# US 12,218,072 B2 · Semiconductor device and method for manufacturing the same

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- Number: US 12,218,072 B2
- Document ID: US12218072B2
- Status: Granted
- Kind: B2
- Application number: 17/412,022
- Filed: 2021-08-25
- Published: 2022-09-08
- Granted: 2025-02-04
- Earliest claimed: 2021-03-02
- Assignees: Kioxia Corporation
- Applicants: Kioxia Corporation
- Inventors: Yoichi Mizuta; Takahiro Tsurudo; Yoshiaki Takahashi; Kenichi Matoba; Yoshifumi Shimamura; Toru Ozawa; Takumi Kosaki; Kouji Nakao
- Web page: https://patentgrep.com/patent/US12218072B2

## CPC

- H10W 46/00: Marks applied to devices, e.g. for alignment or identification
- H10P 74/203: {Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects}
- H10W 20/01: {Manufacture or treatment}
- H10W 20/42: Vias, e.g. via plugs
- H10W 20/43: Layouts of interconnections
- H10P 74/273: {Interconnections for measuring or testing, e.g. probe pads}
- H10W 46/301: {for alignment}
- H10W 46/401: {for identification or tracking}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

According to one embodiment, a semiconductor device includes a circuit pattern including a plurality of unit patterns that are disposed in a repeating manner in at least one direction. The semiconductor device includes a discrimination pattern provided in the circuit pattern and configured to discriminate the unit patterns from each other.

## Claims

### Claim 1

A semiconductor device comprising:
a circuit pattern including a plurality of unit patterns that are disposed in a repeating manner in a first direction; and
a discrimination pattern provided in the circuit pattern and configured to discriminate the plurality of unit patterns from each other,
wherein the discrimination pattern has a corresponding one of a plurality of discrimination figures different from each other, and each of the plurality of discrimination figures corresponds to a respective one of the plurality of unit patterns,
wherein the plurality of discrimination figures are arranged along a second direction, which is different from the first direction, and respective lengths of the plurality of discrimination figures in the second direction are different from each other.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein the plurality of discrimination figures include breaks, respectively, and locations of the breaks are different for each other across the plurality of discrimination figures.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, wherein the plurality of unit patterns each extend in the second direction and is formed repeatedly in the first direction, and wherein short sides of the plurality of unit patterns exist in a same straight line extending in the first direction.

### Claim 4 (depends on 1)

The semiconductor device according to claim 1, wherein the first direction is perpendicular to the second direction.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1, wherein each of the plurality of discrimination figures corresponds to a predetermined ratio of the plurality of unit patterns.

### Claim 6 (depends on 1)

The semiconductor device according to claim 1, wherein gap regions exist between adjacent ones of the plurality of unit patterns, and the plurality of discrimination figures are disposed in the gap regions, respectively.

### Claim 7 (depends on 1)

The semiconductor device according to claim 1, wherein the plurality of discrimination figures are spaced apart from the plurality of unit patterns.

### Claim 8 (depends on 1)

The semiconductor device according to claim 1, wherein the circuit pattern and the discrimination pattern are provided in a same layer.

### Claim 9 (depends on 1)

The semiconductor device according to claim 1, wherein the circuit pattern is a wiring made of a material, and the discrimination pattern is formed of the same material.

### Claim 10 (depends on 1)

The semiconductor device according to claim 1, wherein the circuit pattern is a wiring, and the discrimination pattern is configured to modify the plurality of unit patterns.

### Claim 11 (depends on 1)

The semiconductor device according to claim 1, wherein the circuit pattern is a groove or a hole, and the discrimination pattern is configured to modify the plurality of unit patterns.

### Claim 12 (depends on 1)

The semiconductor device according to claim 1, further comprising:
an additional discrimination pattern separated from the discrimination pattern with a predetermined interval.