# US 12,218,197 B2 · Gate oxide of nanostructure transistor with increased corner thickness

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 12,218,197 B2
- Document ID: US12218197B2
- Status: Granted
- Kind: B2
- Application number: 18/364,995
- Filed: 2023-08-03
- Published: 2023-11-23
- Granted: 2025-02-04
- Earliest claimed: 2020-09-29
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Co., Ltd.
- Inventors: Shu-Han Chen; Yi-Shao Li; Chun-Heng Chen; Chi On Chui
- Web page: https://patentgrep.com/patent/US12218197B2

## CPC

- H10D 62/118: {Nanostructure semiconductor bodies}
- H10D 64/017: {using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes}
- H10D 30/0191: {forming stacked channels, e.g. changing their shapes or sizes}
- H10D 30/501: {FETs having stacked nanowire, nanosheet or nanoribbon channels}
- H10D 30/62: Fin field-effect transistors [FinFET]
- H10D 30/6735: {having gates fully surrounding the channels, e.g. gate-all-around}
- H10D 64/514: {characterised by the insulating layers}
- H10D 64/516: {the thicknesses being non-uniform}
- H10D 30/6219: {characterised by the source or drain electrodes}
- H10D 30/797: {being in source or drain regions, e.g. SiGe source or drain}
- H10D 62/121: {oriented parallel to substrates}
- H10D 64/62: Electrodes ohmically coupled to a semiconductor
- H10D 64/685: {being perpendicular to the channel plane}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A device includes a semiconductor nanostructure, and an oxide layer, which includes horizontal portions on a top surface and a bottom surface of the semiconductor nanostructure, vertical portions on sidewalls of the semiconductor nanostructure, and corner portions on corners of the semiconductor nanostructure. The horizontal portions have a first thickness. The vertical portions have a second thickness. The corner portions have a third thickness. Both of the second thickness and the third thickness are greater than the first thickness. A high-k dielectric layer surrounds the oxide layer. A gate electrode surrounds the high-k dielectric layer.

## Claims

### Claim 1

A device comprising:
a plurality of semiconductor strips, wherein higher ones of the plurality of semiconductor strips overlap corresponding lower ones of the plurality of semiconductor strips, and the plurality of semiconductor strips are vertically spaced apart from each other by spaces; and
a gate stack comprising:
a plurality of oxide layers, each wrapping around one of the plurality of semiconductor strips, wherein one of the plurality of oxide layers comprises:
a first portion having a first thickness, wherein the first portion is a horizontal portion on a top surface of a corresponding one of the plurality of semiconductor strips, and wherein the first thickness is measured in a direction perpendicular to the top surface; and
a second portion having a second thickness greater than the first thickness, wherein the second thickness is measured in a diagonal direction of the one of the plurality of semiconductor strips, wherein the second portion is a corner portion at a corner of the corresponding one of the plurality of semiconductor strips, and the corner portion comprises an inner surface contacting the one of the plurality of semiconductor strips, and an outer surface opposite to, and parallel to, the inner surface, wherein the inner surface forms an obtuse angle with the top surface.

### Claim 2 (depends on 1)

The device of claim 1, wherein the diagonal direction is aligned to a straight line extending from the corner to a center of the one of the plurality of semiconductor strips.

### Claim 3 (depends on 1)

The device of claim 1, wherein the one of the plurality of oxide layers further comprises:
a third portion having a third thickness greater than the first thickness, wherein the third portion is a vertical portion on a sidewall surface of a corresponding one of the plurality of semiconductor strips, and wherein the third thickness is measured in a direction parallel to the top surface.

### Claim 4 (depends on 3)

The device of claim 3, wherein a ratio of the third thickness to the first thickness is in a range between about 1.25 and about 1.4.

### Claim 5 (depends on 1)

The device of claim 1, wherein the plurality of oxide layers comprise an oxide of a semiconductor material of the plurality of semiconductor strips.

### Claim 6 (depends on 1)

The device of claim 1, wherein a ratio of the second thickness to the first thickness is in a range between about 1.5 and about 1.7.

### Claim 7 (depends on 1)

The device of claim 1, wherein the gate stack further comprises a high-k dielectric layer encircling each of the plurality of oxide layers.

### Claim 8 (depends on 7)

The device of claim 7, wherein the gate stack further comprises a gate electrode comprising a plurality of portions, and wherein the high-k dielectric layers on the plurality of oxide layers are spaced apart from each other by the portions of the gate electrode.

### Claim 9

A device comprising:
a semiconductor nanostructure;
an oxide layer comprising:
horizontal portions on a top surface and a bottom surface of the semiconductor nanostructure, wherein the horizontal portions have a first thickness;
vertical portions on sidewalls of the semiconductor nanostructure, wherein the vertical portions have a second thickness; and
corner portions on corners of the semiconductor nanostructure, wherein the corner portions have a third thickness, and wherein both of the second thickness and the third thickness are greater than the first thickness;
a high-k dielectric layer surrounding the oxide layer; and
a gate electrode surrounding the high-k dielectric layer.

### Claim 10 (depends on 9)

The device of claim 9, wherein a ratio of the second thickness to the first thickness is greater than about 1.1.

### Claim 11 (depends on 10)

The device of claim 10, wherein the ratio of the second thickness to the first thickness is in a range between about 1.1 and about 1.4.

### Claim 12 (depends on 9)

The device of claim 9, wherein a ratio of the third thickness to the first thickness is greater than about 1.5.

### Claim 13 (depends on 9)

The device of claim 9, wherein the first thickness is measured in a first direction perpendicular to the top surface, and the second thickness is measured in a second direction parallel to the top surface.

### Claim 14 (depends on 9)

The device of claim 9, wherein the semiconductor nanostructure comprises a silicon nano-strip, and the oxide layer comprises silicon oxide.

### Claim 15 (depends on 9)

The device of claim 9 further comprising a gate spacer contacting a part of the high-k dielectric layer, wherein the gate spacer comprises a first portion and a second portion, with the first portion between and contacting the second portion and the high-k dielectric layer, and wherein the first portion comprises all elements in the second portion, and the first portion has a higher oxygen concentration than the second portion.

### Claim 16

A device comprising:
a nano-FET comprising:
a plurality of semiconductor strips, wherein higher ones of the plurality of semiconductor strips overlap corresponding lower ones of the plurality of semiconductor strips, and the plurality of semiconductor strips are vertically spaced apart from each other by spaces;
a plurality of oxide layers, each wrapping around one of the plurality of semiconductor strips, wherein one of the plurality of oxide layers comprises:
a first portion having a first thickness; and
a second portion having a second thickness, wherein a ratio of the second thickness to the first thickness is greater than about 1.5:
a high-k dielectric layer wrapping around each of the plurality of oxide layers;
a gate electrode wrapping around the high-k dielectric layer; and
a gate spacer contacting a sidewall of the high-k dielectric layer, wherein a first part of the gate spacer contacting the high-k dielectric layer is oxidized more than a second part of the gate spacer, with the second part being spaced apart from the high-k dielectric layer by the first part.

### Claim 17 (depends on 16)

The device of claim 16, wherein the first thickness and the second thickness are measured in directions perpendicular to outer surfaces of the first portion and the second portion, respectively.

### Claim 18 (depends on 17)

The device of claim 17, wherein the first portion is a horizontal portion on a top surface or a bottom surface of a corresponding one of the plurality of semiconductor strips, and the first thickness is measured in a direction perpendicular to the top surface, and the second portion is a corner portion at a corner of the corresponding one of the plurality of semiconductor strips, and the second thickness is measured in a direction that is neither parallel to nor perpendicular to the top surface.

### Claim 19 (depends on 17)

The device of claim 17, wherein the first thickness and the second thickness are viewed in a vertical plane that is perpendicular to a channel length direction of the plurality of semiconductor strips.

### Claim 20 (depends on 17)

The device of claim 17, wherein each of the plurality of oxide layers forms a full ring wrapping around a respective one of the plurality of semiconductor strips.