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US 12,198,915 B2Granted
Reflection mode dynode
AssigneeAdaptas Solutions Pty Ltd
InventorsToby Shanley, Wayne Sheils
Life of this patent
Estimating the term…
Abstract
A device configured to convert or amplify a particle, the conversion or amplification being reliant on the impact of a particle on a surface of the device causing emission of one or more secondary electrons from the same surface. The device includes a carbon-based layer capable of secondary electron emission upon impact of a particle. The surface may be used to convert, for example, an ion into an electron signal, or an electron signal into an amplified electron signal, such as in conversion or amplification dynodes.
Claims13
An ion detector comprising:
- a space to admit a particle for detection, and
- a device configured to convert or amplify an admitted particle in reflection mode, the conversion or amplification being reliant on an impact of the admitted particle on a surface of the device causing emission of one or more secondary electrons from the same surface, wherein the device comprises a polycrystalline carbon-based layer capable of secondary electron emission upon impact of a particle, wherein the polycrystalline carbon-based layer comprises a dopant and is hydrogen terminated on its surface, and wherein the device provides a secondary electron yield of at least 5 electrons for incident energies of at least about 200 eV with secondary electron yield increasing over incident energies between about 200 eV and about 600 eV.
A mass spectrometer comprising:
- a mass analyzer;
- and
- an ion detector comprising:
- a space to admit a particle for detection, and
- a device configured to convert or amplify an admitted particle in reflection mode, the conversion or amplification being reliant on an impact of the admitted particle on a surface of the device causing emission of one or more secondary electrons from the same surface, wherein the device comprises a polycrystalline carbon-based layer capable of secondary electron emission upon impact of a particle, wherein the polycrystalline carbon-based layer comprises a dopant and is hydrogen terminated on its surface, and wherein the device provide a secondary electron yield of at least 5 electrons for incident energies of at least about 200 eV with secondary electron yield increasing for incident energies between about 200 eV and about 600 eV.
2 more elements
A method comprising:
- providing a device configured to convert or amplify an admitted particle in reflection mode, the conversion or amplification being reliant on an impact of the admitted particle on a surface of the device causing emission of one or more secondary electrons from the same surface, wherein the device comprises a polycrystalline carbon-based layer capable of secondary electron emission upon impact of a particle, wherein the polycrystalline carbon-based layer comprises a dopant and is hydrogen terminated on its surface, and
- operating the device at an incident energy of at least about 200 eV to provide a secondary electron yield of at least about 5 electrons.
Dependencies are inferred from the claim text.