Charge or electricity generating devices and methods of making and use thereof

A charge or electricity generating device comprising:

• a first electrode;
• an electron transport layer;
• a perovskite layer;
• a hole transport layer;
• and
• a second electrode;
• wherein the electron transport layer is disposed between the first electrode and the perovskite layer such that the electron transport layer is in physical contact with the first electrode and the perovskite layer;
• wherein the perovskite layer is disposed between the electron transport layer and the hole transport layer such that the perovskite layer is in physical contact with the electron transport layer and the hole transport layer;
• wherein the hole transport layer is disposed between the second electrode and the perovskite layer such that the hole transport layer is in physical contact with the perovskite layer and the second electrode;
• wherein the perovskite layer comprises a perovskite having a crystal lattice comprising a plurality of atoms, wherein at least a portion of the plurality of atoms within the crystal lattice of the perovskite comprise a radioactive isotope having a half-life of 100 days or more, wherein each radioactive isotope replaces one atom that is a non-radioactive counterpart of the radioactive isotope, such that the perovskite intrinsically comprises one or more radioactive isotopes in its crystal lattice;
• and
• wherein:
• the perovskite layer comprises an n-type perovskite layer and a p-type perovskite layer;
• wherein the n-type perovskite layer comprises the perovskite doped with an n-type dopant or comprises the perovskite with n-type self-doping;
• wherein the p-type perovskite layer comprises the perovskite doped with a p-type dopant or comprises the perovskite with p-type self-doping;
• wherein the n-type perovskite layer is disposed between the electron transport layer and the p-type perovskite layer such that the n-type perovskite layer is in physical contact with the electron transport layer and the p-type perovskite layer;
• and
• wherein the p-type perovskite layer is disposed between the n-type perovskite layer and the hole transport layer such that the p-type perovskite layer is in physical contact with the n-type perovskite layer and the hole transport layer.