US 12,209,046 B2Granted

Glass substrate for EUVL, manufacturing method thereof, mask blank for EUVL, and manufacturing method thereof

AssigneeAGC Inc.

InventorsTakuma Nara, Masahiko Tamura, Satoshi Yamana

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Abstract

A glass substrate for EUVL includes a first main surface having a rectangular shape; a second main surface having a rectangular shape on an opposite side to the first main surface; four end surfaces orthogonal to the first and second main surfaces; four first chamfered surfaces formed on boundaries between the first main surface and the end surfaces; and four second chamfered surfaces formed on boundaries between the second main surface and the end surfaces. The glass substrate for EUVL is formed of quartz glass containing TiO2. The end surfaces include fluorine (F) and an element (A) other than fluorine that forms a gas cluster with fluorine, and satisfy relations: S ⁢ 1 = ∫ 0 x = 50 [ nm ] { D ⁢ 1 ⁢ ( x ) - ( a ⁢ 1 ⁢ x + b ⁢ 1 ) } ⁢ dx > 0.2 ( 1 ) S ⁢ 2 = ∫ 0 x = 50 [ nm ] { D ⁢ 2 ⁢ ( x ) - ( a ⁢ 2 ⁢ x + b ⁢ 2 ) } ⁢ dx > 0.03 ( 2 )

Claims20

Dependent claims

A glass substrate for Extreme Ultra-Violet Lithography (EUVL) comprising:

a first main surface having a rectangular shape;
a second main surface having a rectangular shape and being on an opposite side to the first main surface;
four end surfaces being orthogonal to the first main surface and the second main surface;
four first chamfered surfaces formed on boundaries between the first main surface and the four end surfaces respectively;
and
four second chamfered surfaces formed on boundaries between the second main surface and the four end surfaces respectively,
wherein the glass substrate for EUVL is formed of quartz glass containing titanium dioxide (TiO2), and
wherein the end surfaces include fluorine (F) and an element (A) other than fluorine that forms a gas cluster with fluorine, and satisfy relations (1) and (2):
[
Math
⁢
1
]

1
=
∫
0
x
=
50
[
nm
]
{
D
⁢
1
⁢
(
x
)
-
(
a
⁢
1
⁢
x
+
b
⁢
1
)
}
⁢
dx
>
0.2
(
1
)
[
Math
⁢
2
]

S
⁢
2
=
∫
0
x
=
50
[
nm
]
{
D
⁢
2
⁢
(
x
)
-
(
a
⁢
2
⁢
x
+
b
⁢
2
)
}
⁢
dx
>
0.03
(
2
)
where D1(x) in the relation (1) represents an intensity of fluorine (F) normalized with an intensity of silicon (Si) measured by Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS), x represents a depth from the end surface (in units of nm), a1x+b1 represents a linear expression in terms of x obtained by approximating D1(x) using a least squares method for x which is greater than or equal to 200 and less than or equal to 400, D2(x) in the relation (2) represents an intensity of the element (A) normalized with an intensity of silicon (Si) measured by the TOF-SIMS, x represents a depth from the end surface (in units of nm), and a2x+b2 represents a linear expression in terms of x obtained by approximating D2(x) using the least squares method for x which is greater than or equal to 200 and less than or equal to 400.

96 more elements

A glass substrate for Extreme Ultra-Violet Lithography (EUVL) comprising:

a first main surface having a rectangular shape;
a second main surface having a rectangular shape and being on an opposite side to the first main surface;
four end surfaces being orthogonal to the first main surface and the second main surface;
four first chamfered surfaces formed on boundaries between the first main surface and the four end surfaces respectively;
four second chamfered surfaces formed on boundaries between the second main surface and the four end surfaces respectively;
and
one or more notch surfaces formed as inclined toward the first main surface so as to cut off a corner of the two adjacent end surfaces and the first main surface,
wherein the glass substrate for EUVL is formed of quartz glass containing titanium dioxide (TiO2), and
wherein the notch surface includes fluorine (F) and an element (A) other than fluorine that forms a gas cluster with fluorine, and satisfies relations (3) and (4):
[
Math
⁢
3
]

S
⁢
3
=
∫
0
x
=
50
[
nm
]
{
D
⁢
3
⁢
(
x
)
-
(
a
⁢
3
⁢
x
+
b
⁢
3
)
}
⁢
dx
>
0.2
(
3
)
[
Math
⁢
4
]

S
⁢
4
=
∫
0
x
=
50
[
nm
]
{
D
⁢
4
⁢
(
x
)
-
(
a
⁢
4
⁢
x
+
b
⁢
4
)
}
⁢
dx
>
0.3
(
4
)
where D3(x) in the relation (3) represents an intensity of fluorine (F) normalized with an intensity of silicon (Si) measured by Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS), x represents a depth from the notch surface (in units of nm), a3x+b3 represents a linear expression in terms of x obtained by approximating D3(x) using a least squares method for x which is greater than or equal to 200 and less than or equal to 400, D4(x) in the relation (4) represents an intensity of the element (A) normalized with an intensity of silicon (Si) measured by the TOF-SIMS, x represents a depth from the notch surface (in units of nm), and a4x+b4 represents a linear expression in terms of x obtained by approximating D4(x) using the least squares method for x which is greater than or equal to 200 and less than or equal to 400.

99 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/245,585Filed 30 Apr 2021
Priority: JP 2020-08472913 May 2020
Published: US 2021/0355024 A118 Nov 2021
Granted: 28 Jan 2025
Term ends: Not estimatedThe source records don’t support an estimate.

Classification13 codes

C03C 15/00
Surface treatment of glass, not in the form of fibres or filaments
C03C 3/06
Containing silica: with more than 90% silica by weight, e.g. quartz
C03C 21/007
Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface: in gaseous phase
G03F 1/22
Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles…