# US 12,218,144 B2 · Semiconductor device having specified relative material concentration between In—Ga—Zn—O films

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- Number: US 12,218,144 B2
- Document ID: US12218144B2
- Status: Granted
- Kind: B2
- Application number: 18/531,767
- Filed: 2023-12-07
- Published: 2024-03-28
- Granted: 2025-02-04
- Earliest claimed: 2013-04-12
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Shunpei Yamazaki; Junichi Koezuka; Yasutaka Nakazawa; Yukinori Shima; Masami Jintyou; Masayuki Sakakura; Motoki Nakashima
- Web page: https://patentgrep.com/patent/US12218144B2

## CPC

- H10D 86/60: wherein the TFTs are in active matrices
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)}
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 99/00: Subject matter not provided for in other groups of this subclass
- H10D 62/40: Crystalline structures
- H10D 62/405: {Orientations of crystalline planes}
- H10D 86/425: {having different crystal properties in different TFTs or within an individual TFT}
- H10P 14/3466: {Crystal orientation}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

The stability of a step of processing a wiring formed using copper, aluminum, gold, silver, molybdenum, or the like is increased. Moreover, the concentration of impurities in a semiconductor film is reduced. Moreover, the electrical characteristics of a semiconductor device are improved. In a transistor including an oxide semiconductor film, an oxide film in contact with the oxide semiconductor film, and a pair of conductive films being in contact with the oxide film and including copper, aluminum, gold, silver, molybdenum, or the like, the oxide film has a plurality of crystal parts and has c-axis alignment in the crystal parts, and the c-axes are aligned in a direction parallel to a normal vector of a top surface of the oxide semiconductor film or the oxide film.

## Claims

### Claim 1

A display device comprising:
a gate electrode over a substrate;
a gate insulating film over the gate electrode;
a first In—Ga—Zn oxide film over the gate insulating film;
a second In—Ga—Zn oxide film over the first In—Ga—Zn oxide film;
a pair of electrodes over the second In—Ga—Zn oxide film, the pair of electrodes comprising titanium;
a pixel electrode electrically connected to one of the pair of electrodes; and
a liquid crystal layer over the pixel electrode,
wherein the first In—Ga—Zn oxide film comprises In, Ga, and Zn at an atomic ratio of 1:1:1, and
wherein the second In—Ga—Zn oxide film comprises In, Ga, and Zn at an atomic ratio of 1:3:6.

### Claim 2 (depends on 1)

The display device according to claim 1, wherein the substrate is a glass substrate.

### Claim 3 (depends on 1)

The display device according to claim 1, wherein the gate electrode has a stacked structure of two layers comprising metal elements selected from chromium, copper, aluminum, gold, silver, molybdenum, tantalum, titanium, and tungsten.

### Claim 4 (depends on 1)

The display device according to claim 1, wherein the first In—Ga—Zn oxide film has a microcrystalline structure.

### Claim 5 (depends on 1)

The display device according to claim 1, wherein the second In—Ga—Zn oxide film has a non-single crystal structure and comprises c-axis aligned crystals.

### Claim 6 (depends on 1)

The display device according to claim 1, wherein the liquid crystal layer is configured to be driven by an FFS mode.

### Claim 7

A display device comprising:
a gate electrode over a substrate;
a gate insulating film over the gate electrode;
a first In—Ga—Zn oxide film over the gate insulating film;
a second In—Ga—Zn oxide film over the first In—Ga—Zn oxide film;
a pair of electrodes over the second In—Ga—Zn oxide film, the pair of electrodes comprising titanium;
a first oxide insulating film over the pair of electrodes, the first oxide insulating film having a region being in contact with the second In—Ga—Zn oxide film;
a pixel electrode over the first oxide insulating film, the pixel electrode electrically connected to one of the pair of electrodes; and
a liquid crystal layer over the pixel electrode,
wherein the first In—Ga—Zn oxide film comprises In, Ga, and Zn at an atomic ratio of 1:1:1, and
wherein the second In—Ga—Zn oxide film comprises In, Ga, and Zn at an atomic ratio of 1:3:6.

### Claim 8 (depends on 7)

The display device according to claim 7, wherein the substrate is a glass substrate.

### Claim 9 (depends on 7)

The display device according to claim 7, wherein the gate electrode has a stacked structure of two layers comprising metal elements selected from chromium, copper, aluminum, gold, silver, molybdenum, tantalum, titanium, and tungsten.

### Claim 10 (depends on 7)

The display device according to claim 7, wherein the first In—Ga—Zn oxide film has a microcrystalline structure.

### Claim 11 (depends on 7)

The display device according to claim 7, wherein the second In—Ga—Zn oxide film has a non-single crystal structure and comprises c-axis aligned crystals.

### Claim 12 (depends on 7)

The display device according to claim 7, wherein the liquid crystal layer is configured to be driven by an FFS mode.

### Claim 13

A display device comprising:
a gate electrode over a substrate;
a gate insulating film over the gate electrode;
a first In—Ga—Zn oxide film over the gate insulating film;
a second In—Ga—Zn oxide film over and in contact with the first In—Ga—Zn oxide film;
a pair of electrodes over and in contact with the second In—Ga—Zn oxide film, the pair of electrodes comprising titanium;
a pixel electrode electrically connected to one of the pair of electrodes; and
a liquid crystal layer over the pixel electrode,
wherein the gate insulating film comprises a nitride insulating film and an oxide insulating film provided over the nitride insulating film,
wherein the first In—Ga—Zn oxide film comprises In, Ga, and Zn at an atomic ratio of 1:1:1, and
wherein the second In—Ga—Zn oxide film comprises In, Ga, and Zn at an atomic ratio of 1:3:6.

### Claim 14 (depends on 13)

The display device according to claim 13, wherein the substrate is a glass substrate.

### Claim 15 (depends on 13)

The display device according to claim 13, wherein the gate electrode has a stacked structure of two layers comprising metal elements selected from chromium, copper, aluminum, gold, silver, molybdenum, tantalum, titanium, and tungsten.

### Claim 16 (depends on 13)

The display device according to claim 13, wherein the first In—Ga—Zn oxide film has a microcrystalline structure.

### Claim 17 (depends on 13)

The display device according to claim 13, wherein the second In—Ga—Zn oxide film has a non-single crystal structure and comprises c-axis aligned crystals.

### Claim 18 (depends on 13)

The display device according to claim 13, wherein the liquid crystal layer is configured to be driven by an FFS mode.