# US 12,215,417 B2 · Substrate processing method and substrate processing device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,215,417 B2 - Document ID: US12215417B2 - Status: Granted - Kind: B2 - Application number: 17/701,341 - Filed: 2022-03-22 - Published: 2022-07-07 - Granted: 2025-02-04 - Earliest claimed: 2016-04-15 - Assignees: Tokyo Electron Limited - Applicants: Tokyo Electron Limited - Inventors: Satoshi Toda; Tetsuro Takahashi - Web page: https://patentgrep.com/patent/US12215417B2 ## CPC - C23C 16/45502: {Flow conditions in reaction chamber} - C23C 16/4412: {Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps} - C23C 16/455: characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber - C23C 16/52: Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} - C23F 1/08: Apparatus, e.g. for photomechanical printing surfaces (photo- mechanical reproduction G03F) - H10P 50/00: Etching of wafers, substrates or parts of devices - H10P 50/283: {by chemical means} - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - C23F: NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE (working metal by laser beams B23K26/00; desurfacing by applying flames B23K7/00; working of metal by electro-erosion B23H; producing decorative effects by removing surface material, e.g. by engraving, by etching, B44C1/22; electrolytic etching or polishing C25F); INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A predetermined process is performed on two target substrates using a substrate processing device that includes two processing parts for performing a substrate process on each of the two target substrates, a gas supply mechanism for separately supplying gases to the two processing parts, and a common exhaust mechanism for collectively exhausting the gases inside the two processing parts. A first mode is executed in which an HF gas and an NH3 gas are supplied to one of the two processing parts, and the HF gas is not supplied to the other of the two processing parts. Subsequently, a second mode is executed in which the HF gas and the NH3 gas are supplied to the two processing parts under the same gas conditions. In the first mode, a pressure difference is prevented from occurring between the two processing parts. ## Claims ### Claim 1 A substrate processing method for performing a predetermined process on a plurality of target substrates under a vacuum atmosphere using a substrate processing device that includes a plurality of processing parts for performing a substrate process on each of the plurality of target substrates, a gas supply mechanism for separately supplying gases to the plurality of processing parts, and a common exhaust mechanism for exhausting the gases inside the plurality of processing parts in a collective manner, the method comprising: performing a first mode while controlling the common exhaust mechanism so as to exhaust a processing gas in common from the plurality of processing parts; and subsequently, performing a second mode in which a first gas as the processing gas is supplied to all of the plurality of processing parts under the same gas conditions, while exhausting the processing gas from the plurality of processing parts in a collective manner by the common exhaust mechanism, wherein, in the first mode, a pressure difference is prevented from occurring between the plurality of processing parts, and wherein, when performing the first mode, in a portion of the plurality of processing parts, the substrate process is performed with the first gas which is the processing gas for the plurality of target substrates; and in another portion of the plurality of processing parts, the first gas which is the processing gas for the plurality of target substrates is not supplied, a second gas is supplied as a supplement gas, and the substrate process is not performed. ### Claim 2 (depends on 1) The substrate processing method of claim 1, wherein the performing a first mode includes controlling an amount of the second gas supplied to the another portion of the plurality of processing parts so as to prevent the pressure difference from occurring between the portion of the plurality of processing parts and the another portion of the plurality of processing parts. ### Claim 3 (depends on 1) The substrate processing method of claim 1, wherein the second gas is at least one of an inert gas and a non-reactive gas that is not reactive with the plurality of target substrates. ### Claim 4 (depends on 1) The substrate processing method of claim 1, wherein a dilution gas for diluting the first gas is used as the second gas. ### Claim 5 (depends on 1) The substrate processing method of claim 1, further comprising: prior to the performing a first mode, stabilizing pressures of the plurality of processing parts by regulating the pressures of the plurality of processing parts with a pressure regulating gas, wherein the stabilizing pressures includes setting a flow rate of the pressure regulating gas to a level at which the first gas used as the processing gas and the second gas used as the supplement gas are suppressed from backwardly diffusing between the plurality of processing parts, and a flow of the pressure regulating gas toward the common exhaust mechanism is formed, in the first mode of the substrate process. ### Claim 6 (depends on 5) The substrate processing method of claim 5, wherein a portion of the first gas or the second gas supplied during the substrate process, which is not used for the substrate process, is used as the pressure regulating gas, and the flow rate of the pressure regulating gas in the stabilizing pressures is set to be larger than a flow rate of the pressure regulating gas used in the substrate process. ### Claim 7 (depends on 6) The substrate processing method of claim 6, wherein the flow rate of the pressure regulating gas in the stabilizing pressures is set to be three times or more the flow rate of the pressure regulating gas used in the substrate process. ### Claim 8 A substrate processing method for performing a predetermined process on a plurality of target substrates under a vacuum atmosphere using a substrate processing device that includes a plurality of processing parts for performing a substrate process on each of the plurality of target substrates, a gas supply mechanism for separately supplying gases to the plurality of processing parts, and a common exhaust mechanism for exhausting the gases inside the plurality of processing parts in a collective manner, the method comprising: performing a first mode in which an HF gas and an NH3 gas as processing gases are supplied to a portion of the plurality of processing parts so as to perform an etching process, and instead of the HF gas, an inert gas and/or a non-reactive gas which is not reactive with the plurality of target substrates is supplied to another portion of the plurality of processing parts so as not to perform the etching process, while controlling the common exhaust mechanism so as to exhaust the processing gases from the plurality of processing parts in a collective manner by the common exhaust mechanism; and subsequently, performing a second mode in which the HF gas and the NH3 gas as the processing gases are supplied to all of the plurality of processing parts so as to perform the etching process, while controlling the common exhaust mechanism so as to exhaust the processing gases in common from the plurality of processing parts, wherein, in the first mode, the supply of a mixed gas of the HF gas and the NH3 gas or a mixed gas of the inert gas and/or the non-reactive gas is performed to prevent a pressure difference from occurring between the plurality of processing parts. ### Claim 9 (depends on 8) The substrate processing method of claim 8, wherein the performing a first mode includes supplying the HF gas and the NH3 gas as the processing gases and the inert gas to the portion of the plurality of processing parts, and supplying the inert gas or the inert gas and the NH3 gas to the another portion of the plurality of processing parts, wherein the inert gas is used as a supplement gas for regulating pressures of the portion of the plurality of processing parts and the another portion of the plurality of processing parts. ### Claim 10 (depends on 9) The substrate processing method of claim 9, further comprising: prior to the performing a first mode, stabilizing pressures of the plurality of processing parts by regulating the pressures of the plurality of processing parts with the inert gas or the inert gas and the NH3 gas as pressure regulating gases, wherein the stabilizing pressures includes setting flow rates of the pressure regulating gases to a level at which the processing gases and the inert gas are suppressed from backwardly diffusing between the plurality of processing parts, and a flow of the pressure regulating gases toward the common exhaust mechanism is formed, in the first mode of the substrate process. ### Claim 11 (depends on 10) The substrate processing method of claim 10, wherein the flow rates of the pressure regulating gases in the stabilizing pressures are set to be larger than flow rates of the pressure regulating gas used in the substrate process. ### Claim 12 (depends on 11) The substrate processing method of claim 11, wherein the flow rates of the pressure regulating gases in the stabilizing pressures are set to be three times or more the flow rates used in the substrate process.