# US 12,217,970 B2 · Plasma etching method using perfluoropropyl carbinol

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- Number: US 12,217,970 B2
- Document ID: US12217970B2
- Status: Granted
- Kind: B2
- Application number: 17/923,495
- Filed: 2021-03-02
- Published: 2023-06-22
- Granted: 2025-02-04
- Earliest claimed: 2020-05-07
- Assignees: Ajou University Industry-Academic Cooperation Foundation
- Applicants: Ajou University Industry-Academic Cooperation Foundation
- Inventors: Chang-Koo Kim; Jun-Hyun Kim
- Web page: https://patentgrep.com/patent/US12217970B2

## CPC

- H10P 50/283: {by chemical means}
- H01J 37/32: Gas-filled discharge tubes (heating by discharge H05B)
- H01J 37/32449: {Gas control, e.g. control of the gas flow}
- H01J 37/32724: {Temperature}
- H10P 14/69215: {the material being a silicon oxide, e.g. SiO2}
- H10P 50/73: {using masks for insulating materials}
- H01J 2237/3341: Reactive etching
- Y02C 20/30: of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- Y02C: CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

Disclosed is a plasma etching method. The plasma etching method comprises: a first step for evaporating liquid perfluoropropyl carbinol (PPC); a second step for supplying a discharge gas including the evaporated PPC and argon gas to a plasma chamber in which an object to be etched is arranged; and a third step for discharging the discharge gas to generate plasma, and using the plasma to plasma-etch the object to be etched.

## Claims

### Claim 1

A plasma etching method comprising:
a first step of vaporizing liquid perfluoropropyl carbinol (PPC);
a second step of supplying a discharge gas containing the vaporized perfluoropropyl carbinol (PPC) and argon gas to a plasma chamber in which an etching target is disposed; and
a third step of discharging the discharge gas to generate plasma and of performing plasma etching on the etching target using the generated plasma.

### Claim 2 (depends on 1)

The method of claim 1, wherein in order to vaporize the liquid perfluoropropyl carbinol (PPC) and then supply the vaporized perfluoropropyl carbinol (PPC) to the etching chamber, a first container accommodating the liquid perfluoropropyl carbinol (PPC) therein is heated to a first temperature equal to or higher than a boiling point of the perfluoropropyl carbinol (PPC), and a connecting pipe connecting the first container to the etching chamber is heated to a second temperature higher than the first temperature.

### Claim 3 (depends on 1)

The method of claim 1, wherein the vaporized perfluoropropyl carbinol (PPC) and the argon gas are supplied to the etching chamber at a flow rate ratio in a range of 2:3 to 1:9.

### Claim 4 (depends on 1)

The method of claim 1, wherein the vaporized perfluoropropyl carbinol (PPC) and the argon gas are supplied to the etching chamber at a flow rate ratio in a range of 2:3 to 1:4.

### Claim 5 (depends on 4)

The method of claim 4, wherein the vaporized perfluoropropyl carbinol (PPC) and the argon gas are supplied to the etching chamber at a flow rate ratio in a range of 23:67 to 1:4.

### Claim 6 (depends on 5)

The method of claim 5, wherein the vaporized perfluoropropyl carbinol (PPC) and the argon gas are supplied to the etching chamber at a flow rate ratio in a range of 3:7 to 1:4.

### Claim 7 (depends on 1)

The method of claim 1, wherein the discharge gas further contains oxygen.

### Claim 8 (depends on 7)

The method of claim 7, wherein the perfluoropropyl carbinol (PPC) gas, the argon gas and the oxygen are supplied to the etching chamber so that a ratio of a flow rate of the oxygen and a sum of a flow rate of the perfluoropropyl carbinol (PPC) gas and the flow rate of the argon gas is in a range of 1:3 to 1:99.

### Claim 9 (depends on 1)

The method of claim 1, wherein a bias voltage in a range of −200V to −1400V is applied to a substrate supporting the etching target thereon in the etching chamber during the third step.

### Claim 10 (depends on 9)

The method of claim 9, wherein a source power in a range of 200 W to 1000 W is applied to a plasma source coupled to the etching chamber to generate plasma of the discharge gas during the third step.

### Claim 11 (depends on 1)

The method of claim 1, wherein the etching target is a silicon oxide thin film.