Ternary content addressable memory and decision generation method for the same

A ternary content addressable memory (TCAM), comprising:

• a plurality of first search lines;
• a plurality of second search lines;
• a plurality of memory cell strings, each of the memory cell strings comprising a plurality of memory cells, each of the memory cells coupled to one of the first search lines and one of the second search lines;
• and
• one or more current sensing units, coupled to the memory cell strings,
• wherein in a search operation, a determination that whether any of the data stored in the memory cell strings matches a data string to be searched is made according to whether the one or more current sensing units detect current from the memory cell strings, or according to the magnitude of the current flowing out from the memory cell strings detected by the one or more current sensing units;
• wherein each of the memory cells comprises a first transistor, a second transistor and an inverter,
• wherein a first terminal of the first transistor is coupled to the corresponding first search line, and a first terminal of the second transistor is coupled to the corresponding second search line, and the first search line is coupled to the second search line by the inverter,
• wherein the first terminal of the first transistor is a gate of the first transistor, and the first terminal of the second transistor is a gate of the second transistor.