# US 12,217,974 B2 · Localized stress modulation by implant to back of wafer > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,217,974 B2 - Document ID: US12217974B2 - Status: Granted - Kind: B2 - Application number: 17/396,101 - Filed: 2021-08-06 - Published: 2022-10-27 - Granted: 2025-02-04 - Earliest claimed: 2021-04-26 - Assignees: Applied Materials, Inc. - Applicants: Applied Materials, Inc. - Inventors: Sony Varghese; Pradeep Subrahmanyan; Dennis Rodier; Kyuha Shim - Web page: https://patentgrep.com/patent/US12217974B2 ## CPC - H10P 30/40: into insulating materials - H01J 37/1474: {Scanning means} - H01J 37/304: Controlling tubes by information coming from the objects {or from the beam}, e.g. correction signals - H01J 37/3171: {for ion implantation} - H10P 50/00: Etching of wafers, substrates or parts of devices - H10P 74/203: {Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects} - H01J 2237/24585: Other variables, e.g. energy, mass, velocity, time, temperature - H10P 14/69433: {the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) ## Abstract Embodiments herein are directed to localized stress modulation by implanting a first side of a substrate to reduce in-plane distortion along a second side of the substrate. In some embodiments, a method may include providing a substrate, the substrate comprising a first main side opposite a second main side, wherein a plurality of features are disposed on the first main side, performing a metrology scan to the first main side to determine an amount of distortion to the substrate due to the formation of the plurality of features, and depositing a stress compensation film along the second main side of the substrate, wherein a stress and a thickness of the stress compensation film is determined based on the amount of distortion to the substrate. The method may further include directing ions to the stress compensation film in an ion implant procedure. ## Claims ### Claim 1 A method, comprising: providing a substrate, the substrate comprising a first main side opposite a second main side, wherein a plurality of film layers are disposed on the first main side and the second main side; performing a metrology scan to determine an amount of distortion to the substrate due to formation of the plurality of film layers; removing the plurality of film layers from the second main side of the substrate; depositing a stress compensation film along the second main side of the substrate, wherein a stress and a thickness of the stress compensation film are determined based on the amount of distortion to the substrate, and wherein the thickness varies across the stress compensation film; and directing ions to the stress compensation film in an ion implant procedure. ### Claim 2 (depends on 1) The method of claim 1, wherein the metrology scan generates a topography map of the first main side of the substrate, and wherein the topography map is characterized by a plurality of coordinates and stress information correlated to each of the plurality of coordinates. ### Claim 3 (depends on 2) The method of claim 2, further comprising modifying, based on the stress information, a dose and an energy of the ions directed to the stress compensation film. ### Claim 4 (depends on 1) The method of claim 1, wherein the amount of distortion to the substrate is calculated based on first order bow correction information. ### Claim 5 (depends on 1) The method of claim 1, further comprising forming a second stress compensation film over the stress compensation film. ### Claim 6 (depends on 1) The method of claim 1, wherein the implant procedure comprises scanning a spot beam or a ribbon beam across the stress compensation film along a first direction and a second direction. ### Claim 7 (depends on 1) The method of claim 1, further comprising performing a second metrology scan to the first main side to determine a change in the amount of distortion to the substrate. ### Claim 8 A method, comprising: providing a substrate including a first main side opposite a second main side, wherein a plurality of film layers are disposed on the first main side and the second main side; performing a metrology scan to the first main side to determine an amount of distortion to the substrate due to formation of the plurality of film layers; removing the plurality of film layers from the second main side of the substrate; depositing a stress compensation film along the second main side of the substrate, wherein a stress and a thickness of the stress compensation film are determined based on the amount of distortion to the substrate, and wherein the stress or the thickness of the stress compensation film varies between two different locations along the second main side; and directing ions to the stress compensation film in an ion implant procedure. ### Claim 9 (depends on 8) The method of claim 8, wherein the metrology scan generates a topography map of the first main side of the substrate, and wherein the topography map is characterized by a plurality of coordinates and stress information correlated to each of the plurality of coordinates. ### Claim 10 (depends on 9) The method of claim 9, further comprising modifying, based on the stress information and the thickness of the stress compensation film, a dose and an energy of the ions directed to the stress compensation film. ### Claim 11 (depends on 8) The method of claim 8, wherein the amount of distortion to the substrate is calculated based on first order bow correction information. ### Claim 12 (depends on 8) The method of claim 8, further comprising forming a second stress compensation film over the stress compensation film. ### Claim 13 (depends on 8) The method of claim 8, wherein the ion implant procedure comprises scanning a spot beam or a ribbon beam across the stress compensation film along a first direction and a second direction. ### Claim 14 (depends on 8) The method of claim 8, further comprising performing a second metrology scan to the first main side to determine a change in the amount of distortion to the substrate.