# US 12,218,180 B2 · Multi-layered resistor with a tight temperature coefficient of resistance tolerance

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- Number: US 12,218,180 B2
- Document ID: US12218180B2
- Status: Granted
- Kind: B2
- Application number: 18/366,156
- Filed: 2023-08-07
- Published: 2023-11-30
- Granted: 2025-02-04
- Earliest claimed: 2021-08-27
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Company, Ltd.
- Inventors: Szu-Hsien Lo; Che-Hung Liu; Tzu-Chung Tsai
- Web page: https://patentgrep.com/patent/US12218180B2

## CPC

- H10D 1/474: {comprising refractory metals, transition metals, noble metals, metal compounds or metal alloys, e.g. silicides}
- H10W 20/498: {Resistive arrangements or effects of, or between, wiring layers}
- H10W 20/42: Vias, e.g. via plugs
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Various embodiments of the present disclosure are directed towards an integrated chip (IC). The IC comprises a substrate. A resistor overlies the substrate. The resistor comprises a first metal nitride structure, a second metal nitride structure spaced from the first metal nitride structure, and a metal structure disposed between the first metal nitride structure and the second metal nitride structure. A first dielectric structure is disposed over the substrate and the resistor.

## Claims

### Claim 1

An integrated chip (IC), comprising:
a semiconductor substrate;
a first dielectric structure disposed over the semiconductor substrate;
a resistor disposed between the semiconductor substrate and first dielectric structure, the resistor comprising a continuous body of conductive material extending laterally over the semiconductor substrate, wherein continuous body comprises:
a first metal nitride structure;
a second metal nitride structure spaced apart vertically from the first metal nitride structure; and
a metal structure disposed between the first metal nitride structure and the second metal nitride structure;
a second dielectric structure disposed over the semiconductor substrate and the resistor; and
a pair of conductive structures extending through the second dielectric structure and electrically coupled to the second metal nitride structure.

### Claim 2

An integrated chip (IC), comprising:
a semiconductor substrate;
a first dielectric structure disposed over the semiconductor substrate;
a resistor disposed between the semiconductor substrate and first dielectric structure, the resistor comprising a continuous body of conductive material extending laterally over the semiconductor substrate, wherein continuous body comprises:
a first metal nitride structure;
a second metal nitride structure spaced apart vertically from the first metal nitride structure; and
a metal structure disposed between the first metal nitride structure and the second metal nitride structure;
a second dielectric structure disposed over the semiconductor substrate and the resistor; and
a pair of conductive structures extending through the second dielectric structure and electrically coupled to the second metal nitride structure, wherein:
the first metal nitride structure comprises a metal;
the metal structure comprises the metal; and
the second metal nitride structure comprises the metal.

### Claim 3 (depends on 2)

The IC of claim 2, wherein the metal is tantalum, titanium, or cobalt.

### Claim 4 (depends on 1)

The IC of claim 1, wherein:
the first metal nitride structure is tantalum nitride (TaN);
the metal structure is tantalum (Ta); and
the second metal nitride structure is TaN.

### Claim 5 (depends on 4)

The IC of claim 4, wherein:
the TaN of the first metal nitride structure comprises between about 5 percent nitrogen by atomic percent and about 50 percent nitrogen by atomic percent; and
the TaN of the second metal nitride structure comprises between about 5 percent nitrogen by atomic percent and about 50 percent nitrogen by atomic percent.

### Claim 6 (depends on 4)

The IC of claim 4, wherein:
the TaN of the first metal nitride structure is Ta2N; and
the TaN of the second metal nitride structure is Ta2N.

### Claim 7 (depends on 3)

The IC of claim 3, wherein a crystal structure of the metal structure is at least 50 percent body-centered cubic.

### Claim 8

An integrated chip (IC), comprising:
a semiconductor substrate;
a first dielectric structure disposed over the semiconductor substrate;
a resistor disposed between the semiconductor substrate and first dielectric structure, the resistor comprising a continuous body of conductive material extending laterally over the semiconductor substrate, wherein continuous body comprises:
a first metal nitride structure;
a second metal nitride structure spaced apart vertically from the first metal nitride structure; and
a metal structure disposed between the first metal nitride structure and the second metal nitride structure;
a second dielectric structure disposed over the semiconductor substrate and the resistor; and
a pair of conductive structures extending through the second dielectric structure and electrically coupled to the second metal nitride structure,
the first metal nitride structure has a first thickness; and
the second metal nitride structure has a second thickness that is greater than the first thickness.

### Claim 9 (depends on 1)

The IC of claim 1, wherein:
the resistor has a first thickness;
the metal structure has a second thickness; and
the second thickness is between about 5 percent and about 20 percent of the first thickness.

### Claim 10 (depends on 1)

The IC of claim 1, wherein:
the metal structure overlies the first metal nitride structure; and
the second metal nitride structure overlies the metal structure.

### Claim 11 (depends on 10)

The IC of claim 10, wherein:
outer sidewalls of the metal structure are substantially aligned with outer sidewalls of the first metal nitride structure, respectively; and
outer sidewalls of the second metal nitride structure are substantially aligned with the outer sidewalls of the metal structure, respectively.

### Claim 12 (depends on 1)

The IC of claim 1, wherein the first metal nitride structure, the metal structure, and the second metal nitride structure each comprise tantalum, titanium, or cobalt.

### Claim 13 (depends on 1)

The IC of claim 1, further comprising:
a capping structure disposed vertically between the second metal nitride structure and the second dielectric structure, wherein the capping structure is a nitride that has a different chemical composition than a first metal nitride material of the first metal nitride structure and a second metal nitride material of the second metal nitride structure.

### Claim 14 (depends on 2)

The IC of claim 2, wherein:
the first metal nitride structure comprises between about 5 percent nitrogen by atomic percent and about 50 percent nitrogen by atomic percent; and
the second metal nitride structure comprises between about 5 percent nitrogen by atomic percent and about 50 percent nitrogen by atomic percent.

### Claim 15 (depends on 2)

The IC of claim 2, further comprising:
a capping structure disposed vertically between the second metal nitride structure and the second dielectric structure, wherein the capping structure is a nitride that has a different chemical composition than a first metal nitride material of the first metal nitride structure and a second metal nitride material of the second metal nitride structure.

### Claim 16 (depends on 8)

The IC of claim 8, wherein:
the first metal nitride structure comprises tantalum nitride (TaN);
the metal structure comprises tantalum (Ta); and
the second metal nitride structure comprises TaN.

### Claim 17 (depends on 8)

The IC of claim 8, wherein:
the first metal nitride structure comprises between about 5 percent nitrogen by atomic percent and about 50 percent nitrogen by atomic percent; and
the second metal nitride structure comprises between about 5 percent nitrogen by atomic percent and about 50 percent nitrogen by atomic percent.

### Claim 18 (depends on 8)

The IC of claim 8, wherein:
the first metal nitride structure comprises a metal;
the metal structure comprises the metal; and
the second metal nitride structure comprises the metal.

### Claim 19 (depends on 18)

The IC of claim 18, wherein the metal is tantalum, titanium, or cobalt.

### Claim 20 (depends on 8)

The IC of claim 8, further comprising:
a capping structure disposed vertically between the second metal nitride structure and the second dielectric structure, wherein the capping structure is a nitride that has a different chemical composition than a first metal nitride material of the first metal nitride structure and a second metal nitride material of the second metal nitride structure;
wherein a crystal structure of the metal structure is at least 50 percent body-centered cubic; and
wherein a material of the first metal nitride structure, the second metal nitride structure, and the metal structure comprises a transition metal.