US 12,209,105 B2 · Vapor deposition precursor compounds and process of use

Abstract

Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O2 and NH3 co-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to deposit the etch-resistant thin-films of SiOCN. The films display excellent resistance to wet etching with dilute aqueous HF solutions, both after deposition and after post-deposition plasma treatment(s). Accordingly, these films are expected to display excellent stability towards post-deposition fabrication steps utilized during device manufacturing and build.

Claims12

Dependent claims

A process for the vapor deposition of a silicon oxycarbonitride film onto a microelectronic device surface in a reaction zone, which comprises sequentially introducing into said reaction zone reactants chosen from (i) at least one silylamine, (ii) at least one oxiranyl silane, wherein (i) and (ii) are introduced in either order, and (iii) a reducing gas in plasma form, with purging of each reactant prior to exposing the film to the next reactant,

wherein the silylamine has two silicon atoms per molecule and the oxiranyl silane selected from:
compounds of the formula:
wherein each R is independently chosen from C1-C4 alkyl, and x is zero or 1;
compounds of the formula
wherein each R1 is independently chosen from a C1-C4 alkyl group or a group of the formula
wherein each R3 is independently chosen from hydrogen or C1-C4 alkyl;
and
wherein each R2 is independently chosen from hydrogen or C1-C4 alkyl.

5 more elements

Dependencies are inferred from the claim text.

Vapor deposition precursor compounds and process of use

Life of this patent

Vapor deposition precursor compounds and process of use

Life of this patent

Abstract

Claims12