# US 12,218,002 B2 · Semiconductor device

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 12,218,002 B2
- Document ID: US12218002B2
- Status: Granted
- Kind: B2
- Application number: 18/537,896
- Filed: 2023-12-13
- Published: 2024-04-04
- Granted: 2025-02-04
- Earliest claimed: 2019-07-17
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Sung Jin Kang; Jong Min Baek; Woo Kyung You; Kyu-Hee Han; Han Seong Kim; Jang Ho Lee; Sang Shin Jang
- Web page: https://patentgrep.com/patent/US12218002B2

## CPC

- H10W 20/085: {involving intermediate temporary filling with material}
- H10W 20/498: {Resistive arrangements or effects of, or between, wiring layers}
- H10W 20/077: {on sidewalls or on top surfaces of conductors (H10W20/076 takes precedence)}
- H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
- H10W 20/47: comprising two or more dielectric layers having different properties, e.g. different dielectric constants
- H10W 20/075: {of multilayered thin functional dielectric layers}
- H10W 20/082: {the openings being tapered via holes}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device including a first interlayer insulating film; a conductive pattern in the first interlayer insulating film; a resistance pattern on the conductive pattern; an upper etching stopper film spaced apart from the resistance pattern, extending in parallel with a top surface of the resistance pattern, and including a first metal; a lower etching stopper film on the conductive pattern, extending in parallel with a top surface of the first interlayer insulating film, and including a second metal; and a second interlayer insulating film on the upper etching stopper film and the lower etching stopper film, wherein a distance from a top surface of the second interlayer insulating film to a top surface of the upper etching stopper film is smaller than a distance from the top surface of the second interlayer insulating film to a top surface of the lower etching stopper film.

## Claims

### Claim 1

A semiconductor device, comprising:
a first interlayer insulating film;
a first connecting wire in the first interlayer insulating film;
a lower etching stopper film on the first interlayer insulating film;
a resistance pattern on the lower etching stopper film;
a first etching stopper film on the lower etching stopper film, the first etching stopper film extending parallel to a top surface of the first interlayer insulating film;
a second etching stopper film spaced apart from the resistance pattern, the second etching stopper film extending parallel to a top surface of the resistance pattern;
a third etching stopper film connecting the first etching stopper film and the second etching stopper film;
an upper etching stopper film between the resistance pattern and the second etching stopper film;
a second interlayer insulating film on the first etching stopper film and the second etching stopper film;
a first wire via trench exposing the first connecting wire through the first etching stopper film and the lower etching stopper film;
a resistance via trench exposing the resistance pattern through the second etching stopper film and the upper etching stopper film;
a first wire via filling the first wire via trench; and
a resistance via filling the resistance via trench,
wherein:
the first wire via and the resistance via include a barrier film extending along sidewalls and a bottom of the first wire via trench and sidewalls and a bottom of the resistance via trench,
the barrier film includes a first region in contact with the second etching stopper film and a second region in contact with the second interlayer insulating film, and
a profile of a sidewall of the first region is different from a profile of a sidewall of the second region.

### Claim 2 (depends on 1)

The semiconductor device as claimed in claim 1, wherein a slope of the sidewall of the first region is different from a slope of the sidewall of the second region.

### Claim 3 (depends on 1)

The semiconductor device as claimed in claim 1, wherein a part of the barrier film penetrates into the second etching stopper film.

### Claim 4 (depends on 1)

The semiconductor device as claimed in claim 1, wherein a part of the first region is in contact with the second interlayer insulating film.

### Claim 5 (depends on 1)

The semiconductor device as claimed in claim 1, further comprising:
a second connecting wire filling a second connecting wire via trench, the second connecting wire being connected to at least one of the first wire via and the resistance via,
wherein the barrier film further extends along sidewalls and a bottom surface of the second connecting wire via trench.

### Claim 6 (depends on 1)

The semiconductor device as claimed in claim 1, further comprising:
a filling film on the barrier film.

### Claim 7 (depends on 6)

The semiconductor device as claimed in claim 6, wherein in a case in which the filling film includes copper (Cu), the filling film further includes at least one of carbon (C), silver (Ag), Co, Ta, indium (In), tin (Sn), zinc (Zn), manganese (Mn), Ti, magnesium (Mg), chromium (Cr), germanium (Ge), strontium (Sr), Pt, Al, or Zr.

### Claim 8

A semiconductor device, comprising:
a first interlayer insulating film;
a first connecting wire in the first interlayer insulating film;
a lower etching stopper film on the first interlayer insulating film;
an upper etching stopper film on the lower etching stopper film;
a resistance pattern between the lower etching stopper film and upper etching stopper film;
an etching stopper film structure disposed on the lower etching stopper film, the resistance pattern, and the upper etching stopper film;
a second interlayer insulating film on the etching stopper film structure;
a first wire via in the second interlayer insulating film, the first wire via being connected to the first connecting wire and passing through the lower etching stopper film;
a first resistance via in the second interlayer insulating film, the first resistance via being connected to an upper surface of the resistance pattern and passing through the upper etching stopper film; and
a second connecting wire on the first wire via and the first resistance via, the second connecting wire being connected to at least one of the first wire via and the first resistance via,
wherein:
the etching stopper film structure includes a first portion overlapping the upper surface of the resistance pattern, and a second portion disposed on sidewalls of the resistance pattern, and
a thickness of the first portion is different from a thickness of the second portion.

### Claim 9 (depends on 8)

The semiconductor device as claimed in claim 8, wherein:
the thickness of the first portion is greater than the thickness of the second portion.

### Claim 10 (depends on 8)

The semiconductor device as claimed in claim 8, wherein:
the etching stopper film structure further includes a third portion that does not overlap the upper surface of the resistance pattern, and
the thickness of the first portion is the same as a thickness of the third portion.

### Claim 11 (depends on 8)

The semiconductor device as claimed in claim 8, wherein:
the etching stopper film structure further includes:
a first etching stopper film on the lower etching stopper film, the first etching stopper film extending parallel to a top surface of the first interlayer insulating film,
a second etching stopper film spaced apart from the resistance pattern, the second etching stopper film extending parallel to a top surface of the resistance pattern, and
a third etching stopper film connecting the first etching stopper film and the second etching stopper film.

### Claim 12 (depends on 11)

The semiconductor device as claimed in claim 11, wherein:
a thickness of the second etching stopper film is greater than a thickness of the third etching stopper film, and
the thickness of the second etching stopper film is the same as a thickness of the first etching stopper film.

### Claim 13

A semiconductor device, comprising:
a first interlayer insulating film;
a first connecting wire in the first interlayer insulating film;
a lower etching stopper film on the first interlayer insulating film;
a resistance pattern on the lower etching stopper film;
a first etching stopper film on the first connecting wire, the first etching stopper film extending parallel to a top surface of the first interlayer insulating film;
a second etching stopper film spaced apart from the resistance pattern, the second etching stopper film extending parallel to a top surface of the resistance pattern;
a third etching stopper film connecting the first etching stopper film and the second etching stopper film;
an upper etching stopper film between the resistance pattern and the second etching stopper film;
a second interlayer insulating film on the first etching stopper film and the second etching stopper film;
a first wire via in the second interlayer insulating film, the first wire via being connected to the first connecting wire and passing through the lower etching stopper film and the first etching stopper film;
a first resistance via in the second interlayer insulating film, the first resistance via being connected to the resistance pattern and passing through the upper etching stopper film and the second etching stopper film; and
a second connecting wire on the first wire via and the first resistance via, the second connecting wire being connected to at least one of the first wire via and the first resistance via,
wherein first etching stopper film includes a first part extending between the resistance pattern and the first interlayer insulating film and overlapping the resistance pattern and a second part that does not overlap with the resistance pattern.

### Claim 14 (depends on 13)

The semiconductor device as claimed in claim 13, wherein the lower etching stopper film is disposed between the first part and the second part.

### Claim 15 (depends on 13)

The semiconductor device as claimed in claim 13, wherein the first part is not in contact with the resistance pattern.

### Claim 16 (depends on 13)

The semiconductor device as claimed in claim 13, wherein the first part and the second part contain different materials.

### Claim 17 (depends on 13)

The semiconductor device as claimed in claim 13, wherein the first part extends between the resistance pattern and the lower etching stopper film.

### Claim 18 (depends on 13)

The semiconductor device as claimed in claim 13, wherein the first part is in contact with the resistance pattern.

### Claim 19 (depends on 13)

The semiconductor device as claimed in claim 13, wherein a thickness of the second etching stopper film overlapping a top surface of the resistance pattern is smaller than a thickness of the first etching stopper film that does not overlap the top surface of the resistance pattern.

### Claim 20 (depends on 13)

The semiconductor device as claimed in claim 13, wherein a thickness of the second etching stopper film overlapping a top surface of the resistance pattern is the same as a thickness of the first etching stopper film that does not overlap the top surface of the resistance pattern.