# US 12,218,170 B2 · Light detection device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,218,170 B2 - Document ID: US12218170B2 - Status: Granted - Kind: B2 - Application number: 17/714,904 - Filed: 2022-04-06 - Published: 2022-07-21 - Granted: 2025-02-04 - Earliest claimed: 2016-07-27 - Assignees: Hamamatsu Photonics K.K. - Applicants: Hamamatsu Photonics K.K. - Inventors: Atsushi Ishida; Noburo Hosokawa; Terumasa Nagano; Takashi Baba - Web page: https://patentgrep.com/patent/US12218170B2 ## CPC - H10F 39/811: {Interconnections} - H10F 30/225: the potential barrier working in avalanche mode, e.g. avalanche photodiodes - H10F 39/1898: {Indirect radiation image sensors, e.g. using luminescent members} - H10F 39/802: {Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes} - H10F 77/147: {Shapes of bodies} - H10F 77/241: {comprising ring electrodes} - H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV] - H10W 20/2125: {Top-view shapes} - H10W 20/216: {characterised by dielectric material at least partially filling the via holes, e.g. covering the through-semiconductor vias in the via holes} - H10F 39/807: {Pixel isolation structures} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A photodetecting device includes a semiconductor substrate, a plurality of avalanche photodiodes each including a light receiving region disposed at a first principal surface side of the semiconductor substrate, the avalanche photodiodes being arranged two-dimensionally at the semiconductor substrate, and a through-electrode electrically connected to a corresponding light receiving region. The through-electrode is provided in a through-hole penetrating through the semiconductor substrate in an area where the plurality of avalanche photodiodes are arranged two-dimensionally. At the first principal surface side of the semiconductor substrate, a groove surrounding the through-hole is formed between the through-hole and the light receiving region adjacent to the through-hole. A first distance between an edge of the groove and an edge of the through-hole surrounded by the groove is longer than a second distance between the edge of the groove and an edge of the light receiving region adjacent to the through-hole surrounded by the groove. ## Claims ### Claim 1 A photodetecting device comprising: a semiconductor substrate including a first principal surface and a second principal surface that oppose each other; a plurality of avalanche photodiodes each including a light receiving region disposed at the first principal surface side of the semiconductor substrate, the avalanche photodiodes being distributed in a matrix at the semiconductor substrate, and arranged to operate in Geiger mode; and a plurality of through-electrodes electrically connected to corresponding light receiving regions, and penetrating through the semiconductor substrate in a thickness direction, wherein at the first principal surface of the semiconductor substrate, a groove is formed independently for each light receiving region to surround the light receiving region when viewed from a direction perpendicular to the first principal surface, a distance between edges of the groove at the first principal surface is smaller than a width of the light receiving region, a distance from the first principal surface to a bottom surface of the groove in the thickness direction is longer than a distance from the first principal surface to a PN junction included in the avalanche photodiode in the thickness direction, the semiconductor substrate is formed with a through-hole in which the through-electrode is disposed, and at the first principal surface, a distance from an edge of the through-hole to an edge, closer to the through-hole, of the edges of the groove is longer than the distance between the edges of the groove. ### Claim 2 (depends on 1) The photodetecting device according to claim 1, wherein, when viewed from the direction perpendicular to the first principal surface, an area surrounded by the groove has a polygonal shape, and the light receiving region has a polygonal shape. ### Claim 3 (depends on 1) The photodetecting device according to claim 1, wherein when viewed from the direction perpendicular to the first principal surface, an opening of the through-hole has a circular shape, and an insulating layer is disposed on an inner peripheral surface of the through-hole. ### Claim 4 (depends on 1) The photodetecting device according to claim 1, wherein the grooves formed to surround the light receiving regions adjacent to each other are separated from each other. ### Claim 5 A photodetecting device comprising: a semiconductor substrate including a first principal surface and a second principal surface that oppose each other; a plurality of avalanche photodiodes each including a light receiving region disposed at the first principal surface side of the semiconductor substrate, the avalanche photodiodes being distributed in a matrix at the semiconductor substrate, and arranged to operate in Geiger mode; and a plurality of through-electrodes electrically connected to corresponding light receiving regions, and penetrating through the semiconductor substrate in a thickness direction, wherein at the first principal surface of the semiconductor substrate, a groove is formed to surround each of the light receiving regions when viewed from a direction perpendicular to the first principal surface, a distance between edges of the groove at the first principal surface is smaller than a width of the light receiving region, a distance from the first principal surface to a bottom surface of the groove in the thickness direction is longer than a distance from the first principal surface to a PN junction included in the avalanche photodiode in the thickness direction, the semiconductor substrate is formed with a through-hole in which the through-electrode is disposed, and at the first principal surface, a distance from an edge of the through-hole to an edge, closer to the through-hole, of the edges of the groove is longer than the distance between the edges of the groove. ### Claim 6 (depends on 5) The photodetecting device according to claim 5, wherein, when viewed from the direction perpendicular to the first principal surface, an area surrounded by the groove has a polygonal shape, and the light receiving region has a polygonal shape. ### Claim 7 (depends on 5) The photodetecting device according to claim 5, wherein when viewed from the direction perpendicular to the first principal surface, an opening of the through-hole has a circular shape, and an insulating layer is disposed on an inner peripheral surface of the through-hole.