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US 12,211,886 B1Granted
Inductors with airgap electrical isolation
AssigneeGlobalFoundries U.S. Inc.
InventorsPrateek Kumar Sharma, Venkata Narayana Rao Vanukuru, Kevin K. Dezfulian, Kenneth J. Giewont
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Abstract
Structures including an inductor and methods of forming such structures. The structure comprises a semiconductor substrate including a first plurality of sealed cavities and a back-end-of-line stack on the semiconductor substrate. Each sealed cavity includes an air gap, and the back-end-of-line stack includes an inductor having a winding that overlaps with the scaled cavities.
Claims20
A structure comprising:
- a semiconductor substrate including a first plurality of sealed cavities, each of the first plurality of sealed cavities including a first air gap;
- and
- a back-end-of-line stack on the semiconductor substrate, the back-end-of-line stack including an inductor, the inductor having a terminal and a first winding terminating at the terminal, the first winding overlapping with the first plurality of sealed cavities, and the first plurality of sealed cavities having a first width dimension that decreases with increasing distance from the terminal.
A method of forming a device structure, the method comprising:
- forming a plurality of sealed cavities in a semiconductor substrate;
- and
- forming a back-end-of-line stack on the semiconductor substrate,
- wherein each of the plurality of sealed cavities including an air gap, and the back-end-of-line stack includes an inductor, the inductor has a terminal and a winding terminates at the terminal, the winding overlaps with the plurality of sealed cavities, and the plurality of sealed cavities have a width dimension that decreases with increasing distance from the terminal.
1 more element
Dependencies are inferred from the claim text.