# US 12,217,989 B2 · Semiconductor apparatus and method of collecting residues > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,217,989 B2 - Document ID: US12217989B2 - Status: Granted - Kind: B2 - Application number: 17/395,435 - Filed: 2021-08-05 - Published: 2023-02-09 - Granted: 2025-02-04 - Earliest claimed: 2021-08-05 - Assignees: Taiwan Semiconductor Manufacturing Company, Ltd. - Applicants: Taiwan Semiconductor Manufacturing Company, Ltd. - Inventors: Ping-Cheng Lin; Pin-Yi Hsin; Ching Shun Lee; Bo-Han Huang; Cheng-tsung Tu - Web page: https://patentgrep.com/patent/US12217989B2 ## CPC - H10P 72/14: {Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls} - H01J 37/32715: {Workpiece holder} - H10P 72/0402: {Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence)} - H10P 72/0436: {mainly by radiation} - H10P 72/0462: {characterised by the construction of the processing chambers, e.g. modular processing chambers} - H10P 72/12: {Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements} - H10P 72/16: {Trays for chips} - H10P 72/3312: {Vertical transfer of a batch of workpieces} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) ## Abstract A semiconductor apparatus and a method for collecting residues of curable material are provided. The semiconductor apparatus includes a chamber containing a wafer cassette, and a collecting module disposed in the chamber for collecting residues of curable material in the chamber. The collecting module includes a flow-directing structure disposed below a ceiling of the chamber, a baffle structure disposed below the flow-directing structure, and a tray disposed on the wafer cassette. The flow-directing structure includes a first hollow region, the baffle structure includes a second hollow region, and the tray is moved together with the wafer cassette to pass through the second hollow region of the baffle structure and is positioned to cover the first hollow region of the flow-directing structure. ## Claims ### Claim 1 A semiconductor apparatus, comprising: a chamber containing a wafer cassette; and a collecting module disposed in the chamber for collecting residues of curable material in the chamber, and the collecting module comprising: a flow-directing structure disposed below a ceiling of the chamber and comprising a first hollow region; a baffle structure disposed below the flow-directing structure and comprising a second hollow region; and a tray disposed on the wafer cassette and being moved together with the wafer cassette to pass through the second hollow region of the baffle structure and be positioned to cover the first hollow region of the flow-directing structure. ### Claim 2 (depends on 1) The semiconductor apparatus of claim 1, wherein the flow-directing structure comprises a slanted surface having a slope toward the first hollow region to direct the residues of curable material toward the tray. ### Claim 3 (depends on 1) The semiconductor apparatus of claim 1, wherein the tray comprises a collecting surface facing the flow-directing structure, and a maximum lateral dimension of the collecting surface of the tray is greater than a maximum lateral dimension of the first hollow region of the flow-directing structure. ### Claim 4 (depends on 1) The semiconductor apparatus of claim 1, wherein a maximum lateral dimension of the baffle structure is greater than a maximum lateral dimension of the flow-directing structure. ### Claim 5 (depends on 4) The semiconductor apparatus of claim 4, wherein the baffle structure comprises a collecting surface encircling the second hollow region and below an outer sidewall of the flow-directing structure to collect the residues of curable material dripping from the outer sidewall of the flow-directing structure. ### Claim 6 (depends on 1) The semiconductor apparatus of claim 1, wherein a maximum lateral dimension of the second hollow region of the baffle structure is greater than a maximum lateral dimension of the tray. ### Claim 7 (depends on 1) The semiconductor apparatus of claim 1, wherein the tray comprises a bottom surface facing the wafer cassette, and a sidewall extension extending around the bottom surface. ### Claim 8 (depends on 1) The semiconductor apparatus of claim 1, wherein the tray comprises a maximum lateral dimension greater than the wafer cassette to shield the wafer cassette. ### Claim 9 (depends on 1) The semiconductor apparatus of claim 1, wherein a shape of the tray is substantially complementary to that of the second hollow region of the baffle structure. ### Claim 10 A semiconductor apparatus, comprising: a chamber containing a wafer cassette; and a collecting module disposed in the chamber for collecting residues of curable material, and the collecting module comprising: a flow-directing structure mounted on an upper portion of the chamber, the flow-directing structure comprising a central opening and a slanted surface sloped to direct the residues of curable material toward the central opening; a baffle ring mounted on a lower portion of the chamber; and a tray shielding the wafer cassette and being movable together with the wafer cassette between the flow-directing structure and the baffle ring. ### Claim 11 (depends on 10) The semiconductor apparatus of claim 10, wherein the tray comprises a collecting surface facing the flow-directing structure and covering the central opening of the flow-directing structure. ### Claim 12 (depends on 10) The semiconductor apparatus of claim 10, wherein the baffle ring is wider than the flow-directing structure, an outer sidewall of the flow-directing structure is above a collecting surface of the baffle ring. ### Claim 13 (depends on 10) The semiconductor apparatus of claim 10, wherein the baffle ring is wider than the tray to allow the wafer cassette and the tray mounted on the wafer cassette to pass through the baffle ring. ### Claim 14 (depends on 10) The semiconductor apparatus of claim 10, wherein the tray mounted on the wafer cassette comprises a bottom surface and a sidewall extension extending around the bottom surface. ### Claim 15 (depends on 10) The semiconductor apparatus of claim 10, wherein the tray comprises a shape substantially matching a complementary shape of the central opening of the baffle structure. ### Claim 16 A semiconductor apparatus, comprising: a chamber containing a wafer cassette; and a collecting module disposed in the chamber and comprising: a flow-directing structure disposed at a top side of the chamber, the flow-directing structure comprising a hollow region and a slanted surface, the slanted surface directing residues of curable material toward the hollow region; a tray disposed on the wafer cassette, the tray receiving the residues of the curable material dripping from the flow-directing structure; and a baffle ring disposed at a bottom side of the chamber. ### Claim 17 (depends on 16) The semiconductor apparatus of claim 16, wherein the baffle ring is wider than the tray to allow the wafer cassette and the tray to pass through the baffle ring. ### Claim 18 (depends on 16) The semiconductor apparatus of claim 16, wherein the tray comprises a collecting surface for receiving the residues of the curable material, and a maximum lateral dimension of the collecting surface of the tray is greater than a maximum lateral dimension of the hollow region of the flow-directing structure. ### Claim 19 (depends on 16) The semiconductor apparatus of claim 16, wherein a maximum lateral dimension of the baffle ring is greater than a maximum lateral dimension of the flow-directing structure. ### Claim 20 (depends on 16) The semiconductor apparatus of claim 16, wherein the tray comprises a bottom surface and a sidewall extension, the bottom surface faces the wafer cassette, and the sidewall extension is disposed along a boundary of the bottom surface and extends toward the wafer cassette.