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US 12,211,813 B2Granted
Semiconductor structure and manufacturing method thereof
AssigneeChangxin Memory Technologies, Inc.
InventorLing-Yi Chuang
Life of this patent
Estimating the term…
Abstract
The present disclosure relates to the technical field of semiconductors, and provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a first chip and a second chip, where a first conductive connection wire of the first chip is connected to a first conductive contact pad, a second conductive connection wire of the second chip is connected to a second conductive contact pad, the first conductive contact pad includes a first conductor group and a first connection group, and the second conductive contact pad includes a second conductor group and a second connection group.
Claims19
A semiconductor structure, comprising:
- a first chip, wherein the first chip comprises a first substrate, a first conductive connection wire, and a first conductive contact pad, the first conductive contact pad is connected to the first conductive connection wire, the first conductive contact pad comprises a first conductor group and a first connection group, and a melting point of the first conductor group is higher than a melting point of the first connection group;
- and
- a second chip, wherein the second chip comprises a second substrate, a second conductive connection wire, and a second conductive contact pad, the second conductive contact pad is connected to the second conductive connection wire, the second conductive contact pad comprises a second conductor group and a second connection group, a melting point of the second conductor group is higher than a melting point of the second connection group, the first conductor group is directly opposite to the second conductor group, and the first connection group is directly opposite to the second connection group, such that a bonding structure is formed between the first conductive contact pad and the second conductive contact pad;
- wherein an end of the first conductive contact pad facing toward the second conductive contact pad is a first contact surface, an end of the second conductive contact pad facing toward the first contact surface is a second contact surface, an area occupied by the first conductor group on the first contact surface is larger than an area occupied by the first connection group on the first contact surface, and an area occupied by the second conductor group on the second contact surface is larger than an area occupied by the second connection group on the second contact surface;
- wherein both the first conductive connection wire and the first conductive contact pad are located in the first substrate.
2 more elements
A method of manufacturing a semiconductor structure, comprising:
- providing a first chip, wherein the first chip comprises a first substrate, a first conductive connection wire, and a first conductive contact pad, the first conductive contact pad is connected to the first conductive connection wire, the first conductive contact pad comprises a first conductor group and a first connection group, and a melting point of the first conductor group is higher than a melting point of the first connection group;
- providing a second chip, wherein the second chip comprises a second substrate, a second conductive connection wire, and a second conductive contact pad, the second conductive contact pad is connected to the second conductive connection wire, the second conductive contact pad comprises a second conductor group and a second connection group, and a melting point of the second conductor group is higher than a melting point of the second connection group;
- aligning the first chip with the second chip, such that the first conductor group is directly opposite to the second conductor group, and the first connection group is directly opposite to the second connection group;
- and
- connecting the first chip and the second chip;
- wherein an end of the first conductive contact pad facing toward the second conductive contact pad is a first contact surface, an end of the second conductive contact pad facing toward the first contact surface is a second contact surface, an area occupied by the first conductor group on the first contact surface is larger than an area occupied by the first connection group on the first contact surface, and an area occupied by the second conductor group on the second contact surface is larger than an area occupied by the second connection group on the second contact surface;
- wherein, both the second conductive connection wire and the second conductive contact pad are located in the second substrate.
4 more elements
Dependencies are inferred from the claim text.