# US 12,218,184 B2 · Semiconductor structure and method for forming the same

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- Number: US 12,218,184 B2
- Document ID: US12218184B2
- Status: Granted
- Kind: B2
- Application number: 17/824,924
- Filed: 2022-05-26
- Published: 2023-11-30
- Granted: 2025-02-04
- Earliest claimed: 2022-05-26
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Company Ltd.
- Inventors: Jui-Lin Chu; Szu-Yu Wang; Ching I Li
- Web page: https://patentgrep.com/patent/US12218184B2

## CPC

- H10D 1/692: {Electrodes}
- H10D 1/696: {comprising multiple layers, e.g. comprising a barrier layer and a metal layer (barrier layers to prevent diffusion of hydrogen or oxygen in perovskite based capacitors H10D1/688)}
- H01G 4/10: Metal-oxide dielectrics {(H01G4/085 takes precedence)}
- H01G 4/33: Thin- or thick-film capacitors {(thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)}
- H10D 1/042: {using deposition processes to form electrode extensions}
- H10D 1/716: {having vertical extensions}
- H10W 20/081: {by forming openings in the dielectric parts}
- H10W 20/496: {Capacitor integral with wiring layers}
- H01G 4/08: Inorganic dielectrics
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10)
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor structure includes a capacitor structure and a contact structure. The capacitor structure includes an electrode layer, a protective dielectric layer, and a capacitor dielectric layer. The protective dielectric layer covers a top surface of the electrode layer. The capacitor dielectric layer is on the protective oxide layer. The contact structure penetrates the protective oxide layer and electrically connects to the electrode layer.

## Claims

### Claim 1

A semiconductor structure, comprising:
a capacitor structure, comprising:
a first electrode layer;
a second electrode layer over the first electrode layer;
a protective dielectric layer covering and contacting a top surface of the first electrode layer;
a capacitor dielectric layer on the protective dielectric layer; and
a protective dielectric sidewall covering a lateral surface of the second electrode layer, wherein the first electrode layer, the second electrode layer, the protective dielectric sidewall, and the protective dielectric layer comprise a same metal element;
a contact structure penetrating the protective dielectric layer and electrically connecting to the second electrode layer.

### Claim 2 (depends on 1)

The semiconductor structure of claim 1, wherein the protective dielectric layer is between the first electrode layer and the capacitor dielectric layer, and a ratio of a thickness of the protective dielectric layer to a thickness of the capacitor dielectric layer is greater than about 0.25.

### Claim 3 (depends on 2)

The semiconductor structure of claim 2, wherein the same metal element comprises titanium.

### Claim 4 (depends on 1)

The semiconductor structure of claim 1, further comprising a dielectric layer between the first electrode layer and the second electrode layer.

### Claim 5 (depends on 4)

The semiconductor structure of claim 4, further comprising a dielectric structure covering the capacitor structure and contacting the protective dielectric sidewall.

### Claim 6 (depends on 5)

The semiconductor structure of claim 5, wherein the second electrode layer is spaced apart from the dielectric structure by the protective dielectric sidewall.

### Claim 7 (depends on 6)

The semiconductor structure of claim 6, wherein the contact structure contacts the dielectric structure and the protective dielectric layer.

### Claim 8

A semiconductor structure, comprising:
a semiconductor substrate;
a first conductive layer on the semiconductor substrate;
a second conductive layer below the first conductive layer;
a first dielectric layer over the first conductive layer;
a second dielectric layer between the second conductive layer and the first conductive layer;
a first buffer oxide sidewall over the second dielectric layer and covering a lateral surface of the first conductive layer; and
a first buffer oxide layer covering and contacting a top surface of the second conductive layer, wherein the second conductive layer, the first conductive layer, the first buffer oxide sidewall, and the first buffer oxide layer comprise a same metal element.

### Claim 9 (depends on 8)

The semiconductor structure of claim 8, wherein the first buffer oxide layer is between the second conductive layer and the second dielectric layer, and a ratio of a thickness of the first buffer oxide layer to a thickness of the second dielectric layer is greater than about 0.25.

### Claim 10 (depends on 9)

The semiconductor structure of claim 9, further comprising a first contact structure penetrating the first dielectric layer to contact the first conductive layer.

### Claim 11 (depends on 8)

The semiconductor structure of claim 8, further comprising a second buffer oxide sidewall on a lateral surface of the second conductive layer.

### Claim 12 (depends on 8)

The semiconductor structure of claim 8, further comprising:
a second buffer oxide layer between the second conductive layer and the second dielectric layer.

### Claim 13 (depends on 12)

The semiconductor structure of claim 12, further comprising a second contact structure penetrating the second dielectric layer and the second buffer oxide layer to contact the second conductive layer.

### Claim 14 (depends on 12)

The semiconductor structure of claim 12, wherein the first buffer oxide sidewall is on a top surface of the second dielectric layer.

### Claim 15

A semiconductor structure, comprising:
a capacitor structure, comprising:
a first electrode layer;
a second electrode layer over the first electrode layer;
a first dielectric layer between the first electrode layer and the second electrode layer; and
a first buffer oxide sidewall over the first dielectric layer and covering a lateral surface of the second electrode layer; and
a first contact structure penetrating the first dielectric layer and electrically connected to the first electrode layer,
wherein the capacitor structure further comprises a first buffer oxide layer covering and contacting a top surface of the first electrode layer, and
wherein the first electrode layer, the second electrode layer, the first buffer oxide sidewall, and the first buffer oxide layer comprise a same metal element.

### Claim 16 (depends on 15)

The semiconductor structure of claim 15, wherein the first buffer oxide sidewall is spaced apart from the first buffer oxide layer by the first dielectric layer.

### Claim 17 (depends on 15)

The semiconductor structure of claim 15, wherein the capacitor structure further comprises a second dielectric layer over the first buffer oxide layer, and the semiconductor structure further comprises a second contact structure penetrating the second dielectric layer and the first buffer oxide layer and electrically connected to the second electrode layer.

### Claim 18 (depends on 15)

The semiconductor structure of claim 15, wherein the first buffer oxide sidewall contacts the first dielectric layer and the lateral surface of the second electrode layer.

### Claim 19 (depends on 15)

The semiconductor structure of claim 15, further comprising a dielectric structure covering the capacitor structure and contacting the first buffer oxide sidewall and the first buffer oxide layer.

### Claim 20 (depends on 19)

The semiconductor structure of claim 19, wherein the first buffer oxide sidewall is spaced apart from the first buffer oxide layer by a portion of the dielectric structure.