# US 12,218,022 B2 · Passivation structure with planar top surfaces

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- Number: US 12,218,022 B2
- Document ID: US12218022B2
- Status: Granted
- Kind: B2
- Application number: 18/355,799
- Filed: 2023-07-20
- Published: 2023-11-09
- Granted: 2025-02-04
- Earliest claimed: 2021-02-12
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Co., Ltd.
- Inventors: Yi-Hsiu Chen; Wen-Chih Chiou; Chen-Hua Yu
- Web page: https://patentgrep.com/patent/US12218022B2

## CPC

- H10W 74/137: {the encapsulations being directly on the semiconductor body (H10W74/134 takes precedence)}
- H10W 74/147: {the encapsulations being multilayered}
- H10W 70/09: extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
- H10W 70/611: {for connecting multiple chips together}
- H10W 70/65: Shapes or dispositions of interconnections
- H10W 70/685: comprising multiple insulating layers
- H10W 74/01: Manufacture or treatment
- H10W 80/00: Direct bonding of chips, wafers or substrates
- H10W 90/00: Package configurations
- H10W 90/401: {characterised by multiple insulating or insulated package substrates, interposers or RDLs}
- H10W 90/701: {characterised by the relative positions of pads or connectors relative to package parts}
- H10W 70/60: Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40)
- H10W 72/01: {Manufacture or treatment}
- H10W 72/012: {of bump connectors, dummy bumps or thermal bumps}
- H10W 72/01235: {by plating, e.g. electroless plating or electroplating}
- H10W 72/01257: {by reflowing}
- H10W 72/019: {of bond pads}
- H10W 72/01953: {by etching}
- H10W 72/0198: {batch processes}
- H10W 72/242: {relative to the surface, e.g. recessed, protruding}
- H10W 72/244: {relative to underlying supporting features, e.g. bond pads, RDLs or vias}
- H10W 72/29: Bond pads specially adapted therefor
- H10W 72/823: {Interconnections through encapsulations, e.g. pillars through molded resin on a lateral side a chip}
- H10W 72/874: {On different surfaces}
- H10W 72/923: {Bond pads having multiple stacked layers}
- H10W 72/934: {Cross-sectional shape, i.e. in side view}
- H10W 72/9415: {relative to the surface, e.g. recessed, protruding}
- H10W 72/944: {Dispositions of multiple bond pads}
- H10W 74/15: on active surfaces of flip-chip devices, e.g. underfills
- H10W 80/312: {characterised by the direct bonding of electrically conductive pads}
- H10W 80/327: {characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers}
- H10W 80/743: {having disposition changed during the connecting}
- H10W 90/22: the stacked chips being on both top and bottom sides of a package substrate, interposer or RDL
- H10W 90/26: the stacked chips being of the same size without any chips being laterally offset, e.g. chip stacks having a rectangular shape
- H10W 90/297: {characterised by the through-semiconductor vias [TSVs] in the stacked chips}
- H10W 90/721: {of bump connectors}
- H10W 90/722: {between stacked chips}
- H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/792: {between multiple chips}
- H10W 99/00: Subject matter not provided for in other groups of this subclass
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A method includes forming a first passivation layer, forming a metal pad over the first passivation layer, forming a planarization layer having a planar top surface over the metal pad, and patterning the planarization layer to form a first opening. A top surface of the metal pad is revealed through the first opening. The method further includes forming a polymer layer extending into the first opening, and patterning the polymer layer to form a second opening. The top surface of the metal pad is revealed through the second opening.

## Claims

### Claim 1

A structure comprising:
a metal pad;
a passivation layer, with a portion of the passivation layer overlapping a part of the metal pad;
a planarization layer comprising a planar top surface, wherein the planar top surface comprises:
a first part overlapping the metal pad; and
a second part vertically offset from the metal pad;
a polymer layer comprising:
a first portion overlapping the planarization layer; and
a second portion extending into the planarization layer and the passivation layer to contact the metal pad; and
a conductive feature in the polymer layer to contact the metal pad.

### Claim 2 (depends on 1)

The structure of claim 1, wherein both of the passivation layer and the planarization layer comprise inorganic dielectric materials.

### Claim 3 (depends on 1)

The structure of claim 1, wherein the planarization layer forms a non-planar bottom interface with the passivation layer.

### Claim 4 (depends on 1)

The structure of claim 1, wherein the passivation layer comprises a first edge overlapping the metal pad, and the planarization layer comprises a second edge overlapping the metal pad, and wherein the second edge is continuously joined to the first edge.

### Claim 5 (depends on 4)

The structure of claim 4, wherein the polymer layer contacts both of the first edge and the second edge.

### Claim 6 (depends on 4)

The structure of claim 4, wherein the second edge is vertically aligned to the first edge.

### Claim 7 (depends on 1)

The structure of claim 1, wherein the conductive feature comprises:
a conductive adhesion layer; and
a conductive region on the conductive adhesion layer.

### Claim 8 (depends on 1)

The structure of claim 1, wherein the conductive feature comprises a solder region.

### Claim 9 (depends on 1)

The structure of claim 1, wherein the passivation layer further comprises an additional portion vertically offset from the metal pad.

### Claim 10 (depends on 1)

The structure of claim 1 further comprising an additional passivation underlying and contacting the passivation layer.

### Claim 11 (depends on 1)

The structure of claim 1, wherein the metal pad comprises a bump protruding higher than remaining portions of the metal pad, wherein the bump is in contact with the conductive feature.

### Claim 12

A structure comprising:
a metal pad;
a first passivation layer on a sidewall and a top surface of the metal pad, wherein the first passivation layer comprises a first edge;
a planarization layer over the first passivation layer, wherein the planarization layer comprises a second edge continuously joined to the first edge; and
a polymer layer comprising:
an upper portion over the planarization layer; and
a lower portion in the planarization layer and the first passivation layer to contact the metal pad, wherein the lower portion contacts both of the first edge and the second edge.

### Claim 13 (depends on 12)

The structure of claim 12, wherein both of the first edge and the second edge are vertical.

### Claim 14 (depends on 12)

The structure of claim 12, wherein the second edge is vertically aligned to the first edge.

### Claim 15 (depends on 12)

The structure of claim 12 further comprising a conductive feature in the polymer layer, wherein the conductive feature overlaps and contacts the metal pad.

### Claim 16 (depends on 15)

The structure of claim 15, wherein top surfaces of the conductive feature and the polymer layer are coplanar.

### Claim 17 (depends on 12)

The structure of claim 12, wherein the metal pad comprises a center portion comprising a first top surface, and an edge portion comprising a second top surface, and wherein the second top surface is higher than the first top surface.

### Claim 18

A structure comprising:
a first passivation layer;
a conductive feature comprising a conductive via extending into the first passivation layer, and a conductive pad over the first passivation layer;
a second passivation layer comprising a portion over the conductive feature;
a planarization layer over the second passivation layer; and
a polymer layer comprising a portion over and contacting the conductive pad, wherein the polymer layer contacts both of the second passivation layer and the planarization layer.

### Claim 19 (depends on 18)

The structure of claim 18, wherein the polymer layer contacts top surfaces of both of the second passivation layer and the planarization layer.

### Claim 20 (depends on 18)

The structure of claim 18, wherein the polymer layer contacts edges of both of the second passivation layer and the planarization layer.