Semiconductor device including standard cells
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTa-Pen Guo, Lee-Chung Lu, Li-Chun Tien
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Abstract
A semiconductor device includes a plurality of standard cells. The plurality of standard cells include a first group of standard cells arranged in a first row extending in a row direction and a second group of standard cells arranged in a second row extending in the row direction. The first group of standard cells and the second group of standard cells are arranged in a column direction. A cell height of the first group of standard cells in the column direction is different from a cell height of the second group of standard cells in the column direction.
Claims20
A semiconductor device including a plurality of standard cells, wherein:
- the plurality of standard cells include:
- a first group of standard cells arranged in a first row extending in a first direction,
- wherein the first group of standard cells have a first cell height N in a second direction perpendicular to the first direction;
- and
- a second group of standard cells arranged in a second row extending in the first direction,
- wherein the second group of standard cells have a second cell height M in the second direction,
- N and M are different, and
- a ratio of N:M ranges from 0.33 to 1.67;
- and
- a third standard cell arranged along the second direction having a height in the second direction equal to N+M.
A semiconductor device, comprising:
- a plurality of first standard cells arranged along a first row in a first direction, wherein the plurality of first standard cells have a first height N along a second direction perpendicular to the first direction;
- a plurality of second standard cells arranged along a second row in the first direction, wherein the plurality of second standard cells have a second height M along the second direction,
- wherein a plurality of first rows of the plurality of first standard cells and a plurality of second rows of the plurality of second standard cells are alternately arranged along the second direction,
- each of the first standard cells and the second standard cells include a first conductivity type region and a second conductivity type region arranged along the second direction,
- a first conductivity type region in a row of the plurality of first standard cells is next to a first conductivity type region of an adjacent row of the plurality of second standard cells,
- a second conductivity type region in the row of the plurality of first standard cells is next to a second conductivity type region of another adjacent row of the plurality of second standard cells, and
- N and M are different heights.
A semiconductor device, comprising:
- a first plurality of standard cells arranged along a first row extending in a first direction,
- wherein the first plurality of standard cells have a first height N along a second direction perpendicular to the first direction;
- a second plurality of standard cells arranged along a second row extending in the first direction,
- wherein the second plurality of standard cells have a second height M along the second direction;
- a third plurality of standard cells arranged along a third row extending in the first direction,
- wherein the third plurality of standard cells have a third height P along the second direction,
- wherein the first row, second row, and third row are arranged along a second direction perpendicular to the first direction, and
- N, M, and P are different;
- and
- a fourth standard cell disposed over the first row, second row, and third row,
- wherein the fourth standard cell has a height in the second direction equal to N+M+P.
Dependencies are inferred from the claim text.