# US 12,217,956 B2 · Carbon film deposition method and deposition apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,217,956 B2 - Document ID: US12217956B2 - Status: Granted - Kind: B2 - Application number: 17/647,996 - Filed: 2022-01-14 - Published: 2022-08-04 - Granted: 2025-02-04 - Earliest claimed: 2021-02-04 - Assignees: Tokyo Electron Limited - Applicants: Tokyo Electron Limited - Inventors: Yosuke Watanabe; Shota Chida - Web page: https://patentgrep.com/patent/US12217956B2 ## CPC - C23C 16/0272: {Deposition of sub-layers, e.g. to promote the adhesion of the main coating} - H10P 14/6529: {by exposure to a gas or vapour} - C23C 16/26: Deposition of carbon only - C23C 16/342: {Boron nitride} - C23C 16/45534: {Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers} - C23C 16/56: After-treatment - H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD} - H10P 14/6506: {Formation of intermediate materials} - H10P 14/668: {the materials being characterised by the deposition precursor materials} - H10P 14/6902: {composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon} - H10P 72/0432: {mainly by conduction} - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A carbon film deposition method includes supplying a carbon-containing gas and a halogen gas to a substrate to deposit a carbon film on the substrate by using chemical vapor deposition, and supplying a gas that reacts with halogens constituting the halogen gas to reduce the halogens contained in the carbon film. A cycle including the supplying of the carbon-containing gas and the halogen gas and the supplying of the gas that reacts with the halogens is repeated a plurality of times. ## Claims ### Claim 1 A carbon film deposition method comprising: supplying a carbon-containing gas and a halogen gas to a substrate to deposit a carbon film on the substrate by using chemical vapor deposition; and supplying a gas that reacts with halogens constituting the halogen gas to reduce the halogens contained in the carbon film; wherein a cycle is repeated a plurality of times, the cycle including the supplying of the carbon-containing gas and the halogen gas and the supplying of the gas that reacts with the halogens. ### Claim 2 (depends on 1) The carbon film deposition method as claimed in claim 1, wherein the gas that reacts with the halogens is ammonia gas. ### Claim 3 (depends on 1) The carbon film deposition method as claimed in claim 1, wherein a number of the plurality of times is greater than or equal to 5. ### Claim 4 (depends on 1) The carbon film deposition method as claimed in claim 1, wherein the supplying of the carbon-containing gas and the halogen gas and the supplying of the gas that reacts with the halogens are performed under a temperature less than or equal to 400° C. ### Claim 5 (depends on 1) The carbon film deposition method as claimed in claim 1, wherein the halogen gas is a chlorine gas, a fluorine gas, a bromine gas, or an iodine gas. ### Claim 6 (depends on 1) The carbon film deposition method as claimed in claim 1, wherein the carbon-containing gas is a hydrocarbon-based gas. ### Claim 7 (depends on 6) The carbon film deposition method as claimed in claim 6, wherein the hydrocarbon-based gas is a C4H6 gas. ### Claim 8 (depends on 1) The carbon film deposition method as claimed in claim 1, further comprising supplying a purge gas to the substrate after the supplying of the carbon-containing gas and the halogen gas and before the supplying of the gas that reacts with the halogens, and after the supplying of the gas that reacts with the halogens and before the supplying of the carbon-containing gas and the halogen gas. ### Claim 9 (depends on 8) The carbon film deposition method as claimed in claim 8, wherein the purge gas is an inert gas. ### Claim 10 (depends on 9) The carbon film deposition method as claimed in claim 9, wherein the inert gas is nitrogen gas. ### Claim 11 (depends on 8) The carbon film deposition method as claimed in claim 8, wherein the supplying of the purge gas includes supplying the purge gas while an inside of a processing chamber where the substrate is provided is vacuumed. ### Claim 12 A carbon film deposition apparatus comprising: a processing chamber; a substrate holding member provided in the processing chamber; a process gas supply configured to supply a carbon-containing gas and a halogen gas to the substrate holding member; and a halogen reaction gas supply configured to supply a gas that reacts with halogens constituting the halogen gas.