# US 12,218,091 B2 · Superconducting bump bonds for quantum computing systems > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,218,091 B2 - Document ID: US12218091B2 - Status: Granted - Kind: B2 - Application number: 18/177,876 - Filed: 2023-03-03 - Published: 2023-06-29 - Granted: 2025-02-04 - Earliest claimed: 2021-01-29 - Assignees: Google Inc. - Applicants: Google LLC - Inventors: Zhimin Jamie Yao; Bob Benjamin Buckley - Web page: https://patentgrep.com/patent/US12218091B2 ## CPC - G06N 10/00: Quantum computing, i.e. information processing based on quantum-mechanical phenomena - H10N 69/00: Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group H10N60/00 - H10W 72/012: {of bump connectors, dummy bumps or thermal bumps} - H10W 72/072: {of bump connectors} - H10W 72/20: Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps - H10W 72/90: Bond pads, in general - H10W 90/00: Package configurations - H10W 99/00: Subject matter not provided for in other groups of this subclass - G06N 10/40: Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control - H10W 72/07221: {Aligning} - H10W 72/07232: {Compression bonding, e.g. thermocompression bonding} - H10W 72/223: {characterised by the structure of the outermost layers, e.g. multilayered coatings} - H10W 72/252: {comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu} - H10W 72/255: {of outermost layers of multilayered bumps, e.g. material of a coating} - H10W 90/26: the stacked chips being of the same size without any chips being laterally offset, e.g. chip stacks having a rectangular shape - H10W 90/722: {between stacked chips} - G06N: COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A quantum computing system can include a first substrate including one or more quantum control devices. The quantum computing system can include a second substrate including one or more quantum circuit elements. The quantum computing system can include one or more tin contact bonds formed on the first substrate and the second substrate. The tin contact bonds can bond the first substrate to the second substrate. The tin contact bonds can be or can include tin, such as a tin alloy. ## Claims ### Claim 1 A method for bonding substrates, the method comprising: depositing, on a first substrate, one or more tin bond deposits, the one or more tin bond deposits comprising tin; heating the first substrate to a tin contact bond formation temperature; and pressing the first substrate against a second substrate to form one or more tin contact bonds from the one or more tin bond deposits; wherein one of the first substrate or the second substrate comprises one or more qubits and another of the first substrate or the second substrate comprises one or more control devices configured to control the one or more qubits. ### Claim 2 (depends on 1) The method of claim 1 further comprising, prior to pressing the first substrate against the second substrate, depositing, on the second substrate, one or more second tin bond deposits, the one or more second tin bond deposits comprising tin, wherein the one or more tin contact bonds are formed from the one or more second tin bond deposits. ### Claim 3 (depends on 1) The method of claim 1, further comprising coating the one or more tin bond deposits with a capping layer, wherein the capping layer is broken when the first substrate is pressed against the second substrate to form the one or more tin contact bonds. ### Claim 4 (depends on 1) The method of claim 1, wherein the one or more tin bond deposits comprise a superconducting tin alloy, the superconducting tin alloy comprising at least one of lead, bismuth, antimony, gold, niobium, copper, cadmium, silver, indium, or gallium, the superconducting tin alloy superconducting at temperatures less than about 1 kelvin. ### Claim 5 (depends on 1) The method of claim 1, wherein depositing the one or more tin bond deposits comprises depositing the one or more tin bond deposits by a sputtering deposition process. ### Claim 6 (depends on 1) The method of claim 1, further comprising performing one or more subsequent process steps subsequent to pressing the first substrate against the second substrate to form the one or more tin contact bonds from the one or more tin bond deposits, the one or more subsequent process steps comprising heating at least one of the first substrate or the second substrate to a temperature less than a melting point of the one or more tin contact bonds. ### Claim 7 A method of bonding substrates, the method comprising: depositing, on a first substrate, one or more tin bond deposits, the one or more tin bond deposits comprising tin; heating the first substrate to a tin contact bond formation temperature; pressing the first substrate against a second substrate to form one or more tin contact bonds from the one or more tin bond deposits; depositing, on at least one of the first substrate or a third substrate, one or more second bond deposits, the one or more second bond deposits forming contact bonds at a second contact bond formation temperature, the second contact bond formation temperature being less than a melting point of the one or more tin contact bonds; heating the at least one of the first substrate or the third substrate to the second contact bond formation temperature and not exceeding the melting point of the one or more tin contact bonds; and pressing the first substrate against the third substrate to form one or more second contact bonds from the one or more second bond deposits. ### Claim 8 (depends on 7) The method of claim 7, further comprising, prior to pressing the first substrate against the third substrate, depositing, on the third substrate, one or more additional second bond deposits, wherein the one or more second contact bonds are formed from the one or more additional second bond deposits. ### Claim 9 (depends on 7) The method of claim 7, wherein the one or more second bond deposits comprise indium. ### Claim 10 (depends on 7) The method of claim 7, further comprising aligning the first substrate and the third substrate. ### Claim 11 (depends on 7) The method of claim 7, wherein depositing the one or more second bond deposits comprises depositing the one or more second bond deposits by an evaporative deposition process. ### Claim 12 A method for bonding substrates, the method comprising: depositing, on a first substrate, one or more tin bond deposits, the one or more tin bond deposits comprising tin; heating the first substrate to a tin contact bond formation temperature; and pressing the first substrate against a second substrate to form one or more tin contact bonds from the one or more tin bond deposits; and further comprising: coating the one or more tin bond deposits with a capping layer, wherein the capping layer is broken when the first substrate is pressed against the second substrate to form the one or more tin contact bonds. ### Claim 13 (depends on 12) The method of claim 12 further comprising, prior to pressing the first substrate against the second substrate, depositing, on the second substrate, one or more second tin bond deposits, the one or more second tin bond deposits comprising tin, wherein the one or more tin contact bonds are formed from the one or more second tin bond deposits. ### Claim 14 (depends on 12) The method of claim 12, wherein the one or more tin bond deposits comprise a superconducting tin alloy, the superconducting tin alloy comprising at least one of lead, bismuth, antimony, gold, niobium, copper, cadmium, silver, indium, or gallium, the superconducting tin alloy superconducting at temperatures less than about 1 kelvin. ### Claim 15 (depends on 12) The method of claim 12, wherein depositing the one or more tin bond deposits comprises depositing the one or more tin bond deposits by a sputtering deposition process. ### Claim 16 (depends on 12) The method of claim 12, further comprising performing one or more subsequent process steps subsequent to pressing the first substrate against the second substrate to form the one or more tin contact bonds from the one or more tin bond deposits, the one or more subsequent process steps comprising heating at least one of the first substrate or the second substrate to a temperature less than a melting point of the one or more tin contact bonds.