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US 12,215,031 B2Granted
High purity polysilocarb derived silicon carbide powder
AssigneePallidus, Inc.
InventorsAndrew R. Hopkins, Ashish P. Diwanji, Walter J. Sherwood, Douglas M. Dukes, Glenn Sandgren, Mark S. Land, Brian L. Benac
Life of this patent
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Abstract
Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.
Claims3
A high purity polysilocarb derived ceramic SiC powder the powder comprising:
- a. silicon carbide;
- b. the powder having an average diameter of less than 1 μm, and defining a surface, wherein the surface is resistant to oxidation when exposed to air under standard ambient temperature and pressure, whereby the surface is essentially free of an oxide layer when exposed to air at standard ambient temperature and pressure;
- and,
- c. wherein the powder is substantially free from impurities, whereby total impurities are less than 1 ppm.
1 more element
A high purity polysilocarb derived ceramic SIC powder the powder comprising:
- a. silicon carbide;
- b. the powder having an average diameter of less than 0.6 μm, and defining a surface, wherein the surface is resistant to oxidation when exposed to air under standard ambient temperature and pressure, whereby the surface is essentially free of an oxide layer when exposed to air at standard ambient temperature and pressure;
- and,
- c. wherein the powder is substantially free from impurities, whereby total impurities are less than 1 ppm.
1 more element
A high purity polysilocarb derived ceramic SiC powder, the powder comprising:
- a silicon carbide;
- b. the powder having an average diameter of less than 100 μm, and defining a surface, wherein the surface is resistant to oxidation when exposed to air under standard ambient temperature and pressure, whereby the surface is essentially free of an oxide layer when exposed to air at standard ambient temperature and pressure;
- and,
- c. wherein the powder is substantially free from impurities, whereby total impurities are less than 1 ppm.
1 more element
Dependencies are inferred from the claim text.