MEMS device built using the BEOL metal layers of a solid state semiconductor process

An integrated circuit chip comprising:

• a first region filled with metal filling structures implementing a substantially constant metal density;
• a second region not filled with the metal filling structures including:
• a MEMS device formed using the materials of the BEOL of a CMOS process, wherein
• a post-processing of vHF and post backing was applied to form the MEMS device after the first region is filled with the metal filling structures;
• and
• wherein the MEMS device includes a pad, pad including a top metal layer arranged to extend laterally beyond a vertically aligned passivation opening in all directions preventing etching of dielectric material beyond the top metal layer during the post-processing of vHF.