# US 12,214,446 B2 · Laser lift-off integrated apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,214,446 B2 - Document ID: US12214446B2 - Status: Granted - Kind: B2 - Application number: 17/310,567 - Filed: 2020-06-01 - Published: 2022-06-09 - Granted: 2025-02-04 - Earliest claimed: 2019-08-26 - Assignees: Sino Nitride Semiconductor Co., Ltd. - Applicants: Sino Nitride Semiconductor Co., Ltd. - Inventors: Jingquan Lu; Junjie Ren; Wenrong Zhuang; Ming Sun - Web page: https://patentgrep.com/patent/US12214446B2 ## CPC - B23K 26/53: for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks - H10P 90/12: {Preparing bulk and homogeneous wafers} - B23K 26/00: Working by laser beam, e.g. welding, cutting or boring - B23K 26/032: {using optical means} - B23K 26/046: Automatically focusing the laser beam - B23K 26/0665: {by beam condensation on the workpiece, e.g. for focusing} - B23K 26/082: Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head - B23K 26/702: {Auxiliary equipment} - B23K 26/707: {for monitoring laser beam transmission optics} - B23K 26/0823: {Devices involving rotation of the workpiece} - B23K 26/083: {Devices involving movement of the workpiece in at least one axial direction} - B23K 2103/56: {being semiconducting} - H10P 74/203: {Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects} - B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A laser lift-off integrated apparatus includes a laser light source configured to perform laser lift-off on a wafer to undergo lift-off, a lift-off chamber configured to bear the wafer to undergo lift-off, a heater configured to provide temperature required by the wafer to undergo lift-off during a lift-off process, a profile measuring device configured to acquire surface profile information of the wafer to undergo lift-off, and a movable device configured to, according to the surface profile information acquired by the profile measuring device, adjust a height of the wafer to undergo lift-off such that a focus of the laser light source is at a position where the wafer to undergo lift-off is to undergo lift-off. ## Claims ### Claim 1 A laser lift-off integrated apparatus, comprising: a laser light source configured to perform laser lift-off on a wafer to undergo lift-off; a lift-off chamber configured to bear the wafer to undergo lift-off; a heater configured to provide temperature required by the wafer to undergo lift-off during a lift-off process; a profile measuring device configured to acquire surface profile information of the wafer to undergo lift-off; and a movable device configured to adjust, according to the surface profile information acquired by the profile measuring device, a height of the wafer to undergo lift-off such that a focus of the laser light source is at a position where the wafer to undergo lift-off is to undergo lift-off, wherein the profile measuring device is further configured to, after the surface profile information of the wafer to undergo lift-off is acquired, divide, according to the surface profile information, a surface of the wafer to undergo lift-off into a plurality of areas to undergo lift-off, and wherein a number of the plurality of areas to undergo lift-off is set according to an overall profile height difference of the wafer to undergo lift-off and a focal depth of the laser light source; and a maximum height difference inside each of the plurality of areas to undergo lift-off is less than or equal to the focal depth of the laser light source. ### Claim 2 (depends on 1) The laser lift-off integrated apparatus according to claim 1, wherein the profile measuring device comprises one of a profilometer or a laser rangefinder. ### Claim 3 (depends on 2) The laser lift-off integrated apparatus according to claim 2, wherein the profile measuring device is a profilometer, wherein the profilometer is configured to indirectly measure a surface profile of the wafer to undergo lift-off, and a measurement method used by the profilometer comprises one of white light interferometry, Nomarski interferometry or shearing interferometry. ### Claim 4 (depends on 3) The laser lift-off integrated apparatus according to claim 3, wherein the measurement method of the profilometer is the whiter light interferometry, wherein the whiter light interferometry comprises one of phase scanning interferometry or vertical scanning interferometry. ### Claim 5 (depends on 1) The laser lift-off integrated apparatus according to claim 1, wherein the profile measuring device is further configured to, after laser lift-off of the each of the plurality of areas to undergo lift-off is completed, scan and re-divide a remaining area of the wafer to undergo lift-off to form new areas to undergo lift-off. ### Claim 6 (depends on 1) The laser lift-off integrated apparatus according to claim 1, wherein the laser light source is able to adjust laser parameters according to a surface profile of the plurality of areas to undergo lift-off, wherein the laser parameters comprise at least one of a scan line speed or a duty cycle. ### Claim 7 (depends on 1) The laser lift-off integrated apparatus according to claim 1, wherein the movable device is further configured to drive the wafer to undergo lift-off to perform at least one of horizontal movement or horizontal rotation. ### Claim 8 (depends on 1) The laser lift-off integrated apparatus according to claim 1, further comprising a reflector, wherein the profile measuring device and the reflector are positioned over the wafer to undergo lift-off and on two sides of the wafer to undergo lift-off, the profile measuring device faces the reflector, and the reflector is configured to reflect and image the wafer to undergo lift-off into the profile measuring device through tilting rotation. ### Claim 9 (depends on 1) The laser lift-off integrated apparatus according to claim 1, wherein a wavelength of the laser light source is 355 nanometers or 266 nanometers.