# US 12,217,967 B2 · Indium phosphide substrate

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- Number: US 12,217,967 B2
- Document ID: US12217967B2
- Status: Granted
- Kind: B2
- Application number: 17/600,226
- Filed: 2020-12-23
- Published: 2022-06-30
- Granted: 2025-02-04
- Earliest claimed: 2020-01-29
- Assignees: JX Advanced Metals Corporation
- Applicants: Jx Advanced Metals Corporation
- Inventors: Shunsuke Oka; Kenji Suzuki; Hideaki Hayashi
- Web page: https://patentgrep.com/patent/US12217967B2

## CPC

- H10P 52/00: Grinding, lapping or polishing of wafers, substrates or parts of devices
- C30B 29/40: AIIIBV compounds {wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi}
- H10P 90/123: {by grinding or lapping}
- H10P 90/124: {by processing the backside of the wafers}
- H10P 90/126: {by chemical etching}
- H10P 90/128: {by edge treatment, e.g. chamfering}
- H10P 90/129: {by polishing}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR

## Abstract

Provided is an indium phosphide substrate which has suppressed sharpness of a wafer edge when polishing is carried out from the back surface of the wafer by a method such as back lapping. An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in a wafer, the phosphide substrate has an angle θ on the main surface side of 0°<θ≤110° for all of the planes A where a distance from the main surface is 100 μm or more and 200 μm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an wafer edge with each of the planes A and being tangent to the wafer edge, and an plane of each of the planes A extending in a wafer outside direction, and wherein in a cross section orthogonal to the wafer edge, the indium phosphide substrate has an edge round at least on the main surface side, and the edge round on the main surface side has a radius of curvature Rf of from 200 to 350 μm.

## Claims

### Claim 1

An indium phosphide substrate,
wherein when planes A each parallel to a main surface are taken in the indium phosphide substrate, the indium phosphide substrate has an angle θ on a main surface side of 0°<θ≤110° for each of the planes A where a distance from the main surface to each of the planes A is 100 μm or more and 200 μm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an edge of the indium phosphide substrate with each of the planes A and being tangent to the edge, and a plane of each of the planes A extending in an outside direction of the indium phosphide substrate, and
wherein in a cross section orthogonal to the edge, the indium phosphide substrate has an edge round at least on the main surface side, and the edge round on the main surface side has a radius of curvature Rf of 223 to 350 μm,
a chamfered width from the edge on the main surface side of the wafer indium phosphide substrate is in the range of 50 to 95 μm,
the edge includes a straight portion smoothly connected to the edge round and along a thickness direction of the indium phosphide substrate.

### Claim 2 (depends on 1)

The indium phosphide substrate according to claim 1, wherein each of the angles θ is 60°≤θ≤100° for all of the planes A where the distance from the main surface is 100 μm or more and 200 μm or less.

### Claim 3

An indium phosphide substrate,
wherein when planes A each parallel to a main surface are taken in the indium phosphide substrate, the indium phosphide substrate has an angle θ on a main surface side of 0°<θ≤100° for each of the planes A where a distance from the main surface to each of the planes A is 150 μm or more and 200 μm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an edge of the indium phosphide substrate with each of the planes A and being tangent to the edge, and a plane of each of the planes A extending in an outside direction of the indium phosphide substrate, and
wherein in a cross section orthogonal to the edge, the indium phosphide substrate has an edge round at least on the main surface side, and the edge round on the main surface side has a radius of curvature Rf of 223 to 350 μm,
a chamfered width from the edge on the main surface side of the indium phosphide substrate is in the range of 50 to 95 μm,
the edge includes a straight portion smoothly connected to the edge round and along a thickness direction of the indium phosphide substrate.

### Claim 4 (depends on 3)

The indium phosphide substrate according to claim 3, wherein each of the angles θ is 60°≤θ≤95° for all of the planes A where the distance from the main surface is 150 μm or more and 200 μm or less.

### Claim 5

An indium phosphide substrate,
wherein when planes A each parallel to a main surface are taken in the indium phosphide substrate, the indium phosphide substrate has an angle θ on a main surface side of 60°≤θ≤90° for each of the planes A where a distance from the main surface to each of the planes A is 100 μm or more and 200 μm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an edge of the indium phosphide substrate with each of the planes A and being tangent to the edge, and a plane of each of the planes A extending in an outside direction of the indium phosphide substrate,
wherein in a cross section orthogonal to the edge, the indium phosphide substrate has an edge round at least on the main surface side, and the edge round on the main surface side has a radius of curvature Rf of 223 to 350 μm; and
wherein the indium phosphide substrate has a diameter of 50.8 mm or less,
a chamfered width from the edge on the main surface side of the wafer indium phosphide substrate is in the range of 50 to 95 μm,
the edge includes a straight portion smoothly connected to the edge round and along a thickness direction of the indium phosphide substrate.

### Claim 6 (depends on 5)

The indium phosphide substrate according to claim 5, wherein each of the angles θ is 60°≤θ≤90° for all of the planes A where the distance from the main surface is 150 μm or more and 200 μm or less.

### Claim 7

An indium phosphide substrate,
wherein when planes A each parallel to a main surface are taken in the indium phosphide substrate, the indium phosphide substrate has an angle θ on a main surface side of 80°≤θ≤110° for each of the planes A where a distance from the main surface to each of the planes A is 100 μm or more and 200 μm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an edge of the indium phosphide substrate with each of the planes A and being tangent to the edge, and a plane of each of the planes A extending in an outside direction of the indium phosphide substrate,
wherein in a cross section orthogonal to the edge, the indium phosphide substrate has an edge round at least on the main surface side, and the edge round on the main surface side has a radius of curvature Rf of 223 to 350 μm; and
wherein the indium phosphide substrate has a diameter of 76.2 mm or less,
a chamfered width from the edge on the main surface side of the indium phosphide substrate is in the range of 50 to 95 μm,
the edge includes a straight portion smoothly connected to the edge round and along a thickness direction of the indium phosphide substrate.

### Claim 8 (depends on 7)

The indium phosphide substrate according to claim 7, wherein each of the angles θ is 80°≤θ≤100° for all of the planes A where the distance from the main surface is 150 μm or more and 200 μm or less.

### Claim 9

An indium phosphide substrate,
wherein when planes A each parallel to a main surface are taken in the indium phosphide substrate, the indium phosphide substrate has an angle θ on a main surface side of 80°≤θ≤100° for each of the planes A where a distance from the main surface to each of the planes A is 100 μm or more and 200 μm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an edge of the indium phosphide substrate with each of the planes A and being tangent to the edge, and a plane of each of the planes A extending in an outside direction of the indium phosphide substrate,
wherein in a cross section orthogonal to the edge, the indium phosphide substrate has an edge round at least on the main surface side, and the edge round on the main surface side has a radius of curvature Rf of 223 to 350 μm; and
wherein the indium phosphide substrate has a diameter of 100 mm or less,
a chamfered width from the edge on the main surface side of the indium phosphide substrate is in the range of 50 to 95 μm,
the edge includes a straight portion smoothly connected to the edge round and along a thickness direction of the indium phosphide substrate.

### Claim 10 (depends on 9)

The indium phosphide substrate according to claim 9, wherein each of the angles θ is 80°≤θ≤95° for all of the planes A where the distance from the main surface is 150 μm or more and 200 μm or less.

### Claim 11 (depends on 1)

The indium phosphide substrate according to claim 1, wherein the radius of curvature Rf of the edge round on the main surface side is from 303 to 338 μm.