# US 12,217,994 B2 · Electrostatic chuck device and sleeve for electrostatic chuck device

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- Number: US 12,217,994 B2
- Document ID: US12217994B2
- Status: Granted
- Kind: B2
- Application number: 17/911,440
- Filed: 2021-03-05
- Published: 2023-04-13
- Granted: 2025-02-04
- Earliest claimed: 2020-03-26
- Assignees: Tomoegawa Co., Ltd.
- Applicants: Tomoegawa Co., Ltd.
- Inventors: Nobuyoshi Yamazaki
- Web page: https://patentgrep.com/patent/US12217994B2

## CPC

- H10P 72/722: {Details of electrostatic chucks}
- H10P 72/7616: {characterised by a coating, a hardness or a material}
- H10P 72/7624: {characterised by the mechanical construction of the susceptor, stage or support}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

An electrostatic chuck device containing a substrate, a stack stacked on an upper surface of the substrate in the thickness direction, and a ceramic layer stacked on an upper surface of the stack in the thickness direction. A sleeve formed from an insulating material is inserted into a through-hole that penetrates through the substrate and the stack in the thickness direction. The upper surface of the sleeve in the thickness direction has a two-level structure including a first upper surface positioned on the same plane as an upper surface of the substrate in the thickness direction, and a second upper surface positioned above the first upper surface in the thickness direction of the sleeve and disposed proximate to the ceramic layer. In a plan view, an edge portion of the stack is disposed on top of the first upper surface.

## Claims

### Claim 1

An electrostatic chuck device comprising:
a substrate,
a stack containing at least an internal electrode stacked on top of the substrate,
a ceramic layer stacked on an upper surface of the stack in a thickness direction,
a through-hole penetrating through the substrate and the stack in the thickness direction,
a sleeve formed from an insulating material and inserted in the through-hole, an upper surface of the sleeve in the thickness direction including a two-level structure having a first upper surface positioned coplanar with an upper surface of the substrate in the thickness direction, and a second upper surface positioned above the first upper surface in the thickness direction and disposed proximate to the ceramic layer, an edge portion of the stack in a plan view being disposed on top of the first upper surface,
wherein a space between an outside surface of the edge portion and an outside surface between the first upper surface and the second upper surface is either (i) filled with a filler or (ii) left as a void.

### Claim 2 (depends on 1)

The electrostatic chuck device according to claim 1, wherein the ceramic layer has a base layer, and a surface layer having unevenness formed on an upper surface of the base layer in a thickness direction.

### Claim 3 (depends on 1)

The electrostatic chuck device according to claim 1, wherein the edge portion defines a length in a horizontal direction between 10% and 90% of a distance from the outside surface between the first upper surface and the second upper surface to an outside edge of the first upper surface.

### Claim 4 (depends on 1)

The electrostatic chuck device according to claim 1, wherein the edge portion defines a length in a horizontal direction between 35% and 75% of a distance from the outside surface between the first upper surface and the second upper surface to an outside edge of the first upper surface.