# US 12,218,182 B2 · Semiconductor device and method for fabricating the same

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- Number: US 12,218,182 B2
- Document ID: US12218182B2
- Status: Granted
- Kind: B2
- Application number: 17/517,527
- Filed: 2021-11-02
- Published: 2022-11-10
- Granted: 2025-02-04
- Earliest claimed: 2021-05-04
- Assignees: SK hynix Inc.
- Applicants: SK hynix Inc.
- Inventors: Kwan Woo Do; Wan Joo Maeng; Jeong Yeop Lee; Ki Vin Im
- Web page: https://patentgrep.com/patent/US12218182B2

## CPC

- H10D 1/696: {comprising multiple layers, e.g. comprising a barrier layer and a metal layer (barrier layers to prevent diffusion of hydrogen or oxygen in perovskite based capacitors H10D1/688)}
- H01G 4/008: Selection of materials
- H01G 4/10: Metal-oxide dielectrics {(H01G4/085 takes precedence)}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10)

## Abstract

Embodiments of the present invention provide a semiconductor device capable of improving current leakage property and a method for fabricating the same. According to an embodiment of the present invention, a capacitor comprises: a lower electrode; a dielectric layer over the lower electrode; and an upper electrode over the dielectric layer, the upper electrode including a conductive carbon-containing layer, wherein a carbon content in the conductive carbon-containing layer is more than 5 at % and equal to or less than 10 at %.

## Claims

### Claim 1

A capacitor, comprising:
a lower electrode;
a dielectric layer over the lower electrode; and
an upper electrode over the dielectric layer, the upper electrode including a conductive carbon-containing layer,
wherein a carbon content in the conductive carbon-containing layer is more than 5% and equal to or less than 10%,
wherein the conductive carbon-containing layer includes a carbon and oxygen.

### Claim 2 (depends on 1)

The capacitor of claim 1, wherein the conductive carbon-containing layer includes a carbon-doped and oxygen-doped metal nitride.

### Claim 3 (depends on 1)

The capacitor of claim 1, wherein the conductive carbon-containing layer includes a carbon-doped and oxygen-doped titanium nitride.

### Claim 4 (depends on 1)

The capacitor of claim 1, wherein the conductive carbon-containing layer includes titanium carbon oxynitride.

### Claim 5 (depends on 1)

The capacitor of claim 1, wherein the conductive carbon-containing layer has a varying carbon content as a function of the distance from the dielectric layer.

### Claim 6 (depends on 1)

The capacitor of claim 1, wherein the upper electrode further includes a semiconductor material layer formed over the conductive carbon-containing layer.

### Claim 7 (depends on 1)

The capacitor of claim 1, wherein the upper electrode further includes a stack structure of a silicon germanium layer and a tungsten layer over the conductive carbon-containing layer.

### Claim 8 (depends on 1)

The capacitor of claim 1, wherein the lower electrode has a pillar-shape or a cylinder-shape.

### Claim 9 (depends on 1)

The capacitor of claim 1, further including a support supporting an outer wall of the lower electrode.

### Claim 10

A semiconductor device, comprising:
a dielectric layer over a substrate; and
a metal electrode over the dielectric layer, the metal electrode including a conductive carbon-containing layer,
wherein a carbon content in the conductive carbon-containing layer is more than 5% and equal to or less than 10%,
wherein the conductive carbon-containing layer includes a carbon and oxygen.

### Claim 11 (depends on 10)

The semiconductor device of claim 10, wherein the dielectric layer includes a high-k material.

### Claim 12 (depends on 10)

The semiconductor device of claim 10, wherein the conductive carbon-containing layer includes a carbon-doped and oxygen-doped metal nitride.

### Claim 13 (depends on 10)

The semiconductor device of claim 10, wherein the conductive carbon-containing layer includes a carbon-doped and oxygen-doped titanium nitride.

### Claim 14 (depends on 10)

The semiconductor device of claim 10, wherein the conductive carbon-containing layer includes titanium carbon oxynitride.

### Claim 15 (depends on 10)

The semiconductor device of claim 10, wherein the conductive carbon-containing layer has a varying carbon content as a function of the distance from the dielectric layer.

### Claim 16 (depends on 10)

The semiconductor device of claim 10, wherein the dielectric layer includes a tunnel dielectric layer of an ONO (Oxide-Nitride-Oxide) structure.