# US 12,217,959 B2 · Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,217,959 B2 - Document ID: US12217959B2 - Status: Granted - Kind: B2 - Application number: 16/115,179 - Filed: 2018-08-28 - Published: 2018-12-20 - Granted: 2025-02-04 - Earliest claimed: 2016-02-29 - Assignees: Kokusai Electric Corporation - Applicants: Kokusai Electric Corporation - Inventors: Kimihiko Nakatani; Tsukasa Kamakura; Hajime Karasawa; Kazuhiro Harada - Web page: https://patentgrep.com/patent/US12217959B2 ## CPC - H10P 14/3411: {Silicon, silicon germanium or germanium} - C23C 16/30: Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides - C23C 16/325: {Silicon carbide} - C23C 16/36: Carbonitrides - C23C 16/45523: {Pulsed gas flow or change of composition over time} - C23C 16/45565: {Shower nozzles} - C23C 16/45578: {Elongated nozzles, tubes with holes} - C23C 16/4584: {the substrate being rotated} - C23C 16/52: Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} - H10P 14/24: using chemical vapour deposition [CVD] - H10P 14/3441: {Conductivity type} - H10P 14/60: of insulating materials - H10P 14/6338: {the reactions being activated by other means than plasma or thermal, e.g. photo-CVD} - H10P 14/6682: {the compound being a silane, e.g. disilane, methylsilane or chlorosilane} - H10P 14/6687: {the compound comprising silicon and nitrogen} - H10P 14/6905: {being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H} - H10P 76/405: {characterised by their composition, e.g. multilayer masks} - H10P 14/3408: {Silicon carbide} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract There is provided a technique that includes: forming a film on a substrate by performing, simultaneously at least for a predetermined period: supplying a first precursor to the substrate, the first precursor containing a chemical bond of a predetermined element and nitrogen or a chemical bond of the predetermined element and carbon, containing a chemical bond of the predetermined element and hydrogen, and not containing a chemical bond of nitrogen and hydrogen; and supplying a pseudo catalyst to the substrate, the pseudo catalyst containing a Group 13 element and not containing the chemical bond of nitrogen and hydrogen, wherein in the act of forming the film, a substance containing the chemical bond of nitrogen and hydrogen is not supplied to the substrate. ## Claims ### Claim 1 A method of processing a substrate, comprising: forming a film on the substrate by performing a cycle that includes: supplying a first precursor to the substrate in a process chamber, the first precursor being a substance represented by a structural formula of SinCmH2n+2m+2 or SinCmH2n+2m where n is a positive integer and m is a positive integer, and not containing a chemical bond of nitrogen and hydrogen; supplying a second precursor to the substrate in the process chamber, the second precursor differing in molecular structure from the first precursor, being a substance represented by a structural formula of SijH2j+2 where j is a positive integer, and not containing the chemical bond of nitrogen and hydrogen; and supplying a pseudo catalyst to the substrate in the process chamber, the pseudo catalyst being a substance represented by a structural formula of YZ3 where Y is a Group 13 element and Z is a functional group selected from the group of hydrogen, a halogen group, an alkyl group, an amino group, an alkoxy group, and a hydroxy group, and not containing the chemical bond of nitrogen and hydrogen, wherein in the act of forming the film, a substance containing the chemical bond of nitrogen and hydrogen is not supplied to the substrate, wherein in the act of supplying the first precursor, a temperature of the substrate is set to a first temperature at which the first precursor is not pyrolized when the first precursor exists alone, wherein in the act of supplying the second precursor, a temperature of the substrate is set to a second temperature at which the second precursor is not pyrolized when the second precursor exists alone, wherein in each cycle, the act of supplying the first precursor and the act of supplying the pseudo catalyst are alternately performed, wherein in each cycle, one among the first precursor and the pseudo catalyst, which has been supplied earlier than the other one among the first precursor and the pseudo catalyst, is contained in the process chamber without being removed from the process chamber until the other one is supplied, and wherein in each cycle, the other one among the first precursor and the pseudo catalyst, which has been supplied later, reacts with the one among the first precursor and the pseudo catalyst, which has been supplied earlier, to decompose a part of the pseudo catalyst. ### Claim 2 (depends on 1) The method according to claim 1, wherein the pseudo catalyst contains boron or aluminum as the Group 13 element. ### Claim 3 (depends on 1) The method according to claim 1, wherein in the act of forming the film, a pressure in a space in which the substrate exists is set to 1 Pa or higher and 600 Pa or lower. ### Claim 4 A method of manufacturing a semiconductor device, comprising: forming a film on a substrate for manufacturing the semiconductor device by performing a cycle that includes: supplying a first precursor to the substrate in a process chamber, the first precursor being a substance represented by a structural formula of SinCmH2n+2m+2 or SinCmH2n+2m where n is a positive integer and m is a positive integer, and not containing a chemical bond of nitrogen and hydrogen; supplying a second precursor to the substrate in the process chamber, the second precursor differing in molecular structure from the first precursor, being a substance represented by a structural formula of SijH2j+2 where j is a positive integer, and not containing the chemical bond of nitrogen and hydrogen; and supplying a pseudo catalyst to the substrate in the process chamber, the pseudo catalyst being a substance represented by a structural formula of YZ3 where Y is a Group 13 element and Z is a functional group selected from the group of hydrogen, a halogen group, an alkyl group, an amino group, an alkoxy group, and a hydroxy group, and not containing the chemical bond of nitrogen and hydrogen, wherein in the act of forming the film, a substance containing the chemical bond of nitrogen and hydrogen is not supplied to the substrate, wherein in the act of supplying the first precursor, a temperature of the substrate is set to a first temperature at which the first precursor is not pyrolized when the first precursor exists alone, wherein in the act of supplying the second precursor, a temperature of the substrate is set to a second temperature at which the second precursor is not pyrolized when the second precursor exists alone, wherein in each cycle, the act of supplying the first precursor and the act of supplying the pseudo catalyst are alternately performed, wherein in each cycle, one among the first precursor and the pseudo catalyst, which has been supplied earlier than the other one among the first precursor and the pseudo catalyst, is contained in the process chamber without being removed from the process chamber until the other one is supplied, and wherein in each cycle, the other one among the first precursor and the pseudo catalyst, which has been supplied later, reacts with the one among the first precursor and the pseudo catalyst, which has been supplied earlier, to decompose a part of the pseudo catalyst. ### Claim 5 (depends on 1) The method according to claim 1, wherein the second precursor includes a disilane or silicon hydride having a higher order than the disilane. ### Claim 6 (depends on 1) The method according to claim 1, wherein in the act of supplying the pseudo catalyst, a temperature of the substrate is set to a temperature at which the pseudo catalyst is not pyrolized when the pseudo catalyst exists alone. ### Claim 7 (depends on 1) The method according to claim 1, wherein the first precursor includes a substance acting as a Lewis base in the act of forming the film, and wherein the pseudo catalyst includes a substance acting as a Lewis acid, which acts on the substance acting as the Lewis base included in the first precursor to extract protons from the chemical bond of silicon and hydrogen contained in the first precursor, in the act of forming the film. ### Claim 8 (depends on 1) The method according to claim 1, wherein in the act of forming the film, the temperature of the substrate is set to 150 degrees C. or higher and 400 degrees C. or lower.