# US 12,217,955 B2 · Method for etching features using a targeted deposition for selective passivation

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- Number: US 12,217,955 B2
- Document ID: US12217955B2
- Status: Granted
- Kind: B2
- Application number: 17/619,979
- Filed: 2020-07-01
- Published: 2022-09-22
- Granted: 2025-02-04
- Earliest claimed: 2019-07-03
- Assignees: Lam Research Corporation
- Applicants: Lam Research Corporation
- Inventors: Wenchi Liu; Zhongkui Tan; Juan Valdivia; Colin Richard Rementer; Qing Xu; Yoko Yamaguchi; Yoshie Kimura; Hua Xiang; Yasushi Ishikawa
- Web page: https://patentgrep.com/patent/US12217955B2

## CPC

- H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD}
- C23C 16/045: {Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates}
- C23C 16/401: {containing silicon}
- C23C 16/45536: {Use of plasma, radiation or electromagnetic fields}
- C23C 16/45553: {characterized by the use of precursors specially adapted for ALD}
- C23C 16/56: After-treatment
- H01J 37/3244: {Gas supply means}
- H01J 37/32449: {Gas control, e.g. control of the gas flow}
- H10P 14/6336: {in the presence of a plasma [PECVD]}
- H10P 14/6681: {the precursor containing a compound comprising Si}
- H10P 14/69215: {the material being a silicon oxide, e.g. SiO2}
- H10P 50/268: {of silicon-containing layers}
- H01J 37/32082: {Radio frequency generated discharge (H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence)}
- H01J 2237/334: Etching
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)

## Abstract

A method for patterning a stack having a mask with a plurality of mask features is provided. A targeted deposition is provided, wherein the targeted deposition comprises a plurality of cycles, wherein each cycle comprises flowing a precursor to deposit a layer of precursor and targeted curing the layer of precursor, comprising flowing a curing gas, flowing a modification gas, forming a plasma from the curing gas and modification gas, and exposing the layer of precursor to the plasma providing a targeted curing, wherein plasma from the curing gas cures first portions of the layer of precursor and plasma from the modification gas modifies second portions of the layer of precursor, wherein the modification of the second portion reduces curing of the layer of precursor of the second portions of the layer of precursor. The stack is etched through the targeted deposition.

## Claims

### Claim 1

A method for patterning a stack having a mask with a plurality of mask features, comprising:
providing a targeted deposition, wherein the targeted deposition, comprises a plurality of cycles, wherein each cycle comprises:
flowing a precursor to deposit a layer of precursor; and
targeted curing the layer of precursor, comprising;
flowing a curing gas;
flowing a modification gas;
forming a plasma from the curing gas and modification gas; and
exposing the layer of precursor to the plasma providing a targeted curing, wherein plasma from the curing gas cures first portions of the layer of precursor and plasma from the modification gas modifies second portions of the layer of precursor, wherein the modification of the second portion reduces curing of the layer of precursor of the second portions of the layer of precursor; and
etching the stack through the targeted deposition.

### Claim 2 (depends on 1)

The method, as recited in claim 1, wherein the precursor deposits at least one of a silicon containing layer or a metal containing layer.

### Claim 3 (depends on 2)

The method, as recited in claim 2, wherein the curing the first portions of the layer of precursor at least one of oxidizes or nitrogenates the first portions of the layer of precursor.

### Claim 4 (depends on 1)

The method, as recited in claim 1, wherein the modification gas comprises a halogen containing gas.

### Claim 5 (depends on 1)

The method, as recited in claim 1, wherein the modification gas comprises at least one of C4F8, C4F6, Cl2, HBr, CF4, or SF6.

### Claim 6 (depends on 1)

The method, as recited in claim 1, wherein the precursor comprises a silicon containing polymer.

### Claim 7 (depends on 1)

The method, as recited in claim 1, wherein the precursor comprises a polymer with a silicon functional group.

### Claim 8 (depends on 1)

The method, as recited in claim 1, wherein the flowing the precursor is plasmaless.

### Claim 9 (depends on 1)

The method, as recited in claim 1, wherein the mask is made of a carbon containing material.

### Claim 10 (depends on 1)

The method, as recited in claim 1, wherein the etching the stack etches features with a height to width aspect ratio of greater than 100 to 1.

### Claim 11 (depends on 1)

The method, as recited in claim 1, wherein providing the targeted deposition and the etching the stack are cyclically provided for a plurality of cycles.

### Claim 12 (depends on 1)

The method, as recited in claim 1, wherein the providing the targeted deposition and the etching the stack are provided in-situ in the same plasma chamber.

### Claim 13 (depends on 1)

The method, as recited in claim 1, wherein plasma from the modification gas etches the second portions of the layer of precursor.

### Claim 14

A semiconductor device formed by a method for patterning a stack having a mask with a plurality of mask features, the method comprising:
providing a targeted deposition, wherein the targeted deposition, comprises a plurality of cycles, wherein each cycle comprises:
flowing a precursor to deposit a layer of precursor; and
targeted curing the layer of precursor, comprising;
flowing a curing gas;
flowing a modification gas;
forming a plasma from the curing gas and modification gas; and
exposing the layer of precursor to the plasma providing a targeted curing, wherein plasma from the curing gas cures first portions of the layer of precursor and plasma from the modification gas modifies second portions of the layer of precursor, wherein the modification of the second portion reduces curing of the layer of precursor of the second portions of the layer of precursor; and
etching the stack through the targeted deposition.

### Claim 15 (depends on 14)

The semiconductor device, as recited in claim 14, wherein the precursor deposits at least one of a silicon containing layer or a metal containing layer.

### Claim 16 (depends on 15)

The semiconductor device, as recited in claim 15, wherein the curing the first portions of the layer of precursor at least one of oxidizes or nitrogenates the first portions of the layer of precursor.

### Claim 17 (depends on 14)

The semiconductor device, as recited in claim 14, wherein the modification gas comprises a halogen containing gas.

### Claim 18 (depends on 14)

The semiconductor device, as recited in claim 14, wherein the modification gas comprises at least one of C4F8, C4F6, Cl2, HBr, CF4, or SF6.

### Claim 19 (depends on 14)

The semiconductor device, as recited in claim 14, wherein the precursor comprises a silicon containing polymer.

### Claim 20 (depends on 14)

The semiconductor device, as recited in claim 14, wherein plasma from the modification gas etches the second portions of the layer of precursor.