Semiconductor device and display device
AssigneeJapan Display Inc.
InventorsAkihiro Hanada, Toshinari Sasaki, Ryo Onodera
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Abstract
According to one embodiment, in a first concentration of an impurity element contained in a first impurity region, a second concentration of the impurity element contained in a second impurity region, a third concentration of the impurity element contained in a third impurity region, and a fourth concentration of the impurity element contained in a high-concentration impurity region, the third concentration is equal to the fourth concentration, the third concentration is higher than the first concentration, and the first concentration is higher than the second concentration.
Claims11
A semiconductor device comprising:
- an oxide semiconductor layer;
- an insulating layer in contact with the oxide semiconductor layer;
- and
- a gate electrode, a source electrode, and a drain electrode, the gate electrode, the source electrode, and the drain electrode overlapping the oxide semiconductor layer, wherein
- the oxide semiconductor layer includes
- a channel forming region overlapping the gate electrode,
- a high-concentration impurity region in contact with the source electrode and the drain electrode,
- a first impurity region overlapping the source electrode and the drain electrode, the first impurity region being different from the high-concentration impurity region,
- a second impurity region provided between the channel forming region and the first impurity region, and
- a third impurity region provided between the first impurity region and the second impurity region,
- the high-concentration impurity region, the first impurity region, the second impurity region, and the third impurity region contain the same impurity element,
- in a first concentration of the impurity element contained in the first impurity region, a second concentration of the impurity element contained in the second impurity region, a third concentration of the impurity element contained in the third impurity region, and a fourth concentration of the impurity element contained in the high-concentration impurity region, the third concentration is equal to the fourth concentration, the third concentration is higher than the first concentration, and the first concentration is higher than the second concentration, and
- the source electrode and the drain electrode contain the impurity element.
A semiconductor device comprising:
- an oxide semiconductor layer;
- an insulating layer in contact with the oxide semiconductor layer;
- and
- a gate electrode, a source electrode, and a drain electrode, the gate electrode, the source electrode, and the drain electrode overlapping the oxide semiconductor layer, wherein
- the oxide semiconductor layer includes
- a channel forming region overlapping the gate electrode,
- a high-concentration impurity region, at least a part of the high-concentration impurity region being in contact with and overlapping the source electrode and the drain electrode,
- a first region overlapping the source electrode and the drain electrode, the first region being different from the high-concentration impurity region, and
- a second impurity region provided between the channel forming region and the first region,
- the source electrode and the drain electrode have a stacked structure of a first metal layer and a second metal layer,
- the high-concentration impurity region and the second impurity region contain the same impurity element,
- a first concentration of the impurity element contained in the high-concentration impurity region is lower than or equivalent to a second concentration of the impurity element contained in the second impurity region, and
- the source electrode and the drain electrode contain the impurity element.
Dependencies are inferred from the claim text.