Back to results
US 12,208,595 B2Granted
AlN joined body
AssigneeNGK Insulators, Ltd.
InventorsKeita Yamana, Kazuhiro Nobori, Genichi Yokota, Tetsuhisa Abe
Life of this patent
Estimating the term…
Abstract
An AlN joined body includes a first AlN member and a second AlN member that are joined together. The content of yttria in the first AlN member is equal to or below the detection limit. The second AlN member contains yttria.
Claims18
An AlN joined body comprising
- a first AlN member and a second AlN member that are joined together,
- wherein a content of yttria in the first AlN member is equal to or below 5 mass ppm,
- wherein the first AlN member contains magnesia and titania as oxides,
- wherein a total amount of the oxides added in the first AlN member is 0.1 to 3% by mass, and
- wherein the second AlN member contains yttria.
2 more elements
An AlN joined body comprising
- a first AlN member and a second AlN member that are joined together,
- wherein the first AlN member has a first diffusion layer formed as a result of the joining,
- wherein the second AlN member has a second diffusion layer formed as a result of the joining,
- wherein the first AlN member contains magnesia and titania as oxides,
- wherein a total amount of the oxides added in the first AlN member is 0.1 to 3% by mass,
- wherein a content of yttria in a portion of the first AlN member other than the first diffusion layer is equal to or below 5 mass ppm, and
- wherein a portion of the second AlN member other than the second diffusion layer contains yttria.
4 more elements
Dependencies are inferred from the claim text.