are a p-GaN layer, and the second doped layer is a p+-GaN layer.

### Claim 4 (depends on 1)

The p-GaN high-electron-mobility transistor as claimed in claim 1, wherein the first doped layer, the second doped layer and the third doped layer are formed by introducing a dopant during a deposition process, with the dopant being any one of alkaline earth metals.