# US 12,217,531 B2 · Texture recognition device and display apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,217,531 B2 - Document ID: US12217531B2 - Status: Granted - Kind: B2 - Application number: 17/784,801 - Filed: 2021-06-22 - Published: 2024-06-06 - Granted: 2025-02-04 - Earliest claimed: 2021-06-22 - Assignees: Beijing BOE Sensor Technology Co., Ltd.; Boe Technology Group Co., Ltd. - Applicants: Beijing Boe Sensor Technology Co., Ltd.; Boe Technology Group Co., Ltd. - Inventors: Jie Zhang; Shoujin Cai; Jin Cheng; Dexi Kong; Cheng Li; Yingzi Wang - Web page: https://patentgrep.com/patent/US12217531B2 ## CPC - G06V 40/1318: {using electro-optical elements or layers, e.g. electroluminescent sensing} - H10F 39/198: {Contact-type image sensors [CIS]} - H10F 39/802: {Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes} - H10F 39/8057: {Optical shielding} - H10F 39/806: {Optical elements or arrangements associated with the image sensors} - H10F 39/8063: {Microlenses} - H10F 39/811: {Interconnections} - H10F 39/8023: {Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery} - G06V: IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract A texture recognition device and a display apparatus are provided, the texture recognition device has a plurality of pixel units, and includes a base substrate, a driving circuit layer, a first electrode layer and a photosensitive element layer; at least one of the plurality of pixel units includes a pixel driving circuit in the driving circuit layer, a first electrode in the first electrode layer, and a plurality of photosensitive elements spaced apart from each other in the photosensitive element layer, the pixel driving circuit is electrically connected with the first electrode, the plurality of photosensitive elements are on a side of the first electrode away from the base substrate, and are electrically connected to the pixel driving circuit through the first electrode. ## Claims ### Claim 1 A texture recognition device, having a plurality of pixel units, and comprising: a base substrate, a driving circuit layer on the base substrate, a first electrode layer on a side of the driving circuit layer away from the base substrate, and a photosensitive element layer on a side of the first electrode layer away from the base substrate, wherein at least one of the plurality of pixel units comprises a pixel driving circuit in the driving circuit layer, a first electrode in the first electrode layer, and a plurality of photosensitive elements spaced apart from each other in the photosensitive element layer, the pixel driving circuit is electrically connected with the first electrode, the plurality of photosensitive elements are on a side of the first electrode away from the base substrate, and are electrically connected with the pixel driving circuit through the first electrode; the first electrode comprises at least one first hollowed-out portion between two adjacent photosensitive elements of the plurality of photosensitive elements. ### Claim 2 (depends on 1) The texture recognition device according to claim 1, further comprising an interlayer insulation layer between the driving circuit layer and the first electrode layer, wherein the interlayer insulation layer comprises a via, and the first electrode is electrically connected with the pixel driving circuit through the via; an orthographic projection of the via on the base substrate does not overlap with orthographic projections of the plurality of photosensitive elements on the base substrate. ### Claim 3 (depends on 1) The texture recognition device according to claim 1, wherein at least one of the plurality of pixel units includes a plurality of photosensitive elements arranged in an M*N array, wherein M is a positive integer greater than or equal to 1, and N is a positive integer greater than 1. ### Claim 4 (depends on 3) The texture recognition device according to claim 3, wherein M is 2, N is 2, and the plurality of photosensitive elements are arranged in a 2*2 array. ### Claim 5 (depends on 2) The texture recognition device according to claim 2, further comprising a second electrode layer on a side of the photosensitive element layer away from the base substrate, wherein the at least one pixel unit further comprises a plurality of second electrodes in the second electrode layer, and the plurality of second electrodes are respectively on a side of the plurality of photosensitive elements away from the base substrate. ### Claim 6 (depends on 5) The texture recognition device according to claim 5, further comprising a third electrode layer on a side of the second electrode layer away from the base substrate, wherein the plurality of second electrodes are electrically connected with the third electrode layer. ### Claim 7 (depends on 6) The texture recognition device according to claim 6, wherein the third electrode layer comprises at least one second hollowed-out portion between two adjacent pixel units of the plurality of pixel units. ### Claim 8 (depends on 7) The texture recognition device according to claim 7, wherein the driving circuit layer further comprises a signal scanning line electrically connected with the pixel driving circuit, an orthographic projection of the at least one second hollowed-out portion on the base substrate at least partially overlaps with an orthographic projection of the signal scanning line on the base substrate. ### Claim 9 (depends on 7) The texture recognition device according to claim 7, wherein the driving circuit layer further comprises a signal readout line electrically connected with the pixel driving circuit, an orthographic projection of the at least one second hollowed-out portion on the base substrate at least partially overlaps with an orthographic projection of the signal readout line on the base substrate. ### Claim 10 (depends on 9) The texture recognition device according to claim 9, wherein the second hollowed-out portion at least partially overlapping with the signal readout line has a length ranging from 8 μm to 97 μm, and has a width ranging from 2.5 μm to 20 μm; the second hollowed-out portion at least partially overlapping with the signal scanning line has a length ranging from 20 μm to 97 μm, and has a width ranging from 6 μm to 20 μm. ### Claim 11 (depends on 6) The texture recognition device according to claim 6, further comprising an electrostatic shielding layer on a side of the third electrode layer away from the base substrate, wherein an orthographic projection of the third electrode layer on the base substrate is within an orthographic projection of the electrostatic shielding layer on the base substrate. ### Claim 12 (depends on 11) The texture recognition device according to claim 11, further comprising a first diaphragm layer on a side of the electrostatic shielding layer away from the base substrate, wherein the first diaphragm layer comprises a plurality of first light transmission openings, in a direction perpendicular to a board surface of the base substrate, the first light transmission openings are in one-to-one correspondence with and overlap with the plurality of photosensitive elements. ### Claim 13 (depends on 12) The texture recognition device according to claim 12, further comprising a second diaphragm layer on a side of the first diaphragm layer away from the base substrate, wherein the second diaphragm layer comprises a plurality of second light transmission openings, in the direction perpendicular to the board surface of the base substrate, the second light transmission openings are in one-to-one correspondence with and overlap with the plurality of photosensitive elements; in a direction parallel to the board surface of the base substrate, a diameter of each of the plurality of first light transmission openings is D1, a diameter of each of the plurality of second light transmission openings is D2, and 2 μm≤D1≤D2≤50 μm. ### Claim 14 (depends on 12) The texture recognition device according to claim 12, further comprising a visual field diaphragm layer between the electrostatic shielding layer and the first diaphragm layer, wherein the visual field diaphragm layer comprises a plurality of third light transmission openings, in the direction perpendicular to the board surface of the base substrate, the third light transmission openings are in one-to-one correspondence with and overlap with the plurality of photosensitive elements. ### Claim 15 (depends on 13) The texture recognition device according to claim 13, further comprising a lens layer on a side of the second diaphragm layer away from the base substrate and a planarization layer on a side of the lens layer away from the base substrate, wherein the lens layer comprises a plurality of lens units, and in the direction perpendicular to the board surface of the base substrate, the plurality of lens units are in one-to-one correspondence with and overlap with the plurality of photosensitive elements; a refractive index of a material of the planarization layer ranges from 1.35 to 1.45. ### Claim 16 (depends on 2) The texture recognition device according to claim 2, wherein the pixel driving circuit comprises a first thin film transistor, a second thin film transistor and a third thin film transistor; a control terminal of the first thin film transistor is connected with a signal scanning line, and a first source-drain terminal of the first thin film transistor and a second source-drain terminal of the first thin film transistor are respectively connected with a signal readout line and a first source-drain terminal of the second thin film transistor; a control terminal of the second thin film transistor is connected with a first source-drain terminal of the third thin film transistor, and a second source-drain terminal of the second thin film transistor is connected with a power line; a control terminal of the third thin film transistor is connected with a reset signal line, and a second source-drain terminal of the third thin film transistor is connected with the power line. ### Claim 17 (depends on 16) The texture recognition device according to claim 16, wherein, for the pixel driving circuit of each of the plurality of pixel units, the first thin film transistor and the second thin film transistor are arranged on a first side of the via comprised in the interlayer insulation layer, and the third thin film transistor is arranged on a second side of the via, and the first side and the second side are opposite to each other. ### Claim 18 (depends on 16) The texture recognition device according to claim 16, wherein an orthographic projection of the power line on the base substrate partially overlaps with an orthographic projection of at least part of the plurality of photosensitive elements on the base substrate. ### Claim 19 (depends on 1) A display apparatus comprising: a display panel, having a display side and a non-display side and allowing light to be transmitted from the display side to the non-display side, and the texture recognition device according to claim 1, wherein the texture recognition device is on the non-display side of the display panel and is configured to receive the light transmitted from the display side to the non-display side for texture recognition, wherein the photosensitive element layer is closer to the display panel than the base substrate.