# US 12,215,421 B2 · Systems and methods for pulse width modulated dose control > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,215,421 B2 - Document ID: US12215421B2 - Status: Granted - Kind: B2 - Application number: 18/526,411 - Filed: 2023-12-01 - Published: 2024-03-21 - Granted: 2025-02-04 - Earliest claimed: 2017-09-26 - Assignees: Lam Research Corporation - Applicants: Lam Research Corporation - Inventors: Mariusch Gregor - Web page: https://patentgrep.com/patent/US12215421B2 ## CPC - C23C 16/45544: {characterized by the apparatus} - B05B 1/14: with multiple outlet openings (B05B1/02, B05B1/26 take precedence); with strainers in or outside the outlet opening - B05B 1/1423: {comprising concentric or coaxial groups} - B05B 1/30: designed to control volume of flow, e.g. with adjustable passages {(B05B11/0094 takes precedence)} - C23C 16/45557: {Pulsed pressure or control pressure} - C23C 16/45565: {Shower nozzles} - H01J 37/32449: {Gas control, e.g. control of the gas flow} - H10P 72/0402: {Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence)} - H10P 72/0406: {for cleaning followed by drying, rinsing, stripping, blasting or the like} - H10P 72/0421: {for drying etching} - H10P 72/0462: {characterised by the construction of the processing chambers, e.g. modular processing chambers} - H10P 72/0604: {Process monitoring, e.g. flow or thickness monitoring} - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - B05B: SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES (spray-mixers with nozzles B01F25/72; processes for applying liquids or other fluent materials to surfaces by spraying B05D) - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A substrate processing system for treating a substrate includes N manifolds, Y groups of injector assemblies, and a dose controller, where Y and N are integers greater than one. Each of the Y groups of injector assemblies includes N injector assemblies located in a processing chamber. Each of the N injector assemblies in each group of injector assemblies is in fluid communication with one of the N manifolds, respectively, and includes a valve including an inlet and an outlet. The dose controller is configured to control pulse widths output to the Y groups of injector assemblies to provide temporal dosing of the substrate. ## Claims ### Claim 1 A substrate processing system for treating a substrate, comprising: N manifolds; Y groups of injector assemblies, wherein Y and N are integers greater than one, wherein each of the Y groups of injector assemblies includes N injector assemblies located in a processing chamber, wherein each of the N injector assemblies in each group of injector assemblies is in fluid communication with one of the N manifolds, respectively, and includes a valve including an inlet and an outlet; and a dose controller configured to control pulse widths output to the Y groups of injector assemblies to provide temporal dosing of the substrate, wherein the dose controller is configured to vary the pulse widths based on at least one of manufacturing differences between the valves in at least one of the N injector assemblies and non-uniformities of the valves in at least one of the N injector assemblies. ### Claim 2 (depends on 1) The substrate processing system of claim 1, wherein the temporal dosing includes supplying a first gas mixture from a first one of the N manifolds using a first one of the Y groups of injector assemblies while concurrently supplying a second gas mixture from a second one of the N manifolds using a second one of the Y groups of injector assemblies. ### Claim 3 (depends on 1) The substrate processing system of claim 1, wherein each of the N injector assemblies further includes a pressure sensor sensing pressure at the valve in each of the N injector assemblies. ### Claim 4 (depends on 3) The substrate processing system of claim 3, wherein the dose controller is configured to adjust the pulse widths based on the corresponding sensed pressures. ### Claim 5 (depends on 1) The substrate processing system of claim 1, wherein each of the N injector assemblies further includes a temperature sensor sensing gas temperature at the valve in each of the N injector assemblies. ### Claim 6 (depends on 5) The substrate processing system of claim 5, wherein the dose controller is configured to adjust the pulse widths based on the corresponding gas temperatures. ### Claim 7 (depends on 1) The substrate processing system of claim 1, wherein the dose controller is configured to vary the pulse widths based on at least one of manufacturing differences between the valves in each of the N injector assemblies and non-uniformities of the valves in each of the N injector assemblies. ### Claim 8 (depends on 1) The substrate processing system of claim 1, further comprising a pressure regulator to regulate a pressure inside the manifold. ### Claim 9 (depends on 1) The substrate processing system of claim 1, wherein each of the N injector assemblies further includes a restricted orifice. ### Claim 10 (depends on 1) The substrate processing system of claim 1, wherein each of the N injector assemblies further includes a bypass valve having an inlet connected to an inlet of the valve. ### Claim 11 (depends on 10) The substrate processing system of claim 10, wherein each of the N injector assemblies further includes a pressure sensor sensing pressure at the valve in each of the N injector assemblies, and wherein the dose controller is configured to adjust the pulse widths of the valves and the bypass valves based on the corresponding pressures. ### Claim 12 (depends on 10) The substrate processing system of claim 10, wherein each of the N injector assemblies further includes a temperature sensor sensing gas temperature at the valve in each of the N injector assemblies, and wherein the dose controller is configured to adjust the pulse widths of the valves and the bypass valves based on the corresponding gas temperatures. ### Claim 13 (depends on 10) The substrate processing system of claim 10, wherein the dose controller is configured to vary the pulse widths based on a desired overlap of the valve and the bypass valve for each of the N injector assemblies.