MEMS resonator sensor substrate for plasma, temperature, stress, or deposition sensing
AssigneeApplied Materials, Inc.
InventorsChuang-Chia Lin, David Peterson, Philip Allan Kraus, Amir Bayati
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Abstract
Embodiments disclosed herein include diagnostic substrates and methods of using the diagnostic substrates to extract plasma parameters. In an embodiment, a diagnostic substrate comprises a substrate and an array of resonators across the substrate. In an embodiment, the array of resonators comprises at least a first resonator with a first structure and a second resonator with a second structure. In an embodiment, the first structure is different than the second structure.
Claims13
A method of measuring a plasma parameter in a plasma chamber, comprising:
- providing a diagnostic substrate in the plasma chamber, wherein the diagnostic substrate comprises a first resonator with a first geometry and a second resonator with a second geometry;
- measuring a baseline response from the first resonator and the second resonator in a vacuum without a plasma;
- striking the plasma in the plasma chamber, wherein the first resonator and the second resonator are within the plasma;
- measuring a first resonance frequency of the first resonator and a second resonance frequency of the second resonator;
- extracting the plasma parameter or a wafer parameter from the first resonance frequency and the second resonance frequency;
- and
- measuring a resonator response of the first resonator and the second resonator to a varying bias applied to the first resonator and the second resonator by a first guard ring and a second guard ring.
A method of fabricating a diagnostic substrate, the method comprising:
- providing a substrate;
- and
- forming an array of resonators across the substrate, wherein the array of resonators comprises at least a first resonator with a first structure and a second resonator with a second structure, wherein the first structure has a diameter different than a diameter of the second structure, wherein the first structure comprises a first membrane resonating member having a bottom surface a first distance from the substrate, and wherein the second structure comprises a second membrane resonating member having a bottom surface a second distance from the substrate, wherein the first distance is different than the second distance.
A method of measuring a plasma parameter in a plasma chamber, comprising:
- providing a diagnostic substrate in the plasma chamber, wherein the diagnostic substrate comprises a first resonator with a first geometry and a second resonator with a second geometry;
- measuring a baseline response from the first resonator and the second resonator in a vacuum without a plasma;
- striking the plasma in the plasma chamber, wherein the first resonator and the second resonator are within the plasma;
- measuring a first resonance frequency of the first resonator and a second resonance frequency of the second resonator;
- extracting the plasma parameter or a wafer parameter from the first resonance frequency and the second resonance frequency;
- applying a first bias around the first resonator;
- and
- applying a second bias around the second resonator, wherein the first bias is different than the second bias, and wherein the first bias and the second bias are modulated biases.
Dependencies are inferred from the claim text.