Semiconductor device and method for producing the same

A method for producing a semiconductor device comprising:

• forming a shape stabilization layer on a contact layer;
• etching the shape stabilization layer to form an inclined surface and to expose a part of an upper surface of the contact layer;
• forming an insulating film on the shape stabilization layer;
• forming an opening in the insulating film;
• forming an underlying metal covering an upper surface of the contact layer exposed through the opening and the inclined surface;
• and
• forming a plating on the underlying metal by electrolytic plating,
• wherein the inclined surface is formed in a peripheral portion of the opening,
• a material of the shape stabilization layer is different from a material of the contact layer,
• the shape stabilization layer is selectively etched with respect to the contact layer when forming the inclined surface, and
• the material of the shape stabilization layer is a semiconductor, and
• the shape stabilization layer is wet etched to form the inclined surface.