Reader noise reduction using spin hall effects
AssigneeHeadway Technologies, Inc.
InventorsWenyu Chen, Yan Wu
Life of this patent
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Abstract
A read head is disclosed wherein a Spin Hall Effect (SHE) layer is formed on a free layer (FL) in a sensor and between the FL and top shield (S2). Preferably, the sensor has a seed layer, an AP2 reference layer, antiferromagnetic coupling layer, AP1 reference layer, and a tunnel barrier sequentially formed on a bottom shield (S1). When the stripe heights of the FL and SHE layer are equal, a two terminal configuration is employed where a current flows between one side of the SHE layer to a center portion thereof and then to S1, or vice versa. As a result, a second spin torque is generated by the SHE layer on the FL that opposes a first spin torque from the AP1 reference layer on the FL.
Claims11
A read head, comprising:
- (a) a bottom shield (S1) having a front side at an air bearing surface (ABS), and a top surface;
- (b) a top shield (S2) having a front side at the ABS, and a bottom surface;
- (c) a magnetoresistive (MR) sensor formed on S1 at the ABS, comprising:
- (1) a free layer (FL) with a magnetization in a first cross-track (longitudinal) direction, a front side at the ABS, and a backside at a first stripe height (SH1) from the ABS;
- (2) an AP1 reference layer with a magnetization that is orthogonal to the ABS in a first transverse direction, and wherein the AP1 reference layer Is antiferromagnetically (AF) coupled to an AP2 reference layer through an AF coupling layer, and produces a first spin torque on the FL when a current (j) having a first current density flows through the MR sensor in a down-track direction;
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- (3) a non-magnetic layer between the FL and AP1 reference layer;
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- (d) a Spin Hall Effect (SHE) layer comprised of a negative Spin Hall Angle (SHA) material that is formed on the FL and with a second stripe height (SH2) between a front side and backside thereof, and wherein a top surface of the SHE layer is separated from the S2 bottom surface by an insulation layer, and wherein the SHE layer is configured to spin polarize the current (j) that has a second current density in the SHE layer and generate a second spin torque on the FL that opposes the first spin torque when the current (j) flows between a first side of the SHE layer and a center portion thereof in a direction opposite to the first cross-track direction and then with the first current density through the MR sensor to S1, or the current (j) having the first current density flows from S1 through the MR sensor, and to the center portion of the SHE layer wherein the current (j) has the second current density, and then to the first side of the SHE layer in the first cross-track direction, and thereby reduces spin torque induced magnetic noise in the FL.
Dependencies are inferred from the claim text.