Photoresist removal method and photoresist removal system

A photoresist removal method, comprising:

• acquiring a target wafer, a photoresist being provided on a surface of the target wafer, a surface of a photoresist layer of the photoresist being plated with a metal overhead layer, the metal overhead layer comprising an air bridge structure;
• immersing the target wafer in a first container of first organic solvent for a first predefined duration, wherein the first container is placed in a water bath that has a first predefined temperature, the first predefined temperature and the first predefined duration are determined according to the first organic solvent;
• rinsing the target wafer with the first organic solvent in response to an end of the first predefined duration;
• placing the target wafer in a second container containing the first organic solvent at a second predefined temperature lower than the first predefined temperature, the target wafer having a target inclination angle against an interior side wall of the second container;
• suspending the second container containing the first organic solvent at the second predefined temperature on an ultrasonic cleaning water surface, wherein only a bottom surface of the second container contacts the ultrasonic cleaning water surface;
• performing ultrasonic cleaning on the target wafer placed in the second container that is suspended in the ultrasonic cleaning water surface for a second predefined duration based on a target ultrasonic power, the second predefined duration shorter than the first predefined duration;
• removing residual first organic solvent on the surface of the target wafer in response to an end of the second predefined duration;
• and
• drying the target wafer to obtain the target wafer having the air bridge structure with the photoresist removed from top and bottom of the air bridge structure via simultaneous gas purging and centrifugal drying.