# US 12,218,015 B2 · Interferometer systems and methods for real time etch process compensation control > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,218,015 B2 - Document ID: US12218015B2 - Status: Granted - Kind: B2 - Application number: 17/397,989 - Filed: 2021-08-10 - Published: 2022-10-20 - Granted: 2025-02-04 - Earliest claimed: 2021-04-16 - Assignees: Taiwan Semiconductor Manufacturing Company, Ltd. - Applicants: Taiwan Semiconductor Manufacturing Company, Ltd. - Inventors: Chansyun Yang; Chan-Lon Yang; Keh-Jeng Chang; Perng-Fei Yuh - Web page: https://patentgrep.com/patent/US12218015B2 ## CPC - H10P 72/0421: {for drying etching} - H10P 74/23: {characterised by multiple measurements, corrections, marking or sorting processes} - G03F 7/70875: {Temperature, e.g. temperature control of masks or workpieces via control of stage temperature} - H01J 37/321: {the radio frequency energy being inductively coupled to the plasma} - H01J 37/32963: {End-point detection} - H01J 37/32972: {Spectral analysis} - H10P 72/0604: {Process monitoring, e.g. flow or thickness monitoring} - H10P 72/0616: {Monitoring of warpages, curvatures, damages, defects or the like} - H10P 74/203: {Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects} - H10P 74/207: {Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics} - G03F 7/70625: {Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness} - H10P 50/268: {of silicon-containing layers} - H10P 50/283: {by chemical means} - H10P 76/2042: {using lasers} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) ## Abstract An apparatus includes a beam conditioning assembly configured to output one or more wavelengths to a substrate being processed and receive one or more reflected wavelengths from the substrate, and a machine learning device configured to process the one or more reflected wavelengths to predict a process variable and compare the predicted process variable with a measured process variable to obtain a comparison result. ## Claims ### Claim 1 An apparatus comprising: a beam conditioning assembly configured to output one or more wavelengths to a substrate being processed and receive one or more reflected wavelengths from the substrate, wherein the beam conditioning assembly comprises: an orthogonal frequency division multiplex (OFDM) device configured to provide a plurality of beams each having a different wavelength; a beam selector configured to select the one or more wavelengths; and a multiple input multiple output (MIMO) device comprising a plurality of antenna elements configured to direct the selected one or more wavelengths as a beam to scan a surface of the substrate and receive the one or more reflected wavelengths; a device configured to process the one or more reflected wavelengths to predict, using a machine learning model, a process variable and compare the predicted process variable with a measured process variable to obtain a comparison result; and a laser device configured to direct a laser beam to a region of the substrate and change a lithophotographic condition of the region of the substrate in response to the comparison result. ### Claim 2 (depends on 1) The apparatus of claim 1, wherein the laser device comprises: a plurality of laser beams; and a second multiple input multiple output (MIMO) device comprising a second plurality of antennas configured to direct the plurality of laser beams to a plurality of regions of the substrate to heat up the plurality of regions of the substrate. ### Claim 3 (depends on 1) The apparatus of claim 1, wherein the lithophotographic condition comprises a temperature. ### Claim 4 (depends on 1) The apparatus of claim 1, wherein the beam conditioning assembly and the laser device are disposed inside of a process chamber. ### Claim 5 (depends on 1) The apparatus of claim 1, wherein the machine learning model comprises an input layer, at least two hidden layers, and an output layer. ### Claim 6 (depends on 1) The apparatus of claim 1, wherein the plurality of antenna elements are arranged in an arc configuration. ### Claim 7 (depends on 1) The apparatus of claim 1, wherein the predicted process variable comprises an etched depth of a layer on the substrate, and the device is configured to create an algorithm model for a depth prediction based on the one or more reflected wavelengths. ### Claim 8 (depends on 1) The apparatus of claim 1, further comprising: an off-axis parabolic mirror configured to direct the one or more wavelengths to the substrate and receive the one or more reflected wavelengths from the substrate. ### Claim 9 A system comprising: a process chamber for forming one or more layers on a substrate, wherein the process chamber comprises: a beam conditioning assembly configured to output one or more wavelengths; an off-axis parabolic mirror configured to direct the one or more wavelengths to a region of the substrate and receive one or more reflected wavelengths from the region of the substrate; a platform configured to support the substrate, the platform comprising a plurality of independently controllable temperature zones; and a laser device; and a device configured to process the one or more reflected wavelengths to predict a process variable and compare the predicted process variable with a predetermined process variable to obtain a comparison result, wherein the laser device is configured to direct a laser beam to the region of the substrate and change a temperature of the region of the substrate in response to the comparison result. ### Claim 10 (depends on 9) The system of claim 9, wherein the platform further comprises a plurality of temperature sensors, at least one of the plurality of temperature sensors being associated with one of the plurality of independently controllable temperature zones. ### Claim 11 (depends on 9) The system of claim 9, wherein the platform further comprises a plurality of temperature control devices, at least one of the plurality of temperature control devices being associated with one of the plurality of independently controllable temperature zones. ### Claim 12 (depends on 11) The system of claim 11, wherein the plurality of temperature control devices each comprise a cooling element. ### Claim 13 (depends on 9) The system of claim 9, wherein the plurality of independently controllable temperature zones comprise a plurality of annular zones that extend concentrically from a center to a periphery of the substrate. ### Claim 14 (depends on 9) The system of claim 9, wherein the plurality of independently controllable temperature zones are arranged in a two-dimensional array. ### Claim 15 (depends on 9) The system of claim 9, wherein the beam conditioning assembly comprises: an orthogonal frequency division multiplex (OFDM) device configured to provide a plurality of beams each having a different wavelength; a beam selector configured to select the one or more wavelengths; and a first multiple input multiple output (MIMO) device comprising a plurality of antennas configured to direct the selected one or more wavelengths as a beam to scan a surface of the substrate and receive the one or more reflected wavelengths. ### Claim 16 (depends on 9) The system of claim 9, wherein the laser device comprises: a plurality of laser beams; and a second multiple input multiple output (MIMO) device comprising a plurality of antennas configured to direct the plurality of laser beams to a plurality of regions of the substrate to heat up the plurality of regions of the substrate. ### Claim 17 (depends on 9) The system of claim 9, further comprising a controller configured to control the laser device based on the comparison result. ### Claim 18 (depends on 9) The system of claim 9, wherein the device is configured to train and validate an algorithm model for a depth prediction based on a phase difference between the one or more wavelengths and the one or more reflected wavelengths. ### Claim 19 A semiconductor processing system comprising: a process chamber configured to perform at least one process on a substrate, wherein the process chamber comprises: a beam conditioning assembly configured to output one or more wavelengths; an off-axis parabolic mirror configured to direct the one or more wavelengths to a region of the substrate and receive one or more reflected wavelengths from the region of the substrate; a platform configured to support the substrate, the platform comprising a plurality of independently controllable temperature zones; and a laser device configured to direct a laser beam to the region of the substrate and change a temperature of the region of the substrate; and a device configured to process the one or more reflected wavelengths to predict, using a machine learning model, a process variable and compare the predicted process variable with a predetermined process variable to obtain a comparison result, wherein the temperature of the region is changed by the laser device in response to the comparison result. ### Claim 20 (depends on 19) The semiconductor processing system of claim 19, wherein the beam conditioning assembly comprises: an orthogonal frequency division multiplex (OFDM) device configured to provide a plurality of beams each having a different wavelength; a beam selector configured to select the one or more wavelengths; and a first multiple input multiple output (MIMO) device comprising a plurality of antennas configured to direct the selected one or more wavelengths as a beam to scan a surface of the substrate and receive the one or more reflected wavelengths.