Copper, indium, gallium, selenium (CIGS) films with improved quantum efficiency
AssigneeApplied Materials, Inc.
InventorsPhilip Hsin-hua Li, Seshadri Ramaswami
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Abstract
A method includes forming, on a substrate by performing physical vapor deposition in vacuum, an absorber layer including copper (Cu), indium (In), gallium (Ga) and selenium (Se), forming a stack including the substrate and an oxygen-annealed absorber layer by performing in-situ oxygen annealing of the absorber layer to improve quantum efficiency of the image sensor by passivating selenium vacancies due to dangling bonds, and forming a cap layer over the oxygen-annealed absorber layer by performing physical vapor deposition in vacuum. The cap layer includes at least one of: Ga2O3·Sn, ZnS, CdS, CdSe, ZnO, ZnSe, ZnIn2Se4, CuGaS2, In2S3, MgO, or Zn0.8Mg0.2O.
Claims13
A method comprising:
- forming, on a substrate of an image sensor by performing physical vapor deposition in vacuum, an absorber layer comprising copper (Cu), indium (In), gallium (Ga) and selenium (Se);
- forming a stack comprising the substrate and an oxygen-annealed absorber layer by performing in-situ oxygen annealing of the absorber layer to passivate selenium vacancies due to dangling bonds;
- forming a cap layer over the oxygen-annealed absorber layer by performing physical vapor deposition in vacuum, wherein the cap layer comprises at least one of:
- Ga2O3·Sn, ZnS, CdS, CdSe, ZnO, ZnSe, ZnIn2Se4, CuGaS2, In2S3, MgO, or Zn0.8Mg0.2O;
- and
- forming, over the cap layer, a hole blocker layer comprising Ga2O3.
Dependencies are inferred from the claim text.