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US 12,205,997 B2Granted
Integrated circuit including backside conductive vias
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorChung-Liang Cheng
Life of this patent
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Abstract
An integrated circuit includes a first chip bonded to a second chip. The first chip includes gate all around transistors on a substrate. The first chip includes backside conductive vias extending through the substrate to the gate all around transistors. The second chip includes electronic circuitry electrically connected to the transistors by the backside conductive vias.
Claims20
An integrated circuit, comprising:
- a first chip including:
- a substrate including:
- a first semiconductor layer;
- an etch-stop layer on the first semiconductor layer;
- and
- a second semiconductor layer on the etch-stop layer
- a first gate all around transistor on the substrate and having a source region;
- and
- a backside conductive via extending through the substrate to the source region, wherein the conductive via extends through the first semiconductor layer, the etch-stop layer, and the second semiconductor layer.
6 more elements
An integrated circuit, comprising:
- a first chip including:
- a substrate including:
- a first semiconductor layer;
- an etch-stop layer on the first semiconductor layer;
- and
- a second semiconductor layer on the etch-stop layer;
- a first gate all around transistor on the substrate and including a source/drain region;
- a backside conductive via extending through the substrate to the source/drain region of the first gate all around transistor.
5 more elements
A device, comprising:
- a first chip including:
- a semiconductor substrate including a first semiconductor layer, a second semiconductor layer, and an etch-stop layer between the first semiconductor layer and the second semiconductor layer;
- a first gate all around transistor on a semiconductor substrate and including a first source/drain region;
- a second gate all around transistor on the semiconductor substrate and including a second source/drain region;
- and
- a backside conductive via extending through the semiconductor substrate and electrically contacting the first source/drain region and the second source/drain region of the first gate all around transistor.
3 more elements
Dependencies are inferred from the claim text.