# US 12,218,223 B2 · Method of manufacturing semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,218,223 B2 - Document ID: US12218223B2 - Status: Granted - Kind: B2 - Application number: 17/877,251 - Filed: 2022-07-29 - Published: 2023-04-27 - Granted: 2025-02-04 - Earliest claimed: 2021-10-25 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd. - Inventors: Choongsun Kim; Shigenobu Maeda; Myoungkyu Park - Web page: https://patentgrep.com/patent/US12218223B2 ## CPC - H10D 30/024: {of fin field-effect transistors [FinFET]} - H10D 84/013: {Manufacturing their source or drain regions, e.g. silicided source or drain regions} - H10D 30/6211: {having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates} - H10D 62/151: {of IGFETs (of IGFETs having LDD or DDD structure H10D30/601; of thin film transistors H10D30/6713)} - H10D 84/017: {Manufacturing their source or drain regions, e.g. silicided source or drain regions} - H10D 84/0193: {the components including FinFETs} - H10D 84/038: {using silicon technology, e.g. SiGe} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A method of manufacturing a semiconductor device includes forming an active fin protruding from a substrate and extending in a first direction; forming sacrificial gate patterns intersecting the active fin and extend in a second direction; forming recess regions by etching the active fin on at least one side of each of the sacrificial gate patterns; forming source/drain regions on the recess regions; removing the sacrificial gate patterns to form openings; and forming a gate dielectric layer and a gate electrode such that gate structures are formed to cover the active fin in the openings. The source/drain regions are formed by an epitaxial growth process and an in-situ doping process of doping first conductivity-type impurity elements. In at least one of the source/drain regions, after the in-situ doping process is performed, counter-doping is performed using second conductivity-type impurity elements different from the first conductivity-type impurity elements to decrease carrier concentration. ## Claims ### Claim 1 A method of manufacturing a semiconductor device, the method comprising: forming an active fin to protrude from a substrate and extend in a first direction; forming a sacrificial gate pattern to intersect the active fin and extend in a second direction, the second direction perpendicular to the first direction; forming a recess region on the active fin on at least one side of the sacrificial gate pattern; forming a source/drain region on the recess region of the active fin; removing the sacrificial gate pattern to form an opening; and depositing a gate dielectric layer and a gate electrode to form a gate structure that covers the active fin in the opening, wherein the forming the source/drain region comprises forming an initial source/drain region having a first carrier concentration on the recess region of the active fin by performing an epitaxial growth process and an in-situ doping process of doping first conductivity-type impurity elements, and forming the source/drain region having a second carrier concentration less than the first carrier concentration by changing a carrier concentration of the initial source/drain region. ### Claim 2 (depends on 1) The method of claim 1, wherein the forming the source/drain region having the second carrier concentration comprises counter-doping second conductivity-type impurity elements into the initial source/drain region, the second conductivity-type impurity elements are different from the first conductivity-type impurity elements. ### Claim 3 (depends on 2) The method of claim 2, wherein a doping concentration of the second conductivity-type impurity elements is less than a doping concentration of the first conductivity-type impurity elements. ### Claim 4 (depends on 2) The method of claim 2, wherein the counter-doping comprises performing ion implantation. ### Claim 5 (depends on 2) The method of claim 2, wherein the forming the initial source/drain region comprises forming an initial source region and an initial drain region on opposite sides of the sacrificial gate pattern. ### Claim 6 (depends on 5) The method of claim 5, wherein the counter-doping is performed on at least one of the initial source region and the initial drain region. ### Claim 7 (depends on 2) The method of claim 2, wherein the first conductivity-type impurity element includes at least one of phosphorus (P), arsenic (As), bismuth (Bi), and antimony (Sb), and the second conductivity-type impurity element includes at least one of boron (B), indium (In), and gallium (Ga). ### Claim 8 (depends on 2) The method of claim 2, wherein the first conductivity-type impurity element includes at least one of boron (B), indium (In), and gallium (Ga), and the second conductivity-type impurity element includes at least one of phosphorus (P), arsenic (As), bismuth (Bi), and antimony (Sb). ### Claim 9 (depends on 1) The method of claim 1, further comprising forming gate spacer layers on opposite sides of the sacrificial gate pattern after forming the sacrificial gate pattern, wherein the forming the recess region comprises recessing the active fin using the sacrificial gate pattern and the gate spacer layers as etching masks. ### Claim 10 (depends on 1) The method of claim 1, wherein the gate dielectric layer has a thickness ranging from about 1.5 nanometers or more to about 10 nanometers or less. ### Claim 11 (depends on 1) The method of claim 1, further comprising: forming an interlayer insulating layer on the sacrificial gate pattern and the source/drain region; and forming a contact to be connected to the source/drain region through the interlayer insulating layer. ### Claim 12 A method of manufacturing a semiconductor device, the method comprising: forming an active fin to protrude from a substrate and extend in a first direction; forming a plurality of sacrificial gate patterns to intersect the active fin and extend in a second direction, the second direction perpendicular to the first direction; forming recess regions by etching the active fin on at least one side of each of the plurality of sacrificial gate patterns; forming source/drain regions on the recess regions of the active fin; removing the plurality of sacrificial gate patterns to form a plurality of openings; and forming a gate dielectric layer and a gate electrode to form a plurality of gate structures that cover the active fin in the plurality of openings, wherein the source/drain regions are formed by performing an epitaxial growth process and an in-situ doping process of doping first conductivity-type impurity elements, and in at least one of the source/drain regions, after the in-situ doping process is performed, counter-doping is performed using second conductivity-type impurity elements to decrease a carrier concentration of the at least one of the source/drain regions, the second conductivity-type impurity elements are different from the first conductivity-type impurity elements. ### Claim 13 (depends on 12) The method of claim 12, wherein the counter-doping comprises performing ion implantation to implant the second conductivity-type impurity elements at a doping concentration less than a doping concentration of the first conductivity-type impurity elements. ### Claim 14 (depends on 12) The method of claim 12, wherein a total concentration of impurity elements in the at least one of the source/drain regions is increased by the counter-doping. ### Claim 15 (depends on 14) The method of claim 14, wherein impurity elements having opposing conductivity types coexist in the at least one of the source/drain regions on which the counter-doping is performed. ### Claim 16 (depends on 12) The method of claim 12, wherein the at least one of the source/drain regions on which the counter-doping is performed is provided as a drain region of a transistor. ### Claim 17 A method of manufacturing a semiconductor device, the method comprising: forming a first active fin on a low-voltage region of a substrate, and a second active fin on a high-voltage region of the substrate; forming a first sacrificial gate pattern to intersect the first active fin, and a second sacrificial gate pattern to intersect the second active fin; forming first recess regions by etching the first active fin on opposite sides of the first sacrificial gate pattern, and second recess regions by etching the second active fin on opposite sides of the second sacrificial gate pattern; forming first source/drain regions on the first recess regions and second source/drain regions on the second recess regions by performing an epitaxial growth process and an in-situ doping process of doping first conductivity-type impurity elements; and implanting second conductivity-type impurity elements into the second source/drain regions on the high-voltage region such that a concentration of carriers in the second source/drain regions is decreased to be less than a concentration of carriers in the first source/drain regions, the second conductivity-type impurity elements are different from the first conductivity-type impurity elements. ### Claim 18 (depends on 17) The method of claim 17, wherein a doping concentration of the second conductivity-type impurity elements is less than a doping concentration of the first conductivity-type impurity elements. ### Claim 19 (depends on 17) The method of claim 17, wherein the second source/drain regions include a source region and a drain region, and a total carrier concentration of the drain region is different from a total carrier concentration of the source region. ### Claim 20 (depends on 19) The method of claim 19, wherein forming the drain region comprises: implanting the first conductivity-type impurity elements to form an initial drain region having a first carrier concentration; and counter-doping the second conductivity-type impurity elements into the initial drain region to form the drain region having a second carrier concentration that is less than the first carrier concentration.