# US 12,215,439 B2 · SiC epitaxial wafer

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- Number: US 12,215,439 B2
- Document ID: US12215439B2
- Status: Granted
- Kind: B2
- Application number: 18/523,840
- Filed: 2023-11-29
- Published: 2024-03-21
- Granted: 2025-02-04
- Earliest claimed: 2022-05-31
- Assignees: Resonac Corporation
- Applicants: Resonac Corporation
- Inventors: Hiromasa Suo; Rimpei Kindaichi; Tamotsu Yamashita
- Web page: https://patentgrep.com/patent/US12215439B2

## CPC

- C30B 29/36: Carbides
- C30B 23/06: Heating of the deposition chamber, the substrate or the materials to be evaporated
- C30B 25/20: the substrate being of the same materials as the epitaxial layer
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR

## Abstract

A SiC epitaxial wafer including: a SiC substrate; and a SiC epitaxial layer stacked on one surface of the SiC substrate, wherein a diameter of the SiC substrate is 195 mm or more, and a warp is 50 μm or less.

## Claims

### Claim 1

A SiC epitaxial wafer comprising:
a SiC substrate; and
a SiC epitaxial layer stacked on one surface of the SiC substrate, wherein,
a diameter of the SiC substrate is 195 mm or more, and
a warp is 50 μm or less.

### Claim 2 (depends on 1)

The SiC epitaxial wafer according to claim 1,
wherein, in a surface of the SiC epitaxial layer, in a case where supports are positioned to overlap with a circumference on 7.5 mm inside from an outermost periphery and a plane passing through parts overlapping with the supports when seen in a thickness direction is defined as a reference plane, a bow is 30 μm or less.

### Claim 3 (depends on 1)

The SiC epitaxial wafer according to claim 1,
wherein, the warp is 30 μm or less.

### Claim 4 (depends on 2)

The SiC epitaxial wafer according to claim 2,
wherein, the bow is 10 μm or less.

### Claim 5 (depends on 2)

The SiC epitaxial wafer according to claim 2,
wherein, the bow is-30 μm or more.