Nitride-based semiconductor bidirectional switching device and method for manufacturing the same

A method for manufacturing a nitride-based switching device, comprising:

• forming a first nitride-based semiconductor layer over a substrate;
• forming a second nitride-based semiconductor layer on the first nitride-based semiconductor layer;
• disposing a gate semiconductor layer on the second nitride-based semiconductor layer and a gate electrode layer on the gate semiconductor layer, and patterning the gate semiconductor layer and the gate electrode layer to form one or more gate structures;
• forming a first passivation layer on the second nitride-based semiconductor layer to cover the gate structures;
• forming one or more openings in the first passivation layer to expose some regions of the second nitride-based semiconductor layer, disposing a S/D electrode layer to cover the first passivation layer and exposed regions of the second nitride-based semiconductor layer, and patterning the S/D electrode layer to form one or more S/D electrodes penetrating through the first passivation layer and in contact with the second nitride-based semiconductor layer;
• forming a second passivation layer on the first passivation layer to cover the S/D electrodes;
• forming one or more first conductive vias within the second passivation layer;
• forming a first conductive layer on the second passivation layer and patterning the first conductive layer to form one or more first patterned conductive traces;
• forming a third passivation layer on the first conductive layer to cover the one or more conductive traces;
• forming one or more second conductive vias within the third passivation layer;
• forming at least one through gallium vias (TGV) that extends longitudinally from the second conductive layer and penetrates into the substrate;
• forming a second conductive layer on the third passivation layer and patterning the second conductive layer to form one or more second patterned conductive traces;
• forming a protection layer above the second conductive layer and patterning the protection layer to form one or more openings to expose one or more conductive pads including a control pad, a first power/load pad and a second power/load pad.