# US 12,218,228 B2 · Semiconductor device and manufacturing method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,218,228 B2 - Document ID: US12218228B2 - Status: Granted - Kind: B2 - Application number: 17/409,809 - Filed: 2021-08-24 - Published: 2021-12-09 - Granted: 2025-02-04 - Earliest claimed: 2019-09-11 - Assignees: Fuji Electric Co., Ltd. - Applicants: Fuji Electric Co., Ltd. - Inventors: Koh Yoshikawa; Masayuki Momose; Toshiyuki Matsui - Web page: https://patentgrep.com/patent/US12218228B2 ## CPC - H10D 12/461: {having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions} - H10D 12/481: {having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs} - H10D 8/422: {PN diodes having the PN junctions in mesas} - H10D 12/038: {having a recessed gate, e.g. trench-gate IGBTs} - H10D 30/665: {having edge termination structures} - H10D 62/106: {having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions} - H10D 62/112: {for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers} - H10D 62/127: {of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs} - H10D 62/53: the imperfections being within the semiconductor body - H10D 64/117: {Recessed field plates, e.g. trench field plates or buried field plates} - H10D 64/513: {within recesses in the substrate, e.g. trench gates, groove gates or buried gates} - H10D 64/519: {characterised by their top-view geometrical layouts} - H10P 30/204: {into Group IV semiconductors} - H10P 30/208: {of electrically inactive species} - H10D 62/142: {Anode regions of thyristors or collector regions of gated bipolar-mode devices} - H10D 62/60: Impurity distributions or concentrations - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract Provided is a semiconductor device, including: a semiconductor substrate including a bulk donor; an active portion provided on the semiconductor substrate; and an edge termination structure portion provided between the active portion and an end side of the semiconductor substrate on a upper surface of the semiconductor substrate; wherein the active portion includes hydrogen, and has a first high concentration region with a higher donor concentration than a bulk donor concentration; and the edge termination structure portion, which is provided in a range that is wider than the first high concentration region in a depth direction of the semiconductor substrate, includes hydrogen, and has a second high concentration region with a higher donor concentration than the bulk donor concentration. ## Claims ### Claim 1 A semiconductor device, comprising: a semiconductor substrate including a bulk donor; an active portion provided in the semiconductor substrate; and an edge termination structure portion provided between the active portion and an end side of the semiconductor substrate in the semiconductor substrate at an upper surface of the semiconductor substrate, wherein the active portion comprises a first high concentration region, wherein the first high concentration region includes hydrogen and has a higher donor concentration than a donor concentration of the bulk donor, wherein the semiconductor substrate comprises a buffer region provided below the first high concentration region, wherein the edge termination structure portion comprises a second high concentration region above the buffer region, wherein the second high concentration region includes hydrogen and has a higher donor concentration than the donor concentration of the bulk donor, wherein a distance between an upper surface of the buffer region and an upper surface of the second high concentration region in a depth direction is longer than a distance between the upper surface of the buffer region and an upper surface of the first high concentration region, wherein a hydrogen concentration distribution in the depth direction in the first high concentration region has a first hydrogen concentration peak, and wherein in the edge termination structure portion, a hydrogen concentration at a same depth position as the first hydrogen concentration peak is lower than a hydrogen concentration at the first hydrogen concentration peak. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, wherein the second high concentration region is in contact with the upper surface of the semiconductor substrate. ### Claim 3 (depends on 1) The semiconductor device according to claim 1, wherein the active portion has a trench portion provided on the upper surface of the semiconductor substrate; and the first hydrogen concentration peak is arranged in a region from a center in the depth direction of the semiconductor substrate to a bottom portion of the trench portion. ### Claim 4 (depends on 1) The semiconductor device according to claim 1, wherein the donor concentration at the first hydrogen concentration peak is 1.0×1013/cm3 or more but not more than 2.0×1014/cm3, wherein donors of the first high concentration region include impurities and hydrogen donors. ### Claim 5 (depends on 1) The semiconductor device according to claim 1, wherein the donor concentration at the first hydrogen concentration peak is 3 times or more, but not more than 7 times of a donor concentration in the first high concentration region that is below the first hydrogen concentration peak toward a lower surface of the semiconductor substrate. ### Claim 6 (depends on 1) The semiconductor device according to claim 1, wherein a donor concentration of the first high concentration region is the same as a donor concentration of the second high concentration region at a depth position below the first hydrogen concentration peak toward a lower surface of the semiconductor substrate. ### Claim 7 (depends on 1) The semiconductor device according to claim 1, wherein a donor concentration of the second high concentration region is higher than a donor concentration of the active portion at a depth position that is above the first hydrogen concentration peak toward the upper surface of the semiconductor substrate. ### Claim 8 (depends on 1) The semiconductor device according to claim 1, wherein the active portion has a plurality of gate trench portions provided on the upper surface of the semiconductor substrate in a predetermined interval along an array direction; and among the plurality of the gate trench portions, a distance in the array direction between a gate trench portion arranged at a farthest end in the array direction and the second high concentration region is 3 times or more of a standard deviation of the first hydrogen concentration peak. ### Claim 9 (depends on 8) The semiconductor device according to claim 8, further comprising: a well region of a P type provided between the active portion and the edge termination structure portion on the upper surface of the semiconductor substrate, and provided from the upper surface of the semiconductor substrate to a depth deeper than a lower end of the gate trench portion, wherein a boundary between the first high concentration region and the second high concentration region in the array direction is overlapped with the well region in the depth direction. ### Claim 10 (depends on 1) A manufacturing method of the semiconductor device according to claim 1, comprising: implanting hydrogen from a lower surface of the semiconductor substrate while a shielding portion is formed in a region where the active portion is provided on the lower surface of the semiconductor substrate and the lower surface of the semiconductor substrate as a region where the second high concentration region is provided is exposed; and heat treating the semiconductor substrate. ### Claim 11 (depends on 2) A manufacturing method of the semiconductor device according to claim 2, comprising: implanting hydrogen from a lower surface of the semiconductor substrate while a shielding portion is formed in a region where the active portion is provided on the lower surface of the semiconductor substrate and the lower surface of the semiconductor substrate as a region where the second high concentration region is provided is exposed; and heat treating the semiconductor substrate. ### Claim 12 (depends on 10) The manufacturing method according to claim 10, wherein in implanting hydrogen, the hydrogen implanted to a region where the second high concentration region is provided passes through the semiconductor substrate, and the hydrogen implanted to a region where the active portion is provided does not pass through the semiconductor substrate.