# US 12,218,221 B2 · Semiconductor device and method

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- Number: US 12,218,221 B2
- Document ID: US12218221B2
- Status: Granted
- Kind: B2
- Application number: 17/744,061
- Filed: 2022-05-13
- Published: 2023-05-18
- Granted: 2025-02-04
- Earliest claimed: 2021-11-17
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Co., Ltd.
- Inventors: Wan-Yi Kao; Fang-Yi Liao; Shu Ling Liao; Yen-Chun Huang; Che-Hao Chang; Yung-Cheng Lu; Chi On Chui
- Web page: https://patentgrep.com/patent/US12218221B2

## CPC

- H10D 30/024: {of fin field-effect transistors [FinFET]}
- H10D 30/0243: {using dummy structures having essentially the same shapes as the semiconductor bodies, e.g. to provide stability}
- H10D 30/6211: {having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates}
- H10D 62/115: {Dielectric isolations, e.g. air gaps}
- H10D 84/0158: {the components including FinFETs}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 84/834: {comprising FinFETs}
- H10W 10/014: {using trench refilling with dielectric materials, e.g. shallow trench isolations}
- H10W 10/0148: {comprising introducing impurities in side walls or bottom walls of trenches, e.g. for forming channel stoppers}
- H10W 10/17: formed using trench refilling with dielectric materials, e.g. shallow trench isolations
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Semiconductor devices including fin-shaped isolation structures and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a fin extending from a semiconductor substrate; a shallow trench isolation (STI) region over the semiconductor substrate adjacent the fin; and a dielectric fin structure over the STI region, the dielectric fin structure extending in a direction parallel to the fin, the dielectric fin structure including a first liner layer in contact with the STI region; and a first fill material over the first liner layer, the first fill material including a seam disposed in a lower portion of the first fill material and separated from a top surface of the first fill material, a first carbon concentration in the lower portion of the first fill material being greater than a second carbon concentration in an upper portion of the first fill material.

## Claims

### Claim 1

A semiconductor device comprising:
a fin extending from a semiconductor substrate;
a shallow trench isolation (STI) region over the semiconductor substrate adjacent the fin; and
a dielectric fin structure over the STI region, the dielectric fin structure extending in a direction parallel to the fin, the dielectric fin structure comprising:
a first liner layer in contact with the STI region; and
a first fill material over the first liner layer, the first fill material comprising a seam disposed in a lower portion of the first fill material and separated from a top surface of the first fill material, wherein a first carbon concentration in the lower portion of the first fill material is greater than a second carbon concentration in an upper portion of the first fill material.

### Claim 2 (depends on 1)

The semiconductor device of claim 1, wherein the first liner layer has a third carbon concentration less than 10 at. %.

### Claim 3 (depends on 2)

The semiconductor device of claim 2, wherein the first carbon concentration and the second carbon concentration of the first fill material are greater than 12 at. %.

### Claim 4 (depends on 1)

The semiconductor device of claim 1, further comprising a second fill material over the first fill material and the first liner layer, wherein the second fill material contacts the first liner layer and the first fill material, and wherein an interface between the second fill material and the first fill material is V-shaped.

### Claim 5 (depends on 1)

The semiconductor device of claim 1, wherein the first liner layer and the first fill material comprise silicon carbon nitride, and wherein the first carbon concentration and the second carbon concentration of the first fill material are greater than a third carbon concentration of the first liner layer.

### Claim 6 (depends on 1)

The semiconductor device of claim 1, wherein the dielectric fin structure further comprises:
a second liner layer over and in contact with the first liner layer and the first fill material; and
a second fill material over the second liner layer.

### Claim 7 (depends on 6)

The semiconductor device of claim 6, wherein a third carbon concentration in the second fill material is equal to the first carbon concentration in the first fill material.

### Claim 8 (depends on 6)

The semiconductor device of claim 6, wherein a third carbon concentration in the second fill material is greater than both the first carbon concentration and the second carbon concentration in the first fill material.

### Claim 9

A semiconductor device comprising:
a channel region over a semiconductor substrate;
a shallow trench isolation (STI) region over the semiconductor substrate adjacent the channel region; and
a dielectric fin structure over the STI region, the dielectric fin structure extending in a direction parallel to the channel region, the dielectric fin structure having a top surface level with a top surface of the channel region, the dielectric fin structure comprising:
a first liner layer in contact with the STI region;
a first fill material over the first liner layer, the first fill material comprising a seam disposed in a lower portion of the first fill material and separated from a top surface of the first fill material;
a second liner layer over the first liner layer and the first fill material; and
a second fill material over the second liner layer, wherein the second fill material comprises a seam-free material.

### Claim 10 (depends on 9)

The semiconductor device of claim 9, further comprising a third fill material over the first fill material, wherein the second liner layer contacts the first liner layer and the third fill material, wherein the third fill material comprises a seam-free material.

### Claim 11 (depends on 10)

The semiconductor device of claim 10, wherein a first carbon concentration in the lower portion of the first fill material is greater than a second carbon concentration in an upper portion of the first fill material, wherein a third carbon concentration in the third fill material is equal to the second carbon concentration, and wherein a fourth carbon concentration in the second fill material is equal to the first carbon concentration.

### Claim 12 (depends on 9)

The semiconductor device of claim 9, wherein the second liner layer contacts the first liner layer and the first fill material, wherein a first carbon concentration in the lower portion of the first fill material is greater than a second carbon concentration in an upper portion of the first fill material, and wherein a third carbon concentration in the second fill material is equal to the first carbon concentration.

### Claim 13 (depends on 9)

The semiconductor device of claim 9, wherein the first liner layer and the second liner layer comprise silicon carbon nitride having a first carbon concentration less than 10 at. %, and wherein the first fill material and the second fill material comprise silicon carbon nitride having a second carbon concentration greater than 12 at. %.

### Claim 14

A method comprising:
forming a semiconductor fin extending from a substrate;
depositing an isolation material over the semiconductor fin and the substrate;
depositing a dielectric liner over the isolation material;
depositing a dielectric fill material over the dielectric liner, the dielectric fill material comprising a seam; and
performing an implantation process on the dielectric fill material, wherein the implantation process removes the seam adjacent to a top surface of the dielectric fill material.

### Claim 15 (depends on 14)

The method of claim 14, wherein performing the implantation process comprises implanting nitrogen into the dielectric fill material.

### Claim 16 (depends on 14)

The method of claim 14, wherein performing the implantation process comprises implanting argon into the dielectric fill material.

### Claim 17 (depends on 14)

The method of claim 14, further comprising:
planarizing the isolation material, the dielectric liner, and the dielectric fill material; and
etching back the dielectric fill material to form a first recess over the dielectric fill material and between opposite sidewalls of the dielectric liner, wherein the dielectric fill material is etched back before performing the implantation process.

### Claim 18 (depends on 17)

The method of claim 17, further comprising:
depositing a second dielectric fill material over the dielectric fill material; and
performing a second implantation process on the second dielectric fill material, wherein the second implantation process removes a seam from the second dielectric fill material.

### Claim 19 (depends on 18)

The method of claim 18, further comprising:
planarizing the isolation material, the dielectric liner, and the second dielectric fill material;
etching back the second dielectric fill material and the dielectric liner to form a second recess over the second dielectric fill material and between opposite sidewalls of the dielectric liner;
depositing a second dielectric liner in the first recess; and
depositing a third dielectric fill material over the second dielectric liner.

### Claim 20 (depends on 14)

The method of claim 14, further comprising:
planarizing the isolation material, the dielectric liner, and the dielectric fill material;
etching back the dielectric fill material and the dielectric liner to form a first recess over the dielectric fill material and between opposite sidewalls of the dielectric liner;
depositing a second dielectric liner in the first recess; and
depositing a second dielectric fill material over the second dielectric liner, wherein the second dielectric fill material is a seamless material.