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US 12,212,115 B2Granted
Semiconductor light-emitting apparatus and method of fabricating semiconductor light-emitting apparatus
AssigneeNuvoton Technology Corporation Japan
InventorsKatsuya Samonji, Tohru Nishikawa
Life of this patent
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Abstract
Semiconductor light-emitting apparatus includes substrate, submount above substrate, and semiconductor laser above submount. Semiconductor laser and submount are bonded to each other with first bonding material. Substrate and submount are bonded to each other with second bonding material. Submount has first region and second region near substrate, first region being a region on which spacer is disposed, and second region being a region without spacer. Submount is bonded to substrate by covering at least a portion of second region with second bonding material.
Claims27
A semiconductor light-emitting apparatus, comprising:
- a substrate;
- a submount above the substrate;
- and
- a semiconductor light-emitting device above the submount, wherein:
- the semiconductor light-emitting device and the submount are bonded to each other with a first bonding material,
- the substrate and the submount are bonded to each other with a second bonding material, the submount has a portion facing the substrate,
- the submount includes a submount main body,
- the submount main body is provided with a spacer made of a metal or a metal alloy,
- the second bonding material has a thickness less than or equal to 10 μm,
- [
- Math
- .
-
- 1
- ]
-
- Δ
-
-
- T
- ·
- (
- a
- stem
- -
- a
- sub
- )
- ·
- Z
- ·
- (
- W
- 2
- ·
- L
- 2
- d
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- ≤
- C
-
-
- and
- (
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-
-
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-
- C
- =
- 3
- ×
- 10
- -
- 3
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- Expression
-
-
- 2
- )
- are satisfied, where
- d (m) is an average thickness of the second bonding material,
- ΔT (K) is a temperature change range ensured in the semiconductor light-emitting apparatus,
- αsub (K−1) is a thermal expansion coefficient of the submount main body,
- αstem (K−1) is a thermal expansion coefficient of the substrate,
- Z (GPa) is a modulus of elasticity of the second bonding material,
- W (m) is a width of the submount main body,
- L (m) is a length of the submount main body, and
- C (GN/m) is a crack-occurrence critical constant of the second bonding material,
- the submount has a portion facing the substrate, the portion having a first region on which the spacer is disposed and a second region without the spacer,
- the submount is bonded to the substrate by covering at least a portion of the second region with the second bonding material, and
- a first metal film is disposed on a surface of the submount main body near the substrate.
79 more elements
A semiconductor light-emitting apparatus, comprising:
- a substrate;
- a submount above the substrate;
- and
- a semiconductor light-emitting device above the submount, wherein:
- the semiconductor light-emitting device and the submount are bonded to each other with a first bonding material,
- the substrate and the submount are bonded to each other with a second bonding material, the submount has a portion facing the substrate,
- the submount includes a submount main body,
- [
- Math
- .
- 1
- ]
-
- Δ
-
- T
- ·
- (
- α
- stem
- -
- α
- sub
- )
- ·
- Z
- ·
- (
- W
- 2
- ·
- L
- 2
- d
- )
- ≤
- C
-
- and
- (
- Expression
-
- 1
- )
- [
- Math
- .
- 2
- ]
-
- C
- =
- 3
- ×
- 10
- -
- 3
- (
- Expression
-
- 2
- )
- are satisfied, where
- d (m) is an average thickness of the second bonding material,
- ΔT (K) is a temperature change range ensured in the semiconductor light-emitting apparatus,
- αsub (K−1) is a thermal expansion coefficient of the submount main body,
- αstem (K−1) is a thermal expansion coefficient of the substrate,
- Z (GPa) is a modulus of elasticity of the second bonding material,
- W (m) is a width of the submount main body,
- L (m) is a length of the submount main body, and
- C (GN/m) is a crack-occurrence critical constant of the second bonding material,
- a first metal film is disposed on a surface of the submount main body near the substrate, and
- the first metal film has a first adhesion layer and a deterioration prevention layer, the first adhesion layer and the deterioration prevention layer being disposed sequentially from the surface of the submount main body.
70 more elements
A semiconductor light-emitting apparatus, comprising:
- a substrate;
- a submount above the substrate;
- and
- a semiconductor light-emitting device above the submount, wherein
- the semiconductor light-emitting device and the submount are bonded to each other with a first bonding material,
- the substrate and the submount are bonded to each other with a second bonding material, the submount has a portion facing the substrate,
- the submount includes a submount main body,
- [
- Math
- .
- 1
- ]
-
- Δ
-
- T
- ·
- (
- α
- stem
- -
- α
- sub
- )
- ·
- Z
- ·
- (
- W
- 2
- ·
- L
- 2
- d
- )
- ≤
- C
-
- and
- (
- Expression
-
- 1
- )
- [
- Math
- .
- 2
- ]
-
- C
- =
- 3
- ×
- 10
- -
- 3
- (
- Expression
-
- 2
- )
- are satisfied, where
- d (m) is an average thickness of the second bonding material,
- ΔT (K) is a temperature change range ensured in the semiconductor light-emitting apparatus,
- αsub (K−1) is a thermal expansion coefficient of the submount main body,
- αstem (K−1) is a thermal expansion coefficient of the substrate,
- Z (GPa) is a modulus of elasticity of the second bonding material,
- W (m) is a width of the submount main body,
- L (m) is a length of the submount main body, and
- C (GN/m) is a crack-occurrence critical constant of the second bonding material,
- the submount has a portion facing the substrate, the portion having a first region on which a spacer is disposed and a second region without the spacer,
- the submount is bonded to the substrate by covering at least a portion of the second region with the second bonding material,
- depressions are formed on a surface of the substrate, and
- the spacer has a thickness greater than a depth of each of the depressions.
72 more elements
A semiconductor light-emitting apparatus, comprising:
- a substrate;
- a submount above the substrate;
- and
- a semiconductor light-emitting device above the submount,
- wherein the semiconductor light-emitting device and the submount are bonded to each other with a first bonding material,
- the substrate and the submount are bonded to each other with a second bonding material, the submount has a portion facing the substrate,
- the submount includes a submount main body,
- the submount main body is provided with a spacer made of metal or a metal alloy,
- the second bonding material has a thickness less than or equal to 10 μm,
- [
- Math
- .
- 1
- ]
-
- Δ
-
- T
- ·
- (
- α
- stem
- -
- α
- sub
- )
- ·
- Z
- ·
- (
- W
- 2
- ·
- L
- 2
- d
- )
- ≤
- C
-
- and
- (
- Expression
-
- 1
- )
- [
- Math
- .
- 2
- ]
-
- C
- =
- 3
- ×
- 10
- -
- 3
- (
- Expression
-
- 2
- )
- are satisfied, where
- d (m) is an average thickness of the second bonding material,
- ΔT (K) is a temperature change range ensured in the semiconductor light-emitting apparatus,
- αsub (K−1) is a thermal expansion coefficient of the submount main body,
- αstem (K−1) is a thermal expansion coefficient of the substrate,
- Z (GPa) is a modulus of elasticity of the second bonding material,
- W (m) is a width of the submount main body,
- L (m) is a length of the submount main body, and
- C (GN/m) is a crack-occurrence critical constant of the second bonding material,
- the submount has a portion facing the substrate, the portion having a first region on which a spacer is disposed and a second region without the spacer,
- the submount is bonded to the substrate by covering at least a portion of the second region with the second bonding material,
- the spacer has a first surface, a second surface, and a third surface, the first surface facing a surface of the submount main body near the substrate, the second surface being opposite to the first surface, and the third surface being a side between the first surface and the second surface, and
- a metal film is disposed on the second surface.
74 more elements
Dependencies are inferred from the claim text.